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BSP129H6906XTSA1 Infineon Technologies
auf Bestellung 34428 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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272+ | 0.56 EUR |
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Technische Details BSP129H6906XTSA1 Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 108µA, Supplier Device Package: PG-SOT223-4, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V.
Weitere Produktangebote BSP129H6906XTSA1 nach Preis ab 0.46 EUR bis 1.75 EUR
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 34428 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 10015 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Mounting: SMD Polarisation: unipolar Case: SOT223 Drain-source voltage: 240V Drain current: 0.35A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Technology: SIPMOS™ Kind of channel: depleted Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 109 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Mounting: SMD Polarisation: unipolar Case: SOT223 Drain-source voltage: 240V Drain current: 0.35A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Technology: SIPMOS™ Kind of channel: depleted Gate-source voltage: ±20V |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : ROCHESTER ELECTRONICS |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 4548 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 108µA Supplier Device Package: PG-SOT223-4 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V |
Produkt ist nicht verfügbar |
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BSP129H6906XTSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 108µA Supplier Device Package: PG-SOT223-4 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V |
Produkt ist nicht verfügbar |