CSD19532KTT Texas Instruments
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 1.89 EUR |
| 1000+ | 1.57 EUR |
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Technische Details CSD19532KTT Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V.
Weitere Produktangebote CSD19532KTT nach Preis ab 1.62 EUR bis 3.85 EUR
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CSD19532KTT | Hersteller : Texas Instruments |
 Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19532KTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19532KTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 400A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 279 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19532KTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 400A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 279 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19532KTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V |
auf Bestellung 3784 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19532KTT | Hersteller : Texas Instruments |
MOSFET CSD19532Q5B Pkg spin |
auf Bestellung 577 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19532KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19532KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
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CSD19532KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |