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AUIRF7648M2TR AUIRF7648M2TR INFINEON TECHNOLOGIES auirf7648m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRF7665S2TR AUIRF7665S2TR INFINEON TECHNOLOGIES auirf7665s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRF7669L2TR AUIRF7669L2TR INFINEON TECHNOLOGIES auirf7669l2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Power dissipation: 100W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRF7675M2TR AUIRF7675M2TR INFINEON TECHNOLOGIES auirf7675m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 45W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRF7736M2TR AUIRF7736M2TR INFINEON TECHNOLOGIES auirf7736m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Kind of package: reel
Drain-source voltage: 40V
Drain current: 108A
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRF7737L2TR AUIRF7737L2TR INFINEON TECHNOLOGIES auirf7737l2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Power dissipation: 83W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRF7739L2TR AUIRF7739L2TR INFINEON TECHNOLOGIES auirf7739l2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRFB8405 AUIRFB8405 INFINEON TECHNOLOGIES AUIRFB8405.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.09 EUR
14+ 5.38 EUR
15+ 4.83 EUR
16+ 4.56 EUR
Mindestbestellmenge: 12
AUIRFB8407 AUIRFB8407 INFINEON TECHNOLOGIES AUIRFB8407.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFB8409 AUIRFB8409 INFINEON TECHNOLOGIES AUIRFB8409.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFN7107TR AUIRFN7107TR INFINEON TECHNOLOGIES auirfn7107.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Mounting: SMD
Drain-source voltage: 75V
Drain current: 53A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel
Gate charge: 51nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PQFN5X6
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRFN8459TR AUIRFN8459TR INFINEON TECHNOLOGIES AUIRFN8459.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRFR024N AUIRFR024N INFINEON TECHNOLOGIES auirfr024n.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFR3504Z AUIRFR3504Z INFINEON TECHNOLOGIES auirfr3504.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Anzahl je Verpackung: 150 Stücke
Produkt ist nicht verfügbar
AUIRFR4105ZTRL AUIRFR4105ZTRL INFINEON TECHNOLOGIES auirfr4105.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AUIRFR5305 AUIRFR5305 INFINEON TECHNOLOGIES auirfr5305.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.75 EUR
5+ 14.3 EUR
8+ 8.94 EUR
20+ 3.58 EUR
Mindestbestellmenge: 2
AUIRFR5305TR AUIRFR5305TR INFINEON TECHNOLOGIES auirfr5305.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
AUIRFR5305TRL INFINEON TECHNOLOGIES auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Pulsed drain current: -110A
Power dissipation: 110W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AUIRFR6215 AUIRFR6215 INFINEON TECHNOLOGIES auirfr6215.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 66nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFR8405TRL INFINEON TECHNOLOGIES auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5 INFN-S-A0008053586-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AUIRFR9024NTRL INFINEON TECHNOLOGIES INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Pulsed drain current: -44A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AUIRFS3107-7P AUIRFS3107-7P INFINEON TECHNOLOGIES AUIRFS3107-7P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 190A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 190A
Power dissipation: 370W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFSL8403 AUIRFSL8403 INFINEON TECHNOLOGIES AUIRFSL8403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFSL8407 AUIRFSL8407 INFINEON TECHNOLOGIES AUIRFSL8407.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Anzahl je Verpackung: 50 Stücke
Produkt ist nicht verfügbar
AUIRFZ24NS AUIRFZ24NS INFINEON TECHNOLOGIES AUIRFZ24NS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 12A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 12A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFZ44VZS AUIRFZ44VZS INFINEON TECHNOLOGIES auirfz44vzs.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 57A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Power dissipation: 92W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRG4PH50S AUIRG4PH50S INFINEON TECHNOLOGIES auirg4ph50s.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Anzahl je Verpackung: 75 Stücke
Produkt ist nicht verfügbar
AUIRGP35B60PD AUIRGP35B60PD INFINEON TECHNOLOGIES AUIRGP35B60PD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRGP4062D AUIRGP4062D INFINEON TECHNOLOGIES AUIRGP4062D.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Anzahl je Verpackung: 400 Stücke
Produkt ist nicht verfügbar
AUIRGP4066D1 AUIRGP4066D1 INFINEON TECHNOLOGIES AUIRGP4066D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Technology: Trench
Mounting: THT
Case: TO247AC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 320ns
Power dissipation: 227W
Type of transistor: IGBT
Gate charge: 225nC
Collector current: 90A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Pulsed collector current: 225A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRGPS4070D0 AUIRGPS4070D0 INFINEON TECHNOLOGIES AUIRGPS4070D0.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 160A; 375W; SUPER247
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 160A
Power dissipation: 375W
Case: SUPER247
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 165ns
Turn-off time: 260ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES AUIRGx4062D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Collector current: 39A
Gate-emitter voltage: ±20V
Power dissipation: 123W
Gate charge: 77nC
Pulsed collector current: 72A
Collector-emitter voltage: 600V
Turn-on time: 35ns
Turn-off time: 176ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
50+ 4.79 EUR
Mindestbestellmenge: 9
AUIRL1404ZSTRL AUIRL1404ZSTRL INFINEON TECHNOLOGIES auirl1404s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Mounting: SMD
Drain current: 130A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Gate charge: 110nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 790A
Case: D2PAK
Drain-source voltage: 40V
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
AUIRL7732S2TR AUIRL7732S2TR INFINEON TECHNOLOGIES auirl7732s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRL7736M2TR AUIRL7736M2TR INFINEON TECHNOLOGIES auirl7736m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRL7766M2TR AUIRL7766M2TR INFINEON TECHNOLOGIES auirl7766m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 62.5W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRLR2905ZTRL INFINEON TECHNOLOGIES AUIRLR2905Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AUIRLS3034 INFINEON TECHNOLOGIES AUIRLS3034.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES BAx92-DTE.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)
335+0.21 EUR
375+ 0.19 EUR
425+ 0.17 EUR
485+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 335
BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES BAx92-DTE.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)
335+0.21 EUR
375+ 0.19 EUR
425+ 0.17 EUR
485+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 335
BA885E6327 BA885E6327 INFINEON TECHNOLOGIES BAx95-DTE.pdf Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.19...0.45pF
Semiconductor structure: single diode
Leakage current: 20nA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1508 Stücke:
Lieferzeit 7-14 Tag (e)
264+0.27 EUR
610+ 0.12 EUR
685+ 0.1 EUR
Mindestbestellmenge: 264
BA89202VH6127XTSA1 BA89202VH6127XTSA1 INFINEON TECHNOLOGIES BAx92-DTE.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Mounting: SMD
Case: SC79
Kind of package: reel; tape
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 120ns
Leakage current: 20nA
Type of diode: switching
Features of semiconductor devices: PIN; RF
Capacitance: 0.6...1.4pF
Max. off-state voltage: 35V
Max. forward voltage: 1V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5334 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
840+ 0.085 EUR
955+ 0.075 EUR
1100+ 0.065 EUR
1165+ 0.062 EUR
Mindestbestellmenge: 380
BAR6302VH6327XTSA1 BAR6302VH6327XTSA1 INFINEON TECHNOLOGIES BAR63xx_ser.pdf Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BAR6303WE6327HTSA1 BAR6303WE6327HTSA1 INFINEON TECHNOLOGIES BAR63xx_ser.pdf Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Case: SOD323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2684 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
311+ 0.23 EUR
412+ 0.17 EUR
635+ 0.11 EUR
824+ 0.087 EUR
910+ 0.079 EUR
Mindestbestellmenge: 209
BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Case: SC79
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2010 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
281+ 0.25 EUR
472+ 0.15 EUR
633+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 179
BAR6405WH6327XTSA1 BAR6405WH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.3 EUR
100+ 0.72 EUR
117+ 0.61 EUR
321+ 0.23 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 55
BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Case: SC79
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2010 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
281+ 0.25 EUR
472+ 0.15 EUR
633+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 179
BAR6403WE6327HTSA1 BAR6403WE6327HTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Max. off-state voltage: 50V
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1984 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
298+ 0.24 EUR
496+ 0.14 EUR
603+ 0.12 EUR
642+ 0.11 EUR
Mindestbestellmenge: 179
BAR6404E6327HTSA1 BAR6404E6327HTSA1 INFINEON TECHNOLOGIES BAR64-04.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: double series
Max. off-state voltage: 150V
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2150 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
257+ 0.28 EUR
334+ 0.21 EUR
496+ 0.14 EUR
782+ 0.092 EUR
834+ 0.086 EUR
1000+ 0.084 EUR
Mindestbestellmenge: 173
BAR6502VH6327XTSA1 INFINEON TECHNOLOGIES bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0 Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Type of diode: varicap
Capacitance: 0.5pF
Features of semiconductor devices: PIN; RF
Case: SC79
Mounting: SMD
Kind of package: reel; tape
Leakage current: 20nA
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BAR66E6327HTSA1 BAR66E6327HTSA1 INFINEON TECHNOLOGIES bar66series.pdf Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Type of diode: switching
Power dissipation: 0.25W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Max. forward voltage: 1.2V
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 12A
Features of semiconductor devices: PIN
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2740 Stücke:
Lieferzeit 7-14 Tag (e)
210+0.35 EUR
320+ 0.23 EUR
415+ 0.17 EUR
440+ 0.16 EUR
Mindestbestellmenge: 210
BAR81WH6327XTSA1 BAR81WH6327XTSA1 INFINEON TECHNOLOGIES BAR81.pdf Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Kind of package: reel; tape
Power dissipation: 0.1W
Features of semiconductor devices: RF
Type of diode: switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 960 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.64 EUR
112+ 0.64 EUR
126+ 0.57 EUR
145+ 0.49 EUR
153+ 0.47 EUR
Mindestbestellmenge: 44
BAS116E6327HTSA1 BAS116E6327HTSA1 INFINEON TECHNOLOGIES BAS116E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 0.25A
Max. forward voltage: 1.25V
Power dissipation: 0.37W
Reverse recovery time: 0.6µs
Type of diode: switching
Features of semiconductor devices: fast switching
Max. off-state voltage: 85V
Max. forward impulse current: 4.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2474 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
421+ 0.17 EUR
537+ 0.13 EUR
767+ 0.093 EUR
1374+ 0.052 EUR
1454+ 0.049 EUR
24000+ 0.047 EUR
Mindestbestellmenge: 278
BAS116E6433HTMA1 BAS116E6433HTMA1 INFINEON TECHNOLOGIES BAS116E6433.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
BAS12504WH6327XTSA1 BAS12504WH6327XTSA1 INFINEON TECHNOLOGIES BAS125-0xW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT323; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
90+0.8 EUR
104+ 0.69 EUR
223+ 0.32 EUR
235+ 0.3 EUR
6000+ 0.29 EUR
Mindestbestellmenge: 90
BAS12507WH6327XTSA1 BAS12507WH6327XTSA1 INFINEON TECHNOLOGIES BAS125-0xW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT343; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Case: SOT343
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BAS140WE6327HTSA1 BAS140WE6327HTSA1 INFINEON TECHNOLOGIES BAS140WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOD323; 250mW
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOD323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12210 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
417+ 0.17 EUR
592+ 0.12 EUR
1137+ 0.063 EUR
1202+ 0.059 EUR
Mindestbestellmenge: 186
BAS1602VH6327XTSA1 BAS1602VH6327XTSA1 INFINEON TECHNOLOGIES BAS1602VH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3792 Stücke:
Lieferzeit 7-14 Tag (e)
556+0.13 EUR
676+ 0.11 EUR
754+ 0.095 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1250+ 0.057 EUR
1323+ 0.054 EUR
Mindestbestellmenge: 556
BAS1603WE6327HTSA1 BAS1603WE6327HTSA1 INFINEON TECHNOLOGIES BAS1603WE6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3374 Stücke:
Lieferzeit 7-14 Tag (e)
410+0.17 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1205+ 0.059 EUR
1275+ 0.056 EUR
Mindestbestellmenge: 410
BAS16E6327HTSA1 BAS16E6327HTSA1 INFINEON TECHNOLOGIES BAS1603WE6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17027 Stücke:
Lieferzeit 7-14 Tag (e)
777+0.092 EUR
893+ 0.08 EUR
1087+ 0.066 EUR
1211+ 0.059 EUR
1306+ 0.055 EUR
1489+ 0.048 EUR
1578+ 0.045 EUR
Mindestbestellmenge: 777
AUIRF7648M2TR auirf7648m2.pdf
AUIRF7648M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRF7665S2TR auirf7665s2.pdf
AUIRF7665S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRF7669L2TR auirf7669l2.pdf
AUIRF7669L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Power dissipation: 100W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRF7675M2TR auirf7675m2.pdf
AUIRF7675M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 45W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRF7736M2TR auirf7736m2.pdf
AUIRF7736M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Kind of package: reel
Drain-source voltage: 40V
Drain current: 108A
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRF7737L2TR auirf7737l2.pdf
AUIRF7737L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Power dissipation: 83W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRF7739L2TR auirf7739l2.pdf
AUIRF7739L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRFB8405 AUIRFB8405.pdf
AUIRFB8405
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+6.09 EUR
14+ 5.38 EUR
15+ 4.83 EUR
16+ 4.56 EUR
Mindestbestellmenge: 12
AUIRFB8407 AUIRFB8407.pdf
AUIRFB8407
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFB8409 AUIRFB8409.pdf
AUIRFB8409
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFN7107TR auirfn7107.pdf
AUIRFN7107TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Mounting: SMD
Drain-source voltage: 75V
Drain current: 53A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel
Gate charge: 51nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PQFN5X6
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRFN8459TR AUIRFN8459.pdf
AUIRFN8459TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRFR024N auirfr024n.pdf
AUIRFR024N
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFR3504Z auirfr3504.pdf
AUIRFR3504Z
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Anzahl je Verpackung: 150 Stücke
Produkt ist nicht verfügbar
AUIRFR4105ZTRL auirfr4105.pdf
AUIRFR4105ZTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AUIRFR5305 auirfr5305.pdf
AUIRFR5305
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+35.75 EUR
5+ 14.3 EUR
8+ 8.94 EUR
20+ 3.58 EUR
Mindestbestellmenge: 2
AUIRFR5305TR auirfr5305.pdf
AUIRFR5305TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
AUIRFR5305TRL auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Pulsed drain current: -110A
Power dissipation: 110W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AUIRFR6215 auirfr6215.pdf
AUIRFR6215
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 66nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFR8405TRL auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5 INFN-S-A0008053586-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Pulsed drain current: -44A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AUIRFS3107-7P AUIRFS3107-7P.pdf
AUIRFS3107-7P
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 190A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 190A
Power dissipation: 370W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFSL8403 AUIRFSL8403.pdf
AUIRFSL8403
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFSL8407 AUIRFSL8407.pdf
AUIRFSL8407
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhanced
Anzahl je Verpackung: 50 Stücke
Produkt ist nicht verfügbar
AUIRFZ24NS AUIRFZ24NS.pdf
AUIRFZ24NS
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 12A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 12A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRFZ44VZS auirfz44vzs.pdf
AUIRFZ44VZS
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 57A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Power dissipation: 92W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRG4PH50S auirg4ph50s.pdf
AUIRG4PH50S
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Anzahl je Verpackung: 75 Stücke
Produkt ist nicht verfügbar
AUIRGP35B60PD AUIRGP35B60PD.pdf
AUIRGP35B60PD
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRGP4062D AUIRGP4062D.pdf
AUIRGP4062D
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Anzahl je Verpackung: 400 Stücke
Produkt ist nicht verfügbar
AUIRGP4066D1 AUIRGP4066D1.pdf
AUIRGP4066D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Technology: Trench
Mounting: THT
Case: TO247AC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 320ns
Power dissipation: 227W
Type of transistor: IGBT
Gate charge: 225nC
Collector current: 90A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Pulsed collector current: 225A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRGPS4070D0 AUIRGPS4070D0.pdf
AUIRGPS4070D0
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 160A; 375W; SUPER247
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 160A
Power dissipation: 375W
Case: SUPER247
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 165ns
Turn-off time: 260ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AUIRGSL4062D1 AUIRGx4062D1.pdf
AUIRGSL4062D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Collector current: 39A
Gate-emitter voltage: ±20V
Power dissipation: 123W
Gate charge: 77nC
Pulsed collector current: 72A
Collector-emitter voltage: 600V
Turn-on time: 35ns
Turn-off time: 176ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+7.95 EUR
50+ 4.79 EUR
Mindestbestellmenge: 9
AUIRL1404ZSTRL auirl1404s.pdf
AUIRL1404ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Mounting: SMD
Drain current: 130A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Gate charge: 110nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 790A
Case: D2PAK
Drain-source voltage: 40V
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
AUIRL7732S2TR auirl7732s2.pdf
AUIRL7732S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRL7736M2TR auirl7736m2.pdf
AUIRL7736M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
AUIRL7766M2TR auirl7766m2.pdf
AUIRL7766M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 62.5W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 4800 Stücke
Produkt ist nicht verfügbar
AUIRLR2905ZTRL AUIRLR2905Z.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
AUIRLS3034 AUIRLS3034.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BA592E6327HTSA1 BAx92-DTE.pdf
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
375+ 0.19 EUR
425+ 0.17 EUR
485+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 335
BA592E6327HTSA1 BAx92-DTE.pdf
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
335+0.21 EUR
375+ 0.19 EUR
425+ 0.17 EUR
485+ 0.15 EUR
515+ 0.14 EUR
Mindestbestellmenge: 335
BA885E6327 BAx95-DTE.pdf
BA885E6327
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.19...0.45pF
Semiconductor structure: single diode
Leakage current: 20nA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1508 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
264+0.27 EUR
610+ 0.12 EUR
685+ 0.1 EUR
Mindestbestellmenge: 264
BA89202VH6127XTSA1 BAx92-DTE.pdf
BA89202VH6127XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Mounting: SMD
Case: SC79
Kind of package: reel; tape
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 120ns
Leakage current: 20nA
Type of diode: switching
Features of semiconductor devices: PIN; RF
Capacitance: 0.6...1.4pF
Max. off-state voltage: 35V
Max. forward voltage: 1V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5334 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
840+ 0.085 EUR
955+ 0.075 EUR
1100+ 0.065 EUR
1165+ 0.062 EUR
Mindestbestellmenge: 380
BAR6302VH6327XTSA1 BAR63xx_ser.pdf
BAR6302VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BAR6303WE6327HTSA1 BAR63xx_ser.pdf
BAR6303WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Case: SOD323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2684 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
311+ 0.23 EUR
412+ 0.17 EUR
635+ 0.11 EUR
824+ 0.087 EUR
910+ 0.079 EUR
Mindestbestellmenge: 209
BAR6402VH6327XTSA1 BAR64xx_Ser.pdf
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Case: SC79
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2010 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
281+ 0.25 EUR
472+ 0.15 EUR
633+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 179
BAR6405WH6327XTSA1 BAR64xx_Ser.pdf
BAR6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
55+1.3 EUR
100+ 0.72 EUR
117+ 0.61 EUR
321+ 0.23 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 55
BAR6402VH6327XTSA1 BAR64xx_Ser.pdf
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Case: SC79
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2010 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
281+ 0.25 EUR
472+ 0.15 EUR
633+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 179
BAR6403WE6327HTSA1 BAR64xx_Ser.pdf
BAR6403WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Max. off-state voltage: 50V
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1984 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
298+ 0.24 EUR
496+ 0.14 EUR
603+ 0.12 EUR
642+ 0.11 EUR
Mindestbestellmenge: 179
BAR6404E6327HTSA1 BAR64-04.pdf
BAR6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: double series
Max. off-state voltage: 150V
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2150 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
257+ 0.28 EUR
334+ 0.21 EUR
496+ 0.14 EUR
782+ 0.092 EUR
834+ 0.086 EUR
1000+ 0.084 EUR
Mindestbestellmenge: 173
BAR6502VH6327XTSA1 bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Type of diode: varicap
Capacitance: 0.5pF
Features of semiconductor devices: PIN; RF
Case: SC79
Mounting: SMD
Kind of package: reel; tape
Leakage current: 20nA
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BAR66E6327HTSA1 bar66series.pdf
BAR66E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Type of diode: switching
Power dissipation: 0.25W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Max. forward voltage: 1.2V
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 12A
Features of semiconductor devices: PIN
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2740 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
210+0.35 EUR
320+ 0.23 EUR
415+ 0.17 EUR
440+ 0.16 EUR
Mindestbestellmenge: 210
BAR81WH6327XTSA1 BAR81.pdf
BAR81WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Kind of package: reel; tape
Power dissipation: 0.1W
Features of semiconductor devices: RF
Type of diode: switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 960 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
44+1.64 EUR
112+ 0.64 EUR
126+ 0.57 EUR
145+ 0.49 EUR
153+ 0.47 EUR
Mindestbestellmenge: 44
BAS116E6327HTSA1 BAS116E6327.pdf
BAS116E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Load current: 0.25A
Max. forward voltage: 1.25V
Power dissipation: 0.37W
Reverse recovery time: 0.6µs
Type of diode: switching
Features of semiconductor devices: fast switching
Max. off-state voltage: 85V
Max. forward impulse current: 4.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2474 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
278+0.26 EUR
421+ 0.17 EUR
537+ 0.13 EUR
767+ 0.093 EUR
1374+ 0.052 EUR
1454+ 0.049 EUR
24000+ 0.047 EUR
Mindestbestellmenge: 278
BAS116E6433HTMA1 BAS116E6433.pdf
BAS116E6433HTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
BAS12504WH6327XTSA1 BAS125-0xW.pdf
BAS12504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT323; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
90+0.8 EUR
104+ 0.69 EUR
223+ 0.32 EUR
235+ 0.3 EUR
6000+ 0.29 EUR
Mindestbestellmenge: 90
BAS12507WH6327XTSA1 BAS125-0xW.pdf
BAS12507WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT343; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Case: SOT343
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BAS140WE6327HTSA1 BAS140WE6327HTSA1.pdf
BAS140WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOD323; 250mW
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOD323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12210 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
417+ 0.17 EUR
592+ 0.12 EUR
1137+ 0.063 EUR
1202+ 0.059 EUR
Mindestbestellmenge: 186
BAS1602VH6327XTSA1 BAS1602VH6327XTSA1.pdf
BAS1602VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3792 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
556+0.13 EUR
676+ 0.11 EUR
754+ 0.095 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1250+ 0.057 EUR
1323+ 0.054 EUR
Mindestbestellmenge: 556
BAS1603WE6327HTSA1 BAS1603WE6327HTSA1.pdf
BAS1603WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3374 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
410+0.17 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1205+ 0.059 EUR
1275+ 0.056 EUR
Mindestbestellmenge: 410
BAS16E6327HTSA1 BAS1603WE6327HTSA1.pdf
BAS16E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17027 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
777+0.092 EUR
893+ 0.08 EUR
1087+ 0.066 EUR
1211+ 0.059 EUR
1306+ 0.055 EUR
1489+ 0.048 EUR
1578+ 0.045 EUR
Mindestbestellmenge: 777
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