CSD18511KTT Texas Instruments
Hersteller: Texas InstrumentsMOSFET 40-V, N channel NexFET™ power MOSFET, single D2PAK, 2.6 mOhm 2-DDPAK/TO-263 -55 to 175
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.75 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.83 EUR |
| 250+ | 1.81 EUR |
| 500+ | 1.41 EUR |
| 1000+ | 1.2 EUR |
| 2500+ | 1.14 EUR |
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Technische Details CSD18511KTT Texas Instruments
Description: MOSFET N-CH 40V 194A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 194A (Ta), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V.
Weitere Produktangebote CSD18511KTT nach Preis ab 1.83 EUR bis 2.76 EUR
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CSD18511KTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 194A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 194A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 188W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V |
auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18511KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 110A 3-Pin(2+Tab) DDPAK T/R |
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CSD18511KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 110A 3-Pin(2+Tab) DDPAK T/R |
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CSD18511KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 110A 4-Pin(3+Tab) DDPAK T/R |
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CSD18511KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 110A 3-Pin(2+Tab) DDPAK T/R |
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| CSD18511KTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 400A Power dissipation: 188W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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CSD18511KTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 194A DDPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 194A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 188W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V |
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| CSD18511KTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 400A Power dissipation: 188W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |