AUIRF7665S2TR

AUIRF7665S2TR Infineon Technologies


3435673316006257auirf7665s2.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 100V 4.1A Automotive 6-Pin Direct-FET SB T/R
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Technische Details AUIRF7665S2TR Infineon Technologies

Description: MOSFET N-CH 100V 4.1A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V, Power Dissipation (Max): 2.4W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 5V @ 25µA, Supplier Device Package: DIRECTFET SB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V.

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AUIRF7665S2TR AUIRF7665S2TR Hersteller : INFINEON TECHNOLOGIES auirf7665s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 4800 Stücke
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AUIRF7665S2TR AUIRF7665S2TR Hersteller : Infineon Technologies auirf7665s2.pdf?fileId=5546d462533600a4015355ad848013f0 Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Produkt ist nicht verfügbar
AUIRF7665S2TR AUIRF7665S2TR Hersteller : Infineon Technologies auirf7665s2-3159804.pdf MOSFET 100V AUTO GRADE 1 N-CH HEXFET
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AUIRF7665S2TR AUIRF7665S2TR Hersteller : INFINEON TECHNOLOGIES auirf7665s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar