AUIRF7736M2TR Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 22A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
auf Bestellung 3858 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.7 EUR |
| 10+ | 4.79 EUR |
| 100+ | 3.87 EUR |
| 500+ | 3.44 EUR |
| 1000+ | 2.95 EUR |
| 2000+ | 2.77 EUR |
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Technische Details AUIRF7736M2TR Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric M4, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: DirectFET™ Isometric M4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V.
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