CSD18535KCS TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 182 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.8 EUR |
| 21+ | 3.53 EUR |
| 26+ | 2.77 EUR |
| 28+ | 2.62 EUR |
| 50+ | 2.5 EUR |
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Technische Details CSD18535KCS TEXAS INSTRUMENTS
Description: MOSFET N-CH 60V 200A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V.
Weitere Produktangebote CSD18535KCS nach Preis ab 2.32 EUR bis 4.82 EUR
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CSD18535KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18535KCS | Hersteller : Texas Instruments |
MOSFETs 60-V, N channel NexFET™ power MOSFET, single TO-220, 2 mOhm 3-TO-220 -55 to 175 |
auf Bestellung 598 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18535KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 200A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V |
auf Bestellung 1929 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18535KCS Produktcode: 196763 |
Transistoren > MOSFET N-CH |
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CSD18535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube |
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CSD18535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD18535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |