AUIRF7669L2TR Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 100V 19A Automotive AEC-Q101 15-Pin Direct-FET L8 T/R
Trans MOSFET N-CH Si 100V 19A Automotive AEC-Q101 15-Pin Direct-FET L8 T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 9.78 EUR |
17+ | 8.84 EUR |
25+ | 8.45 EUR |
100+ | 7.55 EUR |
250+ | 7.19 EUR |
500+ | 6.78 EUR |
1000+ | 6.39 EUR |
3000+ | 6.29 EUR |
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Technische Details AUIRF7669L2TR Infineon Technologies
Description: MOSFET N-CH 100V 19A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V, Power Dissipation (Max): 3.3W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DirectFET™ Isometric L8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V.
Weitere Produktangebote AUIRF7669L2TR nach Preis ab 6.29 EUR bis 16.67 EUR
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AUIRF7669L2TR | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 100V 19A Automotive AEC-Q101 15-Pin Direct-FET L8 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7669L2TR | Hersteller : Infineon Technologies | MOSFET 100V AUTO GRADE 1 N-CH HEXFET |
auf Bestellung 2502 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF7669L2TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 19A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V |
auf Bestellung 3970 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF7669L2TR | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 100V 19A Automotive 15-Pin Direct-FET L8 T/R |
Produkt ist nicht verfügbar |
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AUIRF7669L2TR | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 100V 19A Automotive AEC-Q101 15-Pin Direct-FET L8 T/R |
Produkt ist nicht verfügbar |
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AUIRF7669L2TR | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 114A Power dissipation: 100W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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AUIRF7669L2TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 19A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V |
Produkt ist nicht verfügbar |
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AUIRF7669L2TR | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 114A Power dissipation: 100W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |