Produkte > TEXAS INSTRUMENTS > Alle Produkte des Herstellers TEXAS INSTRUMENTS (594857) > Seite 4864 nach 9915
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CD74HCT86E | TEXAS INSTRUMENTS |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; THT; DIP14; 4.5÷5.5VDC; HCT Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: THT Case: DIP14 Supply voltage: 4.5...5.5V DC Family: HCT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1028 Stücke: Lieferzeit 7-14 Tag (e) |
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CD74HCT86M | TEXAS INSTRUMENTS |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; HCT Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Family: HCT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 159 Stücke: Lieferzeit 7-14 Tag (e) |
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CD74HCT86M96 | TEXAS INSTRUMENTS |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; HCT Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Family: HCT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 992 Stücke: Lieferzeit 7-14 Tag (e) |
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CD74HCT93E | TEXAS INSTRUMENTS |
Category: Counters/dividers Description: IC: digital; 4bit,binary counter; THT; DIP14; HCT; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: 4bit; binary counter Mounting: THT Case: DIP14 Family: HCT Supply voltage: 4.5...5.5V DC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 134 Stücke: Lieferzeit 7-14 Tag (e) |
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CD74HCU04M | TEXAS INSTRUMENTS |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; SMD; SO14; 2÷6VDC; -55÷125°C; tube; HCU Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HCU Anzahl je Verpackung: 1 Stücke |
auf Bestellung 215 Stücke: Lieferzeit 7-14 Tag (e) |
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CDCV304PW | TEXAS INSTRUMENTS |
Category: Supervisor circuits Description: IC: peripheral circuit; clock buffer; TSSOP8; 2.3÷3.6VDC; tube Type of integrated circuit: peripheral circuit Kind of integrated circuit: clock buffer Case: TSSOP8 Mounting: SMD Supply voltage: 2.3...3.6V DC Operating temperature: -40...85°C Kind of package: tube Number of channels: 1 Output current: 24mA Frequency: 200MHz Number of inputs/outputs: 1/4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CDCV304PWR | TEXAS INSTRUMENTS |
Category: Supervisor circuits Description: IC: peripheral circuit; clock buffer; TSSOP8; 2.3÷3.6VDC; Ch: 1 Mounting: SMD Operating temperature: -40...85°C Output current: 24mA Type of integrated circuit: peripheral circuit Number of channels: 1 Number of inputs/outputs: 1/4 Kind of package: reel; tape Kind of integrated circuit: clock buffer Case: TSSOP8 Supply voltage: 2.3...3.6V DC Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 188 Stücke: Lieferzeit 7-14 Tag (e) |
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CLC001AJE-TR13/NOPB | TEXAS INSTRUMENTS |
Category: Interfaces others - integrated circuits Description: IC: interface; line interface,line driver; 622Mbps; 3÷3.6VDC Type of integrated circuit: interface Kind of integrated circuit: line driver; line interface Data transfer rate: 622Mbps Supply voltage: 3...3.6V DC Interface: LVDS Mounting: SMD Case: SOIC8 Integrated circuit features: high speed Number of receivers: 0 Operating temperature: -40...85°C Number of channels: 1 Kind of package: reel; tape Number of transmitters: 1 Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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CLC001AJE/NOPB | TEXAS INSTRUMENTS |
Category: Interfaces others - integrated circuits Description: IC: interface; line interface,line driver; 622Mbps; 3÷3.6VDC Type of integrated circuit: interface Kind of integrated circuit: line driver; line interface Data transfer rate: 622Mbps Supply voltage: 3...3.6V DC Interface: LVDS Mounting: SMD Case: SOIC8 Integrated circuit features: high speed Number of receivers: 0 Operating temperature: -40...85°C Number of channels: 1 Kind of package: tube Number of transmitters: 1 Anzahl je Verpackung: 250 Stücke |
Produkt ist nicht verfügbar |
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CLVC1G125IDCKREP | TEXAS INSTRUMENTS |
Category: Buffers, transceivers, drivers Description: IC: digital; bus buffer; Ch: 1; CMOS; SMD; SC70; 1.65÷5.5VDC; 74LVC Technology: CMOS Case: SC70 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Type of integrated circuit: digital Number of channels: 1 Quiescent current: 10µA Kind of output: 3-state Kind of integrated circuit: bus buffer Family: 74LVC Supply voltage: 1.65...5.5V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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CLVC1G125QDBVRQ1 | TEXAS INSTRUMENTS |
Category: Buffers, transceivers, drivers Description: IC: digital; bus buffer; Ch: 1; CMOS; SMD; SOT23; 1.65÷5.5VDC; 74LVC Technology: CMOS Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Kind of output: 3-state Kind of integrated circuit: bus buffer Family: 74LVC Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Number of channels: 1 Quiescent current: 10µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD13302WT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 1.6A; Idm: 29A; 1.8W; DSBGA4 Kind of package: reel; tape On-state resistance: 25.8mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Mounting: SMD Drain current: 1.6A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 29A Case: DSBGA4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD13306WT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 3.5A; Idm: 44A; 1.9W; DSBGA6 Kind of package: reel; tape On-state resistance: 15.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar Mounting: SMD Drain current: 3.5A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 44A Case: DSBGA6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD13380F3T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 3.6A; Idm: 13.5A; 1.4W Kind of package: reel; tape On-state resistance: 135mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Mounting: SMD Drain current: 3.6A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 13.5A Case: PICOSTAR3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD13381F4T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 2.1A; Idm: 7A; 500mW; PICOSTAR3 Kind of package: reel; tape On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Mounting: SMD Drain current: 2.1A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 7A Case: PICOSTAR3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 243 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD13383F4T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 2.9A; Idm: 18.5A; 500mW Kind of package: reel; tape On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Mounting: SMD Drain current: 2.9A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 18.5A Case: PICOSTAR3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD13385F5 | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3 Kind of package: reel; tape On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Mounting: SMD Drain current: 7.1A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 41A Case: PICOSTAR3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD13385F5T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3 Kind of package: reel; tape On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Mounting: SMD Drain current: 7.1A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 41A Case: PICOSTAR3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD15380F3T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; Idm: 1.6A; 1.4W Mounting: SMD Kind of package: reel; tape Case: PICOSTAR3 Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 1.6A Polarisation: unipolar Power dissipation: 1.4W Type of transistor: N-MOSFET On-state resistance: 4Ω Drain current: 0.9A Drain-source voltage: 20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD16327Q3T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 240A; 74W; VSON-CLIP8 Technology: NexFET™ Mounting: SMD Case: VSON-CLIP8 Kind of package: reel; tape Power dissipation: 74W Application: automotive industry Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: -8...10V Pulsed drain current: 240A Drain-source voltage: 25V Drain current: 60A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD16401Q5T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 240A; 156W Technology: NexFET™ Mounting: SMD Case: VSON-CLIP8 Kind of package: reel; tape Power dissipation: 156W Application: automotive industry Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 240A Drain-source voltage: 25V Drain current: 100A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD16415Q5T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 200A; 156W Technology: NexFET™ Mounting: SMD Case: VSON-CLIP8 Kind of package: reel; tape Power dissipation: 156W Application: automotive industry Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 200A Drain-source voltage: 25V Drain current: 100A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD16570Q5BT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 195W; VSON-CLIP8; 5x6mm Type of transistor: N-MOSFET Case: VSON-CLIP8 Mounting: SMD Power dissipation: 195W Technology: NexFET™ Kind of package: reel; tape On-state resistance: 0.68mΩ Drain current: 100A Drain-source voltage: 25V Polarisation: unipolar Dimensions: 5x6mm Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17308Q3 | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 167A Power dissipation: 2.7W Case: VSON-CLIP8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 3.3x3.3mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 568 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17308Q3T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 167A Power dissipation: 2.7W Case: VSON-CLIP8 Gate-source voltage: ±10V On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 3.3x3.3mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 218 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17313Q2Q1T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 57A; 17W; WSON6 Mounting: SMD Application: automotive industry Power dissipation: 17W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: -8...10V Pulsed drain current: 57A Technology: NexFET™ Case: WSON6 Drain-source voltage: 30V Drain current: 5A On-state resistance: 42mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17313Q2T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 17W; WSON6; 2x2mm Mounting: SMD Power dissipation: 17W Polarisation: unipolar Kind of package: reel; tape Dimensions: 2x2mm Gate charge: 2.1nC Kind of channel: enhanced Gate-source voltage: ±10V Technology: NexFET™ Case: WSON6 Drain-source voltage: 30V Drain current: 5A On-state resistance: 26mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1931 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17318Q2T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21.5A; Idm: 68A; 16W; WSON6 Mounting: SMD Application: automotive industry Power dissipation: 16W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 68A Technology: NexFET™ Case: WSON6 Drain-source voltage: 30V Drain current: 21.5A On-state resistance: 30mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17381F4T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 12A; 500mW Mounting: SMD Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 12A Technology: NexFET™ Case: PICOSTAR3 Drain-source voltage: 30V Drain current: 3.1A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17382F4T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; Idm: 14.8A; 500mW Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.3A Pulsed drain current: 14.8A Power dissipation: 0.5W Case: PICOSTAR3 Gate-source voltage: ±10V On-state resistance: 0.18Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17483F4T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; Idm: 5A; 500mW; PICOSTAR3 Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 5A Mounting: SMD Case: PICOSTAR3 Drain-source voltage: 30V Drain current: 1.5A On-state resistance: 0.55Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17484F4T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 18A; 500mW; PICOSTAR3 Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 18A Mounting: SMD Case: PICOSTAR3 Drain-source voltage: 30V Drain current: 3A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17556Q5BT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 191W Polarisation: unipolar Case: VSON-CLIP8 Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 191W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17559Q5T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 96W Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 96W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17570Q5BT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; VSON-CLIP8; 5x6mm Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Dimensions: 5x6mm Gate charge: 93nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: VSON-CLIP8 Drain-source voltage: 30V Drain current: 100A On-state resistance: 0.74mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17571Q2 | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; 2.5W; WSON6 Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.4nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: WSON6 Drain-source voltage: 30V Drain current: 7.6A On-state resistance: 24mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17573Q5BT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 195W; VSON-CLIP8; 5x6mm Mounting: SMD Power dissipation: 195W Polarisation: unipolar Kind of package: reel; tape Dimensions: 5x6mm Gate charge: 49nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: VSON-CLIP8 Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.19Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17575Q3T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8 Dimensions: 3.3x3.3mm Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Case: VSON-CLIP8 Drain-source voltage: 30V Drain current: 60A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Power dissipation: 108W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 222 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17576Q5BT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Dimensions: 5x6mm Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: VSON-CLIP8 Drain-source voltage: 30V Drain current: 100A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 557 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17577Q3AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm Mounting: SMD Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Dimensions: 3.3x3.3mm Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: VSONP8 Drain-source voltage: 30V Drain current: 35A On-state resistance: 5.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17578Q3AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 37W; VSONP8; 3.3x3.3mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 37W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 3.3x3.3mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 462 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17579Q5AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Power dissipation: 36W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 239 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17581Q3AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; VSONP8; 3.3x3.3mm Mounting: SMD Case: VSONP8 Kind of package: reel; tape Dimensions: 3.3x3.3mm Power dissipation: 63W Polarisation: unipolar Gate charge: 20nC Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 60A On-state resistance: 3.9mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2137 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17585F5T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.9A; Idm: 34A; 1.4W; PICOSTAR3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.9A Pulsed drain current: 34A Power dissipation: 1.4W Case: PICOSTAR3 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18502KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 259W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 259W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 229 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18502Q5BT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 156W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18503Q5AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 120W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 886 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18504KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; TO220-3 Mounting: THT Drain-source voltage: 40V Drain current: 100A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Kind of package: tube Gate charge: 19nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 532 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18504Q5AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 77W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 77W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18509Q5BT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 195W; VSON-CLIP8; 5x6mm Dimensions: 5x6mm Drain-source voltage: 40V Drain current: 100A On-state resistance: 1mΩ Type of transistor: N-MOSFET Power dissipation: 195W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: VSON-CLIP8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18510KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 200A Pulsed drain current: 400A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18510KTT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 250W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: D2PAK Drain-source voltage: 40V Drain current: 200A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18510KTTT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK Case: D2PAK Kind of package: reel; tape Technology: NexFET™ Mounting: SMD Power dissipation: 250W Polarisation: unipolar Gate charge: 119nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 40V Drain current: 200A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18510Q5BT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 156W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 0.79mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18511KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 400A Power dissipation: 188W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18511KTT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 400A Power dissipation: 188W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18511KTTT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 400A Power dissipation: 188W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18511Q5AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 104W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 104W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18512Q5BT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 139W Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 139W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18514Q5AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 74W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 74W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 898 Stücke: Lieferzeit 7-14 Tag (e) |
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CD74HCT86E |
Hersteller: TEXAS INSTRUMENTS
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; THT; DIP14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: THT
Case: DIP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Anzahl je Verpackung: 1 Stücke
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; THT; DIP14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: THT
Case: DIP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1028 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
106+ | 0.68 EUR |
110+ | 0.65 EUR |
124+ | 0.58 EUR |
159+ | 0.45 EUR |
168+ | 0.43 EUR |
250+ | 0.41 EUR |
CD74HCT86M |
Hersteller: TEXAS INSTRUMENTS
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Anzahl je Verpackung: 1 Stücke
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 159 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 1.66 EUR |
56+ | 1.29 EUR |
80+ | 0.9 EUR |
85+ | 0.84 EUR |
CD74HCT86M96 |
Hersteller: TEXAS INSTRUMENTS
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Anzahl je Verpackung: 1 Stücke
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 992 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
84+ | 0.86 EUR |
100+ | 0.72 EUR |
253+ | 0.28 EUR |
268+ | 0.27 EUR |
CD74HCT93E |
Hersteller: TEXAS INSTRUMENTS
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter; THT; DIP14; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter
Mounting: THT
Case: DIP14
Family: HCT
Supply voltage: 4.5...5.5V DC
Anzahl je Verpackung: 1 Stücke
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter; THT; DIP14; HCT; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter
Mounting: THT
Case: DIP14
Family: HCT
Supply voltage: 4.5...5.5V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 134 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.77 EUR |
45+ | 1.62 EUR |
61+ | 1.17 EUR |
65+ | 1.12 EUR |
250+ | 1.07 EUR |
CD74HCU04M |
Hersteller: TEXAS INSTRUMENTS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; SMD; SO14; 2÷6VDC; -55÷125°C; tube; HCU
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HCU
Anzahl je Verpackung: 1 Stücke
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; SMD; SO14; 2÷6VDC; -55÷125°C; tube; HCU
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HCU
Anzahl je Verpackung: 1 Stücke
auf Bestellung 215 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
47+ | 1.53 EUR |
55+ | 1.3 EUR |
71+ | 1.02 EUR |
74+ | 0.97 EUR |
100+ | 0.96 EUR |
CDCV304PW |
Hersteller: TEXAS INSTRUMENTS
Category: Supervisor circuits
Description: IC: peripheral circuit; clock buffer; TSSOP8; 2.3÷3.6VDC; tube
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer
Case: TSSOP8
Mounting: SMD
Supply voltage: 2.3...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Number of channels: 1
Output current: 24mA
Frequency: 200MHz
Number of inputs/outputs: 1/4
Anzahl je Verpackung: 1 Stücke
Category: Supervisor circuits
Description: IC: peripheral circuit; clock buffer; TSSOP8; 2.3÷3.6VDC; tube
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer
Case: TSSOP8
Mounting: SMD
Supply voltage: 2.3...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Number of channels: 1
Output current: 24mA
Frequency: 200MHz
Number of inputs/outputs: 1/4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CDCV304PWR |
Hersteller: TEXAS INSTRUMENTS
Category: Supervisor circuits
Description: IC: peripheral circuit; clock buffer; TSSOP8; 2.3÷3.6VDC; Ch: 1
Mounting: SMD
Operating temperature: -40...85°C
Output current: 24mA
Type of integrated circuit: peripheral circuit
Number of channels: 1
Number of inputs/outputs: 1/4
Kind of package: reel; tape
Kind of integrated circuit: clock buffer
Case: TSSOP8
Supply voltage: 2.3...3.6V DC
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: Supervisor circuits
Description: IC: peripheral circuit; clock buffer; TSSOP8; 2.3÷3.6VDC; Ch: 1
Mounting: SMD
Operating temperature: -40...85°C
Output current: 24mA
Type of integrated circuit: peripheral circuit
Number of channels: 1
Number of inputs/outputs: 1/4
Kind of package: reel; tape
Kind of integrated circuit: clock buffer
Case: TSSOP8
Supply voltage: 2.3...3.6V DC
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 188 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.62 EUR |
23+ | 3.17 EUR |
24+ | 2.99 EUR |
500+ | 2.87 EUR |
CLC001AJE-TR13/NOPB |
Hersteller: TEXAS INSTRUMENTS
Category: Interfaces others - integrated circuits
Description: IC: interface; line interface,line driver; 622Mbps; 3÷3.6VDC
Type of integrated circuit: interface
Kind of integrated circuit: line driver; line interface
Data transfer rate: 622Mbps
Supply voltage: 3...3.6V DC
Interface: LVDS
Mounting: SMD
Case: SOIC8
Integrated circuit features: high speed
Number of receivers: 0
Operating temperature: -40...85°C
Number of channels: 1
Kind of package: reel; tape
Number of transmitters: 1
Anzahl je Verpackung: 1000 Stücke
Category: Interfaces others - integrated circuits
Description: IC: interface; line interface,line driver; 622Mbps; 3÷3.6VDC
Type of integrated circuit: interface
Kind of integrated circuit: line driver; line interface
Data transfer rate: 622Mbps
Supply voltage: 3...3.6V DC
Interface: LVDS
Mounting: SMD
Case: SOIC8
Integrated circuit features: high speed
Number of receivers: 0
Operating temperature: -40...85°C
Number of channels: 1
Kind of package: reel; tape
Number of transmitters: 1
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
CLC001AJE/NOPB |
Hersteller: TEXAS INSTRUMENTS
Category: Interfaces others - integrated circuits
Description: IC: interface; line interface,line driver; 622Mbps; 3÷3.6VDC
Type of integrated circuit: interface
Kind of integrated circuit: line driver; line interface
Data transfer rate: 622Mbps
Supply voltage: 3...3.6V DC
Interface: LVDS
Mounting: SMD
Case: SOIC8
Integrated circuit features: high speed
Number of receivers: 0
Operating temperature: -40...85°C
Number of channels: 1
Kind of package: tube
Number of transmitters: 1
Anzahl je Verpackung: 250 Stücke
Category: Interfaces others - integrated circuits
Description: IC: interface; line interface,line driver; 622Mbps; 3÷3.6VDC
Type of integrated circuit: interface
Kind of integrated circuit: line driver; line interface
Data transfer rate: 622Mbps
Supply voltage: 3...3.6V DC
Interface: LVDS
Mounting: SMD
Case: SOIC8
Integrated circuit features: high speed
Number of receivers: 0
Operating temperature: -40...85°C
Number of channels: 1
Kind of package: tube
Number of transmitters: 1
Anzahl je Verpackung: 250 Stücke
Produkt ist nicht verfügbar
CLVC1G125IDCKREP |
Hersteller: TEXAS INSTRUMENTS
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer; Ch: 1; CMOS; SMD; SC70; 1.65÷5.5VDC; 74LVC
Technology: CMOS
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of integrated circuit: bus buffer
Family: 74LVC
Supply voltage: 1.65...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer; Ch: 1; CMOS; SMD; SC70; 1.65÷5.5VDC; 74LVC
Technology: CMOS
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of integrated circuit: bus buffer
Family: 74LVC
Supply voltage: 1.65...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
CLVC1G125QDBVRQ1 |
Hersteller: TEXAS INSTRUMENTS
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer; Ch: 1; CMOS; SMD; SOT23; 1.65÷5.5VDC; 74LVC
Technology: CMOS
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of integrated circuit: bus buffer
Family: 74LVC
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Anzahl je Verpackung: 1 Stücke
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer; Ch: 1; CMOS; SMD; SOT23; 1.65÷5.5VDC; 74LVC
Technology: CMOS
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of integrated circuit: bus buffer
Family: 74LVC
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD13302WT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 1.6A; Idm: 29A; 1.8W; DSBGA4
Kind of package: reel; tape
On-state resistance: 25.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Mounting: SMD
Drain current: 1.6A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 29A
Case: DSBGA4
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 1.6A; Idm: 29A; 1.8W; DSBGA4
Kind of package: reel; tape
On-state resistance: 25.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Mounting: SMD
Drain current: 1.6A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 29A
Case: DSBGA4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD13306WT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.5A; Idm: 44A; 1.9W; DSBGA6
Kind of package: reel; tape
On-state resistance: 15.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Mounting: SMD
Drain current: 3.5A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 44A
Case: DSBGA6
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.5A; Idm: 44A; 1.9W; DSBGA6
Kind of package: reel; tape
On-state resistance: 15.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Mounting: SMD
Drain current: 3.5A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 44A
Case: DSBGA6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD13380F3T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.6A; Idm: 13.5A; 1.4W
Kind of package: reel; tape
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Mounting: SMD
Drain current: 3.6A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 13.5A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.6A; Idm: 13.5A; 1.4W
Kind of package: reel; tape
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Mounting: SMD
Drain current: 3.6A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 13.5A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD13381F4T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1A; Idm: 7A; 500mW; PICOSTAR3
Kind of package: reel; tape
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Mounting: SMD
Drain current: 2.1A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 7A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.1A; Idm: 7A; 500mW; PICOSTAR3
Kind of package: reel; tape
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Mounting: SMD
Drain current: 2.1A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 7A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 243 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
71+ | 1.02 EUR |
74+ | 0.97 EUR |
97+ | 0.74 EUR |
103+ | 0.7 EUR |
250+ | 0.67 EUR |
CSD13383F4T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.9A; Idm: 18.5A; 500mW
Kind of package: reel; tape
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Mounting: SMD
Drain current: 2.9A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 18.5A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 2.9A; Idm: 18.5A; 500mW
Kind of package: reel; tape
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Mounting: SMD
Drain current: 2.9A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 18.5A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD13385F5 |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3
Kind of package: reel; tape
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Mounting: SMD
Drain current: 7.1A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 41A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3
Kind of package: reel; tape
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Mounting: SMD
Drain current: 7.1A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 41A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
152+ | 0.47 EUR |
220+ | 0.33 EUR |
266+ | 0.27 EUR |
329+ | 0.22 EUR |
556+ | 0.13 EUR |
589+ | 0.12 EUR |
CSD13385F5T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3
Kind of package: reel; tape
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Mounting: SMD
Drain current: 7.1A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 41A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3
Kind of package: reel; tape
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Mounting: SMD
Drain current: 7.1A
Drain-source voltage: 12V
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 41A
Case: PICOSTAR3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD15380F3T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; Idm: 1.6A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Case: PICOSTAR3
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.6A
Polarisation: unipolar
Power dissipation: 1.4W
Type of transistor: N-MOSFET
On-state resistance: 4Ω
Drain current: 0.9A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; Idm: 1.6A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Case: PICOSTAR3
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.6A
Polarisation: unipolar
Power dissipation: 1.4W
Type of transistor: N-MOSFET
On-state resistance: 4Ω
Drain current: 0.9A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD16327Q3T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 240A; 74W; VSON-CLIP8
Technology: NexFET™
Mounting: SMD
Case: VSON-CLIP8
Kind of package: reel; tape
Power dissipation: 74W
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: -8...10V
Pulsed drain current: 240A
Drain-source voltage: 25V
Drain current: 60A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 240A; 74W; VSON-CLIP8
Technology: NexFET™
Mounting: SMD
Case: VSON-CLIP8
Kind of package: reel; tape
Power dissipation: 74W
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: -8...10V
Pulsed drain current: 240A
Drain-source voltage: 25V
Drain current: 60A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD16401Q5T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 240A; 156W
Technology: NexFET™
Mounting: SMD
Case: VSON-CLIP8
Kind of package: reel; tape
Power dissipation: 156W
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 240A
Drain-source voltage: 25V
Drain current: 100A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 240A; 156W
Technology: NexFET™
Mounting: SMD
Case: VSON-CLIP8
Kind of package: reel; tape
Power dissipation: 156W
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 240A
Drain-source voltage: 25V
Drain current: 100A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD16415Q5T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 200A; 156W
Technology: NexFET™
Mounting: SMD
Case: VSON-CLIP8
Kind of package: reel; tape
Power dissipation: 156W
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 200A
Drain-source voltage: 25V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 200A; 156W
Technology: NexFET™
Mounting: SMD
Case: VSON-CLIP8
Kind of package: reel; tape
Power dissipation: 156W
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 200A
Drain-source voltage: 25V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD16570Q5BT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 195W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Case: VSON-CLIP8
Mounting: SMD
Power dissipation: 195W
Technology: NexFET™
Kind of package: reel; tape
On-state resistance: 0.68mΩ
Drain current: 100A
Drain-source voltage: 25V
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 195W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Case: VSON-CLIP8
Mounting: SMD
Power dissipation: 195W
Technology: NexFET™
Kind of package: reel; tape
On-state resistance: 0.68mΩ
Drain current: 100A
Drain-source voltage: 25V
Polarisation: unipolar
Dimensions: 5x6mm
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17308Q3 |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 167A
Power dissipation: 2.7W
Case: VSON-CLIP8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 3.3x3.3mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 167A
Power dissipation: 2.7W
Case: VSON-CLIP8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 3.3x3.3mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 568 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
65+ | 1.1 EUR |
76+ | 0.94 EUR |
144+ | 0.5 EUR |
152+ | 0.47 EUR |
5000+ | 0.45 EUR |
CSD17308Q3T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 167A
Power dissipation: 2.7W
Case: VSON-CLIP8
Gate-source voltage: ±10V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 3.3x3.3mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 167A
Power dissipation: 2.7W
Case: VSON-CLIP8
Gate-source voltage: ±10V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 3.3x3.3mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 218 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
62+ | 1.16 EUR |
75+ | 0.96 EUR |
96+ | 0.75 EUR |
101+ | 0.71 EUR |
250+ | 0.69 EUR |
500+ | 0.68 EUR |
CSD17313Q2Q1T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 57A; 17W; WSON6
Mounting: SMD
Application: automotive industry
Power dissipation: 17W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: -8...10V
Pulsed drain current: 57A
Technology: NexFET™
Case: WSON6
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 57A; 17W; WSON6
Mounting: SMD
Application: automotive industry
Power dissipation: 17W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: -8...10V
Pulsed drain current: 57A
Technology: NexFET™
Case: WSON6
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17313Q2T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 17W; WSON6; 2x2mm
Mounting: SMD
Power dissipation: 17W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 2x2mm
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Technology: NexFET™
Case: WSON6
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 17W; WSON6; 2x2mm
Mounting: SMD
Power dissipation: 17W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 2x2mm
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Technology: NexFET™
Case: WSON6
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1931 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2 EUR |
67+ | 1.07 EUR |
87+ | 0.83 EUR |
91+ | 0.79 EUR |
CSD17318Q2T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.5A; Idm: 68A; 16W; WSON6
Mounting: SMD
Application: automotive industry
Power dissipation: 16W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 68A
Technology: NexFET™
Case: WSON6
Drain-source voltage: 30V
Drain current: 21.5A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.5A; Idm: 68A; 16W; WSON6
Mounting: SMD
Application: automotive industry
Power dissipation: 16W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 68A
Technology: NexFET™
Case: WSON6
Drain-source voltage: 30V
Drain current: 21.5A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17381F4T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 12A; 500mW
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 12A
Technology: NexFET™
Case: PICOSTAR3
Drain-source voltage: 30V
Drain current: 3.1A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 12A; 500mW
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 12A
Technology: NexFET™
Case: PICOSTAR3
Drain-source voltage: 30V
Drain current: 3.1A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17382F4T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; Idm: 14.8A; 500mW
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Pulsed drain current: 14.8A
Power dissipation: 0.5W
Case: PICOSTAR3
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; Idm: 14.8A; 500mW
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Pulsed drain current: 14.8A
Power dissipation: 0.5W
Case: PICOSTAR3
Gate-source voltage: ±10V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17483F4T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; Idm: 5A; 500mW; PICOSTAR3
Kind of package: reel; tape
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 5A
Mounting: SMD
Case: PICOSTAR3
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; Idm: 5A; 500mW; PICOSTAR3
Kind of package: reel; tape
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 5A
Mounting: SMD
Case: PICOSTAR3
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17484F4T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 18A; 500mW; PICOSTAR3
Kind of package: reel; tape
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 18A
Mounting: SMD
Case: PICOSTAR3
Drain-source voltage: 30V
Drain current: 3A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 18A; 500mW; PICOSTAR3
Kind of package: reel; tape
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 18A
Mounting: SMD
Case: PICOSTAR3
Drain-source voltage: 30V
Drain current: 3A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17556Q5BT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 191W
Polarisation: unipolar
Case: VSON-CLIP8
Kind of package: reel; tape
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 191W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 191W
Polarisation: unipolar
Case: VSON-CLIP8
Kind of package: reel; tape
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 191W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17559Q5T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 96W
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 96W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 96W
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 96W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17570Q5BT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; VSON-CLIP8; 5x6mm
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 93nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: NexFET™
Case: VSON-CLIP8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 0.74mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; VSON-CLIP8; 5x6mm
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 93nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: NexFET™
Case: VSON-CLIP8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 0.74mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17571Q2 |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; 2.5W; WSON6
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: NexFET™
Case: WSON6
Drain-source voltage: 30V
Drain current: 7.6A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; 2.5W; WSON6
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: NexFET™
Case: WSON6
Drain-source voltage: 30V
Drain current: 7.6A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17573Q5BT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 195W; VSON-CLIP8; 5x6mm
Mounting: SMD
Power dissipation: 195W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 49nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: NexFET™
Case: VSON-CLIP8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.19Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 195W; VSON-CLIP8; 5x6mm
Mounting: SMD
Power dissipation: 195W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 49nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: NexFET™
Case: VSON-CLIP8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.19Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD17575Q3T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8
Dimensions: 3.3x3.3mm
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: VSON-CLIP8
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 108W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8
Dimensions: 3.3x3.3mm
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: VSON-CLIP8
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 108W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 222 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
37+ | 1.97 EUR |
47+ | 1.53 EUR |
62+ | 1.16 EUR |
65+ | 1.1 EUR |
100+ | 1.06 EUR |
CSD17576Q5BT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: NexFET™
Case: VSON-CLIP8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 5x6mm
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: NexFET™
Case: VSON-CLIP8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 557 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.77 EUR |
48+ | 1.5 EUR |
57+ | 1.27 EUR |
60+ | 1.2 EUR |
100+ | 1.16 EUR |
CSD17577Q3AT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm
Mounting: SMD
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: NexFET™
Case: VSONP8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm
Mounting: SMD
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: NexFET™
Case: VSONP8
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.77 EUR |
48+ | 1.5 EUR |
66+ | 1.09 EUR |
70+ | 1.03 EUR |
250+ | 0.99 EUR |
CSD17578Q3AT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 37W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 37W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 3.3x3.3mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 37W; VSONP8; 3.3x3.3mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 37W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 3.3x3.3mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 462 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.76 EUR |
52+ | 1.39 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
250+ | 0.92 EUR |
CSD17579Q5AT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Power dissipation: 36W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Power dissipation: 36W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 239 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.76 EUR |
49+ | 1.49 EUR |
60+ | 1.2 EUR |
63+ | 1.14 EUR |
CSD17581Q3AT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; VSONP8; 3.3x3.3mm
Mounting: SMD
Case: VSONP8
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 20nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; VSONP8; 3.3x3.3mm
Mounting: SMD
Case: VSONP8
Kind of package: reel; tape
Dimensions: 3.3x3.3mm
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 20nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 60A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2137 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 1.14 EUR |
84+ | 0.86 EUR |
95+ | 0.76 EUR |
96+ | 0.75 EUR |
100+ | 0.72 EUR |
104+ | 0.69 EUR |
CSD17585F5T |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.9A; Idm: 34A; 1.4W; PICOSTAR3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.9A
Pulsed drain current: 34A
Power dissipation: 1.4W
Case: PICOSTAR3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.9A; Idm: 34A; 1.4W; PICOSTAR3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.9A
Pulsed drain current: 34A
Power dissipation: 1.4W
Case: PICOSTAR3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18502KCS |
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 259W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 259W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 259W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 259W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 229 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 2.95 EUR |
28+ | 2.65 EUR |
34+ | 2.14 EUR |
36+ | 2.02 EUR |
50+ | 1.94 EUR |
CSD18502Q5BT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18503Q5AT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 120W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 120W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 886 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
49+ | 1.49 EUR |
53+ | 1.36 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
CSD18504KCS |
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; TO220-3
Mounting: THT
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: tube
Gate charge: 19nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; TO220-3
Mounting: THT
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: tube
Gate charge: 19nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 532 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.82 EUR |
48+ | 1.5 EUR |
55+ | 1.3 EUR |
59+ | 1.23 EUR |
100+ | 1.19 EUR |
CSD18504Q5AT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 77W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 77W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 77W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 77W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18509Q5BT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 195W; VSON-CLIP8; 5x6mm
Dimensions: 5x6mm
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 195W; VSON-CLIP8; 5x6mm
Dimensions: 5x6mm
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: VSON-CLIP8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18510KCS |
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18510KTT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 250W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 200A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 250W
Polarisation: unipolar
Technology: NexFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 200A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18510KTTT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK
Case: D2PAK
Kind of package: reel; tape
Technology: NexFET™
Mounting: SMD
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 119nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 40V
Drain current: 200A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK
Case: D2PAK
Kind of package: reel; tape
Technology: NexFET™
Mounting: SMD
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 119nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 40V
Drain current: 200A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 2.86 EUR |
29+ | 2.53 EUR |
30+ | 2.4 EUR |
100+ | 2.3 EUR |
CSD18510Q5BT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 0.79mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 156W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 0.79mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18511KCS |
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 400A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 400A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18511KTT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 400A
Power dissipation: 188W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 400A
Power dissipation: 188W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18511KTTT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 400A
Power dissipation: 188W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 110A
Pulsed drain current: 400A
Power dissipation: 188W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18511Q5AT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 104W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 104W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 104W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 104W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18512Q5BT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 139W
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 139W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 139W
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 139W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
CSD18514Q5AT |
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 74W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 74W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 74W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 74W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 898 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.25 EUR |
43+ | 1.69 EUR |
55+ | 1.3 EUR |
59+ | 1.23 EUR |