AUIRF7737L2TR Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 31A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V
Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DIRECTFET L6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 4.16 EUR |
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Technische Details AUIRF7737L2TR Infineon Technologies
Description: MOSFET N-CH 40V 31A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V, Power Dissipation (Max): 3.3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: DIRECTFET L6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V.
Weitere Produktangebote AUIRF7737L2TR nach Preis ab 4.16 EUR bis 8.54 EUR
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AUIRF7737L2TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 31A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 94A, 10V Power Dissipation (Max): 3.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: DIRECTFET L6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5469 pF @ 25 V |
auf Bestellung 7387 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF7737L2TR | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - AUIRF7737L2TR - AUIRF7737L2 20V-40V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 7216 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7737L2TR | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 156A Power dissipation: 83W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
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AUIRF7737L2TR | Hersteller : Infineon Technologies |
MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7.9mOhms |
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AUIRF7737L2TR | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 156A Power dissipation: 83W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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