CSD18536KCS Texas Instruments
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Description: MOSFET N-CH 60V 200A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V
auf Bestellung 954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
134+ | 3.69 EUR |
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Technische Details CSD18536KCS Texas Instruments
Description: MOSFET N-CH 60V 200A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V.
Weitere Produktangebote CSD18536KCS nach Preis ab 3.73 EUR bis 6.92 EUR
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CSD18536KCS | Hersteller : Texas Instruments |
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auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18536KCS | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3 Polarisation: unipolar Power dissipation: 375W Case: TO220-3 Kind of package: tube Mounting: THT Gate charge: 83nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 200A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 164 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18536KCS | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3 Polarisation: unipolar Power dissipation: 375W Case: TO220-3 Kind of package: tube Mounting: THT Gate charge: 83nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 200A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET |
auf Bestellung 164 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18536KCS | Hersteller : Texas Instruments |
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auf Bestellung 2511 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KCS | Hersteller : Texas Instruments |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V |
auf Bestellung 368 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KCS | Hersteller : Texas Instruments |
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auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18536KCS Produktcode: 196562 |
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CSD18536KCS | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18536KCS | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18536KCS | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |