![CSD17318Q2T CSD17318Q2T](https://static6.arrow.com/aropdfconversion/arrowimages/4a98db1e6b409ec8da90ce3fff9b9229b46c3828/drv0006a.jpg)
CSD17318Q2T Texas Instruments
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
250+ | 0.72 EUR |
500+ | 0.63 EUR |
1000+ | 0.56 EUR |
1250+ | 0.54 EUR |
2500+ | 0.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD17318Q2T Texas Instruments
Description: MOSFET N-CHANNEL 30V 25A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V, Power Dissipation (Max): 16W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V.
Weitere Produktangebote CSD17318Q2T nach Preis ab 0.68 EUR bis 1.74 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
CSD17318Q2T | Hersteller : Texas Instruments |
![]() |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
CSD17318Q2T | Hersteller : Texas Instruments |
![]() |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
CSD17318Q2T | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
CSD17318Q2T | Hersteller : Texas Instruments |
![]() |
auf Bestellung 4891 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
CSD17318Q2T | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V |
auf Bestellung 3087 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
CSD17318Q2T | Hersteller : Texas Instruments |
![]() |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
![]() |
CSD17318Q2T | Hersteller : Texas Instruments |
![]() |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
![]() |
CSD17318Q2T | Hersteller : Texas Instruments |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
![]() |
CSD17318Q2T | Hersteller : Texas Instruments |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
CSD17318Q2T | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21.5A; Idm: 68A; 16W; WSON6 Mounting: SMD Application: automotive industry Power dissipation: 16W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 68A Technology: NexFET™ Case: WSON6 Drain-source voltage: 30V Drain current: 21.5A On-state resistance: 30mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
CSD17318Q2T | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21.5A; Idm: 68A; 16W; WSON6 Mounting: SMD Application: automotive industry Power dissipation: 16W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 68A Technology: NexFET™ Case: WSON6 Drain-source voltage: 30V Drain current: 21.5A On-state resistance: 30mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |