CSD18537NKCS Texas Instruments
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.72 EUR |
| 2000+ | 0.68 EUR |
| 5000+ | 0.64 EUR |
| 10000+ | 0.59 EUR |
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Technische Details CSD18537NKCS Texas Instruments
Description: MOSFET N-CH 60V 50A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V.
Weitere Produktangebote CSD18537NKCS nach Preis ab 0.76 EUR bis 2.11 EUR
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CSD18537NKCS | Hersteller : TEXAS INSTRUMENTS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; 94W; TO220-3; 1.14÷1.4mm Case: TO220-3 Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 94W Gate charge: 14nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 262 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18537NKCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 94W; TO220-3; 1.14÷1.4mm Case: TO220-3 Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 94W Gate charge: 14nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18537NKCS | Hersteller : Texas Instruments |
MOSFET 60V N-Channel NexFET Pwr MOSFET |
auf Bestellung 1579 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18537NKCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 50A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V |
auf Bestellung 2275 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18537NKCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18537NKCS Produktcode: 154964 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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CSD18537NKCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD18537NKCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD18537NKCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD18537NKCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 50A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V |
Produkt ist nicht verfügbar |