AUIRFR5305TRL Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 55V 31A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH Si 55V 31A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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77+ | 2 EUR |
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Technische Details AUIRFR5305TRL Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO252-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRFR5305TRL nach Preis ab 1.57 EUR bis 5.14 EUR
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AUIRFR5305TRL | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 31A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFR5305TRL | Hersteller : Infineon Technologies | Trans MOSFET P-CH Si 55V 31A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2923 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFR5305TRL | Hersteller : Infineon Technologies | Trans MOSFET P-CH Si 55V 31A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFR5305TRL | Hersteller : Infineon Technologies | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms |
auf Bestellung 447542 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFR5305TRL | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 31A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO252-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6737 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRFR5305TRL | Hersteller : INFINEON |
Description: INFINEON - AUIRFR5305TRL - Leistungs-MOSFET, p-Kanal, 55 V, 31 A, 0.065 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 110W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.065ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 11163 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFR5305TRL | Hersteller : INFINEON |
Description: INFINEON - AUIRFR5305TRL - Leistungs-MOSFET, p-Kanal, 55 V, 31 A, 0.065 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 110W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.065ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 11163 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFR5305TRL | Hersteller : Infineon Technologies | Trans MOSFET P-CH Si 55V 31A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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AUIRFR5305TRL | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -22A Pulsed drain current: -110A Power dissipation: 110W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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AUIRFR5305TRL | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -22A Pulsed drain current: -110A Power dissipation: 110W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |