CSD18504Q5AT Texas Instruments
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 1.17 EUR |
| 500+ | 1.07 EUR |
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Technische Details CSD18504Q5AT Texas Instruments
Description: MOSFET N-CH 40V 50A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V, Power Dissipation (Max): 3.1W (Ta), 77W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1656 pF @ 20 V.
Weitere Produktangebote CSD18504Q5AT nach Preis ab 1.1 EUR bis 2.64 EUR
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CSD18504Q5AT | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 40V 50A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1656 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18504Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 50A 8-Pin VSONP EP T/R |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18504Q5AT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 50A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 17A, 10V Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1656 pF @ 20 V |
auf Bestellung 5144 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18504Q5AT | Hersteller : Texas Instruments |
MOSFET 40V,N-Ch NexFET Pwr MOSFET |
auf Bestellung 650 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18504Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 50A 8-Pin VSONP EP T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18504Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 50A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD18504Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 77W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 77W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18504Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 77W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 77W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm |
Produkt ist nicht verfügbar |