CSD18502Q5BT Texas Instruments
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 2.5 EUR |
| 500+ | 2.28 EUR |
| 1000+ | 1.91 EUR |
| 1250+ | 1.82 EUR |
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Technische Details CSD18502Q5BT Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V.
Weitere Produktangebote CSD18502Q5BT nach Preis ab 2.23 EUR bis 4.38 EUR
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CSD18502Q5BT | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 40V 100A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V |
auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18502Q5BT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V |
auf Bestellung 1325 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18502Q5BT | Hersteller : Texas Instruments |
MOSFET 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150 |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18502Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
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CSD18502Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
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CSD18502Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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| CSD18502Q5BT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 156W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
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| CSD18502Q5BT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 156W; VSON-CLIP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 156W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm |
Produkt ist nicht verfügbar |