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CSD17577Q3AT Texas Instruments
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
250+ | 0.76 EUR |
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Technische Details CSD17577Q3AT Texas Instruments
Description: MOSFET N-CH 30V 35A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V, Power Dissipation (Max): 2.8W (Ta), 53W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V.
Weitere Produktangebote CSD17577Q3AT nach Preis ab 0.72 EUR bis 2.24 EUR
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CSD17577Q3AT | Hersteller : Texas Instruments |
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auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17577Q3AT | Hersteller : Texas Instruments |
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auf Bestellung 1750 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17577Q3AT | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17577Q3AT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm Mounting: SMD Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Dimensions: 3.3x3.3mm Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: VSONP8 Drain-source voltage: 30V Drain current: 35A On-state resistance: 5.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 185 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD17577Q3AT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm Mounting: SMD Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Dimensions: 3.3x3.3mm Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Technology: NexFET™ Case: VSONP8 Drain-source voltage: 30V Drain current: 35A On-state resistance: 5.3mΩ Type of transistor: N-MOSFET |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17577Q3AT | Hersteller : Texas Instruments |
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auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17577Q3AT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V |
auf Bestellung 3858 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17577Q3AT | Hersteller : Texas Instruments |
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auf Bestellung 1750 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17577Q3AT | Hersteller : Texas Instruments Incorporated (TI) |
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auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17577Q3AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD17577Q3AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |