CSD18534KCS Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 60V 45A/100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 30 V
auf Bestellung 1255 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 2.15 EUR |
| 50+ | 1.73 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 0.94 EUR |
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Technische Details CSD18534KCS Texas Instruments
Description: MOSFET N-CH 60V 45A/100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 30 V.
Weitere Produktangebote CSD18534KCS nach Preis ab 0.88 EUR bis 4.37 EUR
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 164A; 107W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 164A Power dissipation: 107W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
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| CSD18534KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 164A; 107W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 164A Power dissipation: 107W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm |
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