CSD18514Q5AT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 40V 89A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 1.59 EUR |
| 500+ | 1.36 EUR |
| 1250+ | 1.11 EUR |
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Technische Details CSD18514Q5AT Texas Instruments
Description: MOSFET N-CH 40V 89A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V.
Weitere Produktangebote CSD18514Q5AT nach Preis ab 0.98 EUR bis 2.53 EUR
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CSD18514Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 74W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 74W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 898 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18514Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 74W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 74W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm |
auf Bestellung 898 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18514Q5AT | Hersteller : Texas Instruments |
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auf Bestellung 19547 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18514Q5AT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 89A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V |
auf Bestellung 2237 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18514Q5AT | Hersteller : Texas Instruments |
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CSD18514Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 50A 8-Pin VSONP EP T/R |
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CSD18514Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 50A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD18514Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 50A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |