CSD17578Q3AT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 30V 20A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 1.35 EUR |
| 500+ | 1.16 EUR |
| 1250+ | 0.94 EUR |
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Technische Details CSD17578Q3AT Texas Instruments
Description: MOSFET N-CH 30V 20A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, Power Dissipation (Max): 3.2W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V.
Weitere Produktangebote CSD17578Q3AT nach Preis ab 0.85 EUR bis 2.15 EUR
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CSD17578Q3AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 37W; VSONP8; 3.3x3.3mm Mounting: SMD Power dissipation: 37W Polarisation: unipolar Kind of package: reel; tape Dimensions: 3.3x3.3mm Gate charge: 7.9nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: VSONP8 Drain-source voltage: 30V Drain current: 20A On-state resistance: 8.2mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 462 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17578Q3AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 37W; VSONP8; 3.3x3.3mm Mounting: SMD Power dissipation: 37W Polarisation: unipolar Kind of package: reel; tape Dimensions: 3.3x3.3mm Gate charge: 7.9nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: VSONP8 Drain-source voltage: 30V Drain current: 20A On-state resistance: 8.2mΩ Type of transistor: N-MOSFET |
auf Bestellung 462 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17578Q3AT | Hersteller : Texas Instruments |
MOSFETs 30V NCh NexFET Pwr MOSFET |
auf Bestellung 3683 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17578Q3AT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 20A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V |
auf Bestellung 1956 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17578Q3AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R |
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CSD17578Q3AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R |
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CSD17578Q3AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R |
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CSD17578Q3AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |