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CSD18532Q5BT Texas Instruments
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
57+ | 2.7 EUR |
61+ | 2.33 EUR |
100+ | 2.02 EUR |
250+ | 1.6 EUR |
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Technische Details CSD18532Q5BT Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V.
Weitere Produktangebote CSD18532Q5BT nach Preis ab 2.1 EUR bis 4.66 EUR
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CSD18532Q5BT | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V |
auf Bestellung 2750 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18532Q5BT | Hersteller : Texas Instruments |
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auf Bestellung 2746 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18532Q5BT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V |
auf Bestellung 2864 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18532Q5BT | Hersteller : Texas Instruments |
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CSD18532Q5BT | Hersteller : Texas Instruments |
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CSD18532Q5BT | Hersteller : Texas Instruments |
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CSD18532Q5BT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSON-CLIP8; 5x6mm Mounting: SMD Drain-source voltage: 60V Drain current: 100A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Dimensions: 5x6mm Gate charge: 44nC Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Case: VSON-CLIP8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18532Q5BT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSON-CLIP8; 5x6mm Mounting: SMD Drain-source voltage: 60V Drain current: 100A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Dimensions: 5x6mm Gate charge: 44nC Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Case: VSON-CLIP8 |
Produkt ist nicht verfügbar |