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CSD17576Q5BT Texas Instruments
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Description: MOSFET N-CH 30V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V
auf Bestellung 10250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
250+ | 1.67 EUR |
500+ | 1.43 EUR |
1250+ | 1.17 EUR |
2500+ | 1.1 EUR |
6250+ | 1.04 EUR |
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Technische Details CSD17576Q5BT Texas Instruments
Description: MOSFET N-CH 30V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V.
Weitere Produktangebote CSD17576Q5BT nach Preis ab 1.05 EUR bis 2.68 EUR
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CSD17576Q5BT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Dimensions: 5x6mm Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: VSON-CLIP8 Drain-source voltage: 30V Drain current: 100A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 557 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17576Q5BT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Dimensions: 5x6mm Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: VSON-CLIP8 Drain-source voltage: 30V Drain current: 100A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET |
auf Bestellung 557 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17576Q5BT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V |
auf Bestellung 10477 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17576Q5BT | Hersteller : Texas Instruments |
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auf Bestellung 590 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17576Q5BT | Hersteller : Texas Instruments |
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CSD17576Q5BT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD17576Q5BT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD17576Q5BT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |