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CSD19534Q5A Texas Instruments
auf Bestellung 155000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.61 EUR |
5000+ | 0.55 EUR |
10000+ | 0.51 EUR |
25000+ | 0.48 EUR |
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Technische Details CSD19534Q5A Texas Instruments
Description: MOSFET N-CH 100V 50A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.2W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V.
Weitere Produktangebote CSD19534Q5A nach Preis ab 0.49 EUR bis 1.65 EUR
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CSD19534Q5A | Hersteller : Texas Instruments |
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auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19534Q5A | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19534Q5A | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 63W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 932 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19534Q5A | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 63W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm |
auf Bestellung 932 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19534Q5A | Hersteller : Texas Instruments |
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auf Bestellung 2249 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19534Q5A | Hersteller : Texas Instruments |
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auf Bestellung 17621 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19534Q5A | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V |
auf Bestellung 13623 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19534Q5A | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD19534Q5A | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |