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CSD18531Q5A CSD18531Q5A TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18531q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2068 Stücke:
Lieferzeit 7-14 Tag (e)
36+1.99 EUR
40+ 1.79 EUR
53+ 1.36 EUR
56+ 1.29 EUR
Mindestbestellmenge: 36
CSD18531Q5AT CSD18531Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18531q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18532KCS CSD18532KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 191 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.52 EUR
32+ 2.26 EUR
42+ 1.73 EUR
44+ 1.63 EUR
50+ 1.57 EUR
Mindestbestellmenge: 29
CSD18532NQ5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532nq5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSON-CLIP8; 5x6mm
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 49nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18532Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSON-CLIP8; 5x6mm
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 44nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18533KCS CSD18533KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18533kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 191 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.92 EUR
42+ 1.73 EUR
46+ 1.57 EUR
55+ 1.32 EUR
58+ 1.24 EUR
Mindestbestellmenge: 38
CSD18533Q5AT CSD18533Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18533q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Technology: NexFET™
Mounting: SMD
Case: VSONP8
Power dissipation: 116W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1172 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.86 EUR
44+ 1.64 EUR
52+ 1.39 EUR
55+ 1.32 EUR
100+ 1.27 EUR
Mindestbestellmenge: 39
CSD18534KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 164A; 107W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 164A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18534Q5AT CSD18534Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 77W; VSONP8; 5x6mm
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 77W
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 17nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: VSONP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1238 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.5 EUR
34+ 2.13 EUR
45+ 1.6 EUR
48+ 1.52 EUR
250+ 1.44 EUR
Mindestbestellmenge: 29
CSD18535KCS CSD18535KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 263 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.8 EUR
21+ 3.53 EUR
26+ 2.76 EUR
28+ 2.6 EUR
50+ 2.5 EUR
Mindestbestellmenge: 19
CSD18535KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18535KTTT CSD18535KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18536KCS CSD18536KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3
Polarisation: unipolar
Power dissipation: 375W
Case: TO220-3
Kind of package: tube
Gate charge: 83nC
Mounting: THT
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.98 EUR
13+ 5.71 EUR
17+ 4.36 EUR
18+ 4.13 EUR
50+ 3.98 EUR
Mindestbestellmenge: 12
CSD18536KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18536KTTT CSD18536KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: NexFET™
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 108nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 465 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.99 EUR
14+ 5.13 EUR
15+ 4.85 EUR
100+ 4.66 EUR
Mindestbestellmenge: 11
CSD18537NKCS CSD18537NKCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18537nkcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 94W; TO220-3; 1.14÷1.4mm
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Gate charge: 14nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 262 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.67 EUR
53+ 1.36 EUR
73+ 0.99 EUR
77+ 0.93 EUR
Mindestbestellmenge: 43
CSD18537NQ5AT CSD18537NQ5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18537nq5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 75W; VSONP8; 5x6mm
Case: VSONP8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Dimensions: 5x6mm
Gate charge: 14nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)
36+2.03 EUR
41+ 1.76 EUR
56+ 1.29 EUR
59+ 1.22 EUR
250+ 1.17 EUR
Mindestbestellmenge: 36
CSD18540Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18540q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 188W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 188W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18541F5T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18541f5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.2A; Idm: 21A; 500mW
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 21A
Power dissipation: 0.5W
Case: PICOSTAR3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18542KCS CSD18542KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 200W; TO220-3
Case: TO220-3
Kind of package: tube
Technology: NexFET™
Mounting: THT
Power dissipation: 200W
Polarisation: unipolar
Gate charge: 44nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.79 EUR
29+ 2.52 EUR
37+ 1.94 EUR
39+ 1.84 EUR
50+ 1.77 EUR
Mindestbestellmenge: 26
CSD18542KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18542KTTT CSD18542KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Case: D2PAK
Kind of package: reel; tape
Technology: NexFET™
Mounting: SMD
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1843 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.27 EUR
25+ 2.95 EUR
32+ 2.25 EUR
34+ 2.12 EUR
Mindestbestellmenge: 22
CSD18543Q3AT CSD18543Q3AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18543q3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 66W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 66W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 11.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 3.3x3.3mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 909 Stücke:
Lieferzeit 7-14 Tag (e)
42+1.73 EUR
46+ 1.57 EUR
64+ 1.13 EUR
67+ 1.07 EUR
Mindestbestellmenge: 42
CSD18563Q5AT CSD18563Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Technology: NexFET™
Mounting: SMD
Case: VSONP8
Power dissipation: 116W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 534 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.82 EUR
45+ 1.6 EUR
56+ 1.29 EUR
59+ 1.22 EUR
100+ 1.19 EUR
Mindestbestellmenge: 40
CSD19501KCS CSD19501KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3
Technology: NexFET™
Case: TO220-3
Mounting: THT
On-state resistance: 5.5mΩ
Kind of package: tube
Power dissipation: 217W
Polarisation: unipolar
Gate charge: 38nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19502Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19502q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 195W; VSON-CLIP8; 5x6mm
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 48nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19503KCS CSD19503KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19503kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 188W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 877 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.86 EUR
43+ 1.67 EUR
49+ 1.49 EUR
56+ 1.29 EUR
59+ 1.22 EUR
Mindestbestellmenge: 39
CSD19505KCS CSD19505KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 150A; 300W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 150A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 881 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.42 EUR
32+ 2.3 EUR
33+ 2.17 EUR
250+ 2.1 EUR
Mindestbestellmenge: 21
CSD19505KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19505KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19506KCS CSD19506KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 150A; 375W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 150A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.72 EUR
12+ 6.23 EUR
15+ 4.89 EUR
16+ 4.62 EUR
50+ 4.45 EUR
Mindestbestellmenge: 11
CSD19506KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 375W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 375W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 200A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19506KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 375W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 375W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 200A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19531KCS CSD19531KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19531kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 286 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.3 EUR
36+ 2.03 EUR
38+ 1.92 EUR
46+ 1.57 EUR
49+ 1.49 EUR
250+ 1.43 EUR
Mindestbestellmenge: 32
CSD19531Q5AT CSD19531Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19531q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 125W; VSONP8; 5x6mm
Case: VSONP8
Mounting: SMD
On-state resistance: 5.3mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 100A
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 211 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.3 EUR
35+ 2.1 EUR
41+ 1.76 EUR
43+ 1.67 EUR
100+ 1.62 EUR
Mindestbestellmenge: 32
CSD19532KTT CSD19532KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 6.6mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 200A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 199 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.02 EUR
26+ 2.76 EUR
34+ 2.13 EUR
36+ 2.02 EUR
250+ 1.94 EUR
Mindestbestellmenge: 24
CSD19532KTTT CSD19532KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 6.6mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 200A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 404 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.23 EUR
25+ 2.97 EUR
32+ 2.3 EUR
33+ 2.19 EUR
50+ 2.09 EUR
Mindestbestellmenge: 23
CSD19532Q5BT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532q5b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 195W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 195W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19533KCS CSD19533KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 188W; TO220-3
Case: TO220-3
Mounting: THT
On-state resistance: 8.7mΩ
Kind of package: tube
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 100A
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Gate charge: 27nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.4 EUR
34+ 2.12 EUR
38+ 1.92 EUR
48+ 1.5 EUR
49+ 1.49 EUR
51+ 1.42 EUR
100+ 1.36 EUR
Mindestbestellmenge: 30
CSD19533Q5AT CSD19533Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 96W; VSONP8; 5x6mm
Case: VSONP8
Mounting: SMD
On-state resistance: 7.8mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 100A
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.17 EUR
39+ 1.86 EUR
53+ 1.37 EUR
55+ 1.3 EUR
250+ 1.26 EUR
Mindestbestellmenge: 33
CSD19534KCS CSD19534KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19534kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 118W; TO220-3
Case: TO220-3
Mounting: THT
On-state resistance: 13.7mΩ
Kind of package: tube
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 100A
Type of transistor: N-MOSFET
Power dissipation: 118W
Polarisation: unipolar
Gate charge: 16.4nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 760 Stücke:
Lieferzeit 7-14 Tag (e)
42+1.72 EUR
48+ 1.52 EUR
65+ 1.12 EUR
68+ 1.06 EUR
500+ 1.03 EUR
Mindestbestellmenge: 42
CSD19534Q5A CSD19534Q5A TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19534q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm
Case: VSONP8
Mounting: SMD
On-state resistance: 12.6mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 50A
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.12 EUR
89+ 0.8 EUR
250+ 0.49 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 64
CSD19534Q5AT CSD19534Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19534q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 63W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19535KCS CSD19535KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19535kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 300W; TO220-3
Case: TO220-3
Mounting: THT
On-state resistance: 3.1mΩ
Kind of package: tube
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 78nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.42 EUR
18+ 3.98 EUR
24+ 3.05 EUR
25+ 2.89 EUR
50+ 2.77 EUR
Mindestbestellmenge: 17
CSD19535KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19535ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 300W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 400A
Drain-source voltage: 100V
Drain current: 200A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19535KTTT CSD19535KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19535ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 300W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 4.1mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 200A
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 75nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.89 EUR
17+ 4.39 EUR
20+ 3.59 EUR
22+ 3.39 EUR
50+ 3.27 EUR
Mindestbestellmenge: 15
CSD19536KCS CSD19536KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19536kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 375W; TO220-3
Case: TO220-3
Mounting: THT
On-state resistance: 2.3mΩ
Kind of package: tube
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 118nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 252 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.23 EUR
18+ 3.99 EUR
19+ 3.78 EUR
100+ 3.62 EUR
Mindestbestellmenge: 14
CSD19536KTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19536ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19536KTTT CSD19536KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19536ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19537Q3T CSD19537Q3T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19537q3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 83W; VSON-CLIP8
Case: VSON-CLIP8
Mounting: SMD
On-state resistance: 12.1mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 50A
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Dimensions: 3.3x3.3mm
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.82 EUR
48+ 1.5 EUR
65+ 1.1 EUR
69+ 1.04 EUR
500+ 1 EUR
Mindestbestellmenge: 40
CSD19538Q2T CSD19538Q2T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm
Case: WSON6
Mounting: SMD
On-state resistance: 49mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 14.4A
Type of transistor: N-MOSFET
Power dissipation: 20.2W
Polarisation: unipolar
Dimensions: 2x2mm
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2495 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
54+ 1.34 EUR
74+ 0.97 EUR
77+ 0.93 EUR
250+ 0.89 EUR
Mindestbestellmenge: 45
CSD19538Q3AT CSD19538Q3AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 23W; VSONP8; 3.3x3.3mm
Case: VSONP8
Mounting: SMD
On-state resistance: 49mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 15A
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Dimensions: 3.3x3.3mm
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 691 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.17 EUR
68+ 1.06 EUR
92+ 0.78 EUR
97+ 0.74 EUR
250+ 0.71 EUR
Mindestbestellmenge: 61
CSD22204WT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd22204w Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -5A; Idm: -80A; 1.7W; DSBGA9
Kind of package: reel; tape
Drain-source voltage: -8V
Drain current: -5A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -80A
Mounting: SMD
Case: DSBGA9
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD22205LT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd22205l Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -7.4A; Idm: -71A; 0.6W
Mounting: SMD
Case: PICOSTAR4
Kind of channel: enhanced
Drain-source voltage: -8V
Type of transistor: P-MOSFET
Gate-source voltage: ±6V
Kind of package: reel; tape
On-state resistance: 40mΩ
Pulsed drain current: -71A
Power dissipation: 0.6W
Polarisation: unipolar
Technology: NexFET™
Drain current: -7.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD22206WT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd22206w Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -5A; Idm: -108A; 1.7W; DSBGA9
Mounting: SMD
Case: DSBGA9
Kind of channel: enhanced
Drain-source voltage: -8V
Type of transistor: P-MOSFET
Gate-source voltage: ±6V
Kind of package: reel; tape
On-state resistance: 9.1mΩ
Pulsed drain current: -108A
Power dissipation: 1.7W
Polarisation: unipolar
Technology: NexFET™
Drain current: -5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD23202W10T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23202w10 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.2A; Idm: -25A; 1W; DSBGA4
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: DSBGA4
Drain current: -2.2A
On-state resistance: 123mΩ
Polarisation: unipolar
Kind of channel: enhanced
Technology: NexFET™
Pulsed drain current: -25A
Gate-source voltage: ±6V
Type of transistor: P-MOSFET
Drain-source voltage: -12V
Produkt ist nicht verfügbar
CSD23203WT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23203w Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; Idm: -54A; 0.75W; DSBGA6
Kind of package: reel; tape
Drain-source voltage: -8V
Drain current: -3A
On-state resistance: 53mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.75W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -54A
Mounting: SMD
Case: DSBGA6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD23280F3T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23280f3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; 2.9A; Idm: 11.4A; 1.4W
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: 2.9A
On-state resistance: 0.399Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 11.4A
Mounting: SMD
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD23285F5T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23285f5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.4A; Idm: -31A; 1.4W
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -5.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -31A
Mounting: SMD
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD23381F4T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23381f4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.3A; Idm: -9A; 500mW
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -2.3A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -9A
Mounting: SMD
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18531Q5A suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18531q5a
CSD18531Q5A
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2068 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+1.99 EUR
40+ 1.79 EUR
53+ 1.36 EUR
56+ 1.29 EUR
Mindestbestellmenge: 36
CSD18531Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18531q5a
CSD18531Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18532KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532kcs
CSD18532KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 191 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
29+2.52 EUR
32+ 2.26 EUR
42+ 1.73 EUR
44+ 1.63 EUR
50+ 1.57 EUR
Mindestbestellmenge: 29
CSD18532NQ5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532nq5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSON-CLIP8; 5x6mm
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 49nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18532Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18532q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSON-CLIP8; 5x6mm
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 44nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18533KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18533kcs
CSD18533KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 191 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.92 EUR
42+ 1.73 EUR
46+ 1.57 EUR
55+ 1.32 EUR
58+ 1.24 EUR
Mindestbestellmenge: 38
CSD18533Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18533q5a
CSD18533Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Technology: NexFET™
Mounting: SMD
Case: VSONP8
Power dissipation: 116W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1172 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.86 EUR
44+ 1.64 EUR
52+ 1.39 EUR
55+ 1.32 EUR
100+ 1.27 EUR
Mindestbestellmenge: 39
CSD18534KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534kcs
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 164A; 107W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 164A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18534Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a
CSD18534Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 77W; VSONP8; 5x6mm
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 77W
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 17nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: VSONP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1238 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
29+2.5 EUR
34+ 2.13 EUR
45+ 1.6 EUR
48+ 1.52 EUR
250+ 1.44 EUR
Mindestbestellmenge: 29
CSD18535KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535kcs
CSD18535KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 263 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.8 EUR
21+ 3.53 EUR
26+ 2.76 EUR
28+ 2.6 EUR
50+ 2.5 EUR
Mindestbestellmenge: 19
CSD18535KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18535KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt
CSD18535KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18536KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536kcs
CSD18536KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3
Polarisation: unipolar
Power dissipation: 375W
Case: TO220-3
Kind of package: tube
Gate charge: 83nC
Mounting: THT
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+5.98 EUR
13+ 5.71 EUR
17+ 4.36 EUR
18+ 4.13 EUR
50+ 3.98 EUR
Mindestbestellmenge: 12
CSD18536KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18536KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt
CSD18536KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Technology: NexFET™
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 108nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 465 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.99 EUR
14+ 5.13 EUR
15+ 4.85 EUR
100+ 4.66 EUR
Mindestbestellmenge: 11
CSD18537NKCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18537nkcs
CSD18537NKCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 94W; TO220-3; 1.14÷1.4mm
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Gate charge: 14nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 262 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
43+1.67 EUR
53+ 1.36 EUR
73+ 0.99 EUR
77+ 0.93 EUR
Mindestbestellmenge: 43
CSD18537NQ5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18537nq5a
CSD18537NQ5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 75W; VSONP8; 5x6mm
Case: VSONP8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Dimensions: 5x6mm
Gate charge: 14nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+2.03 EUR
41+ 1.76 EUR
56+ 1.29 EUR
59+ 1.22 EUR
250+ 1.17 EUR
Mindestbestellmenge: 36
CSD18540Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18540q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 188W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 188W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18541F5T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18541f5
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.2A; Idm: 21A; 500mW
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 21A
Power dissipation: 0.5W
Case: PICOSTAR3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18542KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542kcs
CSD18542KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 200W; TO220-3
Case: TO220-3
Kind of package: tube
Technology: NexFET™
Mounting: THT
Power dissipation: 200W
Polarisation: unipolar
Gate charge: 44nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
26+2.79 EUR
29+ 2.52 EUR
37+ 1.94 EUR
39+ 1.84 EUR
50+ 1.77 EUR
Mindestbestellmenge: 26
CSD18542KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18542KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt
CSD18542KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Case: D2PAK
Kind of package: reel; tape
Technology: NexFET™
Mounting: SMD
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 5.1mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1843 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.27 EUR
25+ 2.95 EUR
32+ 2.25 EUR
34+ 2.12 EUR
Mindestbestellmenge: 22
CSD18543Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18543q3a
CSD18543Q3AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 66W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 66W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 11.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 3.3x3.3mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 909 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
42+1.73 EUR
46+ 1.57 EUR
64+ 1.13 EUR
67+ 1.07 EUR
Mindestbestellmenge: 42
CSD18563Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a
CSD18563Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Technology: NexFET™
Mounting: SMD
Case: VSONP8
Power dissipation: 116W
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 534 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.82 EUR
45+ 1.6 EUR
56+ 1.29 EUR
59+ 1.22 EUR
100+ 1.19 EUR
Mindestbestellmenge: 40
CSD19501KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs
CSD19501KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3
Technology: NexFET™
Case: TO220-3
Mounting: THT
On-state resistance: 5.5mΩ
Kind of package: tube
Power dissipation: 217W
Polarisation: unipolar
Gate charge: 38nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19502Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19502q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 195W; VSON-CLIP8; 5x6mm
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 48nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19503KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19503kcs
CSD19503KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 188W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 877 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.86 EUR
43+ 1.67 EUR
49+ 1.49 EUR
56+ 1.29 EUR
59+ 1.22 EUR
Mindestbestellmenge: 39
CSD19505KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505kcs
CSD19505KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 150A; 300W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 150A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 881 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
21+3.42 EUR
32+ 2.3 EUR
33+ 2.17 EUR
250+ 2.1 EUR
Mindestbestellmenge: 21
CSD19505KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19505KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19505ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19506KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506kcs
CSD19506KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 150A; 375W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 150A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.72 EUR
12+ 6.23 EUR
15+ 4.89 EUR
16+ 4.62 EUR
50+ 4.45 EUR
Mindestbestellmenge: 11
CSD19506KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 375W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 375W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 200A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19506KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19506ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; Idm: 400A; 375W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 375W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 80V
Drain current: 200A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19531KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19531kcs
CSD19531KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 286 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.3 EUR
36+ 2.03 EUR
38+ 1.92 EUR
46+ 1.57 EUR
49+ 1.49 EUR
250+ 1.43 EUR
Mindestbestellmenge: 32
CSD19531Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19531q5a
CSD19531Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 125W; VSONP8; 5x6mm
Case: VSONP8
Mounting: SMD
On-state resistance: 5.3mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 100A
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 211 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.3 EUR
35+ 2.1 EUR
41+ 1.76 EUR
43+ 1.67 EUR
100+ 1.62 EUR
Mindestbestellmenge: 32
CSD19532KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt
CSD19532KTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 6.6mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 200A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 199 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3.02 EUR
26+ 2.76 EUR
34+ 2.13 EUR
36+ 2.02 EUR
250+ 1.94 EUR
Mindestbestellmenge: 24
CSD19532KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt
CSD19532KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 6.6mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 200A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 404 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.23 EUR
25+ 2.97 EUR
32+ 2.3 EUR
33+ 2.19 EUR
50+ 2.09 EUR
Mindestbestellmenge: 23
CSD19532Q5BT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532q5b
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 195W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 195W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19533KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533kcs
CSD19533KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 188W; TO220-3
Case: TO220-3
Mounting: THT
On-state resistance: 8.7mΩ
Kind of package: tube
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 100A
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Gate charge: 27nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.4 EUR
34+ 2.12 EUR
38+ 1.92 EUR
48+ 1.5 EUR
49+ 1.49 EUR
51+ 1.42 EUR
100+ 1.36 EUR
Mindestbestellmenge: 30
CSD19533Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a
CSD19533Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 96W; VSONP8; 5x6mm
Case: VSONP8
Mounting: SMD
On-state resistance: 7.8mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 100A
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 238 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.17 EUR
39+ 1.86 EUR
53+ 1.37 EUR
55+ 1.3 EUR
250+ 1.26 EUR
Mindestbestellmenge: 33
CSD19534KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19534kcs
CSD19534KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 118W; TO220-3
Case: TO220-3
Mounting: THT
On-state resistance: 13.7mΩ
Kind of package: tube
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 100A
Type of transistor: N-MOSFET
Power dissipation: 118W
Polarisation: unipolar
Gate charge: 16.4nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 760 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
42+1.72 EUR
48+ 1.52 EUR
65+ 1.12 EUR
68+ 1.06 EUR
500+ 1.03 EUR
Mindestbestellmenge: 42
CSD19534Q5A suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19534q5a
CSD19534Q5A
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm
Case: VSONP8
Mounting: SMD
On-state resistance: 12.6mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 50A
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
64+1.12 EUR
89+ 0.8 EUR
250+ 0.49 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 64
CSD19534Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19534q5a
CSD19534Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 63W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19535KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19535kcs
CSD19535KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 300W; TO220-3
Case: TO220-3
Mounting: THT
On-state resistance: 3.1mΩ
Kind of package: tube
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 78nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.42 EUR
18+ 3.98 EUR
24+ 3.05 EUR
25+ 2.89 EUR
50+ 2.77 EUR
Mindestbestellmenge: 17
CSD19535KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19535ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 300W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 400A
Drain-source voltage: 100V
Drain current: 200A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19535KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19535ktt
CSD19535KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 300W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 4.1mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 200A
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 75nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.89 EUR
17+ 4.39 EUR
20+ 3.59 EUR
22+ 3.39 EUR
50+ 3.27 EUR
Mindestbestellmenge: 15
CSD19536KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19536kcs
CSD19536KCS
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 375W; TO220-3
Case: TO220-3
Mounting: THT
On-state resistance: 2.3mΩ
Kind of package: tube
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Gate charge: 118nC
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 252 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
14+5.23 EUR
18+ 3.99 EUR
19+ 3.78 EUR
100+ 3.62 EUR
Mindestbestellmenge: 14
CSD19536KTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19536ktt
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19536KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19536ktt
CSD19536KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD19537Q3T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19537q3
CSD19537Q3T
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 83W; VSON-CLIP8
Case: VSON-CLIP8
Mounting: SMD
On-state resistance: 12.1mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 50A
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Dimensions: 3.3x3.3mm
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.82 EUR
48+ 1.5 EUR
65+ 1.1 EUR
69+ 1.04 EUR
500+ 1 EUR
Mindestbestellmenge: 40
CSD19538Q2T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q2
CSD19538Q2T
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm
Case: WSON6
Mounting: SMD
On-state resistance: 49mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 14.4A
Type of transistor: N-MOSFET
Power dissipation: 20.2W
Polarisation: unipolar
Dimensions: 2x2mm
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2495 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.62 EUR
54+ 1.34 EUR
74+ 0.97 EUR
77+ 0.93 EUR
250+ 0.89 EUR
Mindestbestellmenge: 45
CSD19538Q3AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q3a
CSD19538Q3AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 23W; VSONP8; 3.3x3.3mm
Case: VSONP8
Mounting: SMD
On-state resistance: 49mΩ
Kind of package: reel; tape
Technology: NexFET™
Drain-source voltage: 100V
Drain current: 15A
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Dimensions: 3.3x3.3mm
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 691 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
61+1.17 EUR
68+ 1.06 EUR
92+ 0.78 EUR
97+ 0.74 EUR
250+ 0.71 EUR
Mindestbestellmenge: 61
CSD22204WT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd22204w
Hersteller: TEXAS INSTRUMENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -5A; Idm: -80A; 1.7W; DSBGA9
Kind of package: reel; tape
Drain-source voltage: -8V
Drain current: -5A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -80A
Mounting: SMD
Case: DSBGA9
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD22205LT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd22205l
Hersteller: TEXAS INSTRUMENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -7.4A; Idm: -71A; 0.6W
Mounting: SMD
Case: PICOSTAR4
Kind of channel: enhanced
Drain-source voltage: -8V
Type of transistor: P-MOSFET
Gate-source voltage: ±6V
Kind of package: reel; tape
On-state resistance: 40mΩ
Pulsed drain current: -71A
Power dissipation: 0.6W
Polarisation: unipolar
Technology: NexFET™
Drain current: -7.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD22206WT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd22206w
Hersteller: TEXAS INSTRUMENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -5A; Idm: -108A; 1.7W; DSBGA9
Mounting: SMD
Case: DSBGA9
Kind of channel: enhanced
Drain-source voltage: -8V
Type of transistor: P-MOSFET
Gate-source voltage: ±6V
Kind of package: reel; tape
On-state resistance: 9.1mΩ
Pulsed drain current: -108A
Power dissipation: 1.7W
Polarisation: unipolar
Technology: NexFET™
Drain current: -5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD23202W10T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23202w10
Hersteller: TEXAS INSTRUMENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.2A; Idm: -25A; 1W; DSBGA4
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: DSBGA4
Drain current: -2.2A
On-state resistance: 123mΩ
Polarisation: unipolar
Kind of channel: enhanced
Technology: NexFET™
Pulsed drain current: -25A
Gate-source voltage: ±6V
Type of transistor: P-MOSFET
Drain-source voltage: -12V
Produkt ist nicht verfügbar
CSD23203WT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23203w
Hersteller: TEXAS INSTRUMENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; Idm: -54A; 0.75W; DSBGA6
Kind of package: reel; tape
Drain-source voltage: -8V
Drain current: -3A
On-state resistance: 53mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.75W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -54A
Mounting: SMD
Case: DSBGA6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD23280F3T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23280f3
Hersteller: TEXAS INSTRUMENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; 2.9A; Idm: 11.4A; 1.4W
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: 2.9A
On-state resistance: 0.399Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: 11.4A
Mounting: SMD
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD23285F5T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23285f5
Hersteller: TEXAS INSTRUMENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.4A; Idm: -31A; 1.4W
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -5.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -31A
Mounting: SMD
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD23381F4T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23381f4
Hersteller: TEXAS INSTRUMENTS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.3A; Idm: -9A; 500mW
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -2.3A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -9A
Mounting: SMD
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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