CSD18536KTTT TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 108nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.21 EUR |
| 14+ | 5.13 EUR |
| 15+ | 4.85 EUR |
| 100+ | 4.66 EUR |
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Technische Details CSD18536KTTT TEXAS INSTRUMENTS
Description: MOSFET N-CH 60V 200A/349A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V.
Weitere Produktangebote CSD18536KTTT nach Preis ab 4.66 EUR bis 18.5 EUR
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CSD18536KTTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 108nC Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: D2PAK Drain-source voltage: 60V Drain current: 200A On-state resistance: 2.2mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 465 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18536KTTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 200A/349A DDPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V |
auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KTTT | Hersteller : Texas Instruments |
MOSFETs 60-V, N channel NexFET™ power MOSFET, single D2PAK, 1.6 mOhm 2-DDPAK/TO-263 -55 to 175 |
auf Bestellung 863 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KTTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 200A/349A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V |
auf Bestellung 566 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD18536KTTT | Hersteller : Texas Instruments |
N-канальний ПТ; Udss, В = 60; Id = 200 А; Ptot, Вт = 375; Тип монт. = smd; Ciss, пФ @ Uds, В = 11430 @ 30; Qg, нКл = 140 @ 10 В; Rds = 1,6 мОм @ 100 A, 10 В; Tексп, °C = -55...+175; Ugs(th) = 2,2 В @ 250 мкА; Id2 = 279 А; D2PAK |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18536KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) DDPAK T/R |
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CSD18536KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R |
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CSD18536KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |