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CSD18542KTTT

CSD18542KTTT TEXAS INSTRUMENTS

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1843 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.33 EUR
24+ 2.99 EUR
32+ 2.3 EUR
33+ 2.17 EUR
Mindestbestellmenge: 22
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Technische Details CSD18542KTTT TEXAS INSTRUMENTS

Description: MOSFET N-CH 60V 200A/170A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V.

Weitere Produktangebote CSD18542KTTT nach Preis ab 2.13 EUR bis 4.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
CSD18542KTTT CSD18542KTTT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1843 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.33 EUR
24+ 2.99 EUR
32+ 2.3 EUR
33+ 2.17 EUR
Mindestbestellmenge: 22
CSD18542KTTT CSD18542KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Description: MOSFET N-CH 60V 200A/170A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+3.83 EUR
100+ 3.15 EUR
Mindestbestellmenge: 50
CSD18542KTTT CSD18542KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt MOSFETs 60V N-Channel NexFET Pwr MOSFET
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.73 EUR
10+ 3.94 EUR
100+ 3.13 EUR
250+ 2.9 EUR
500+ 2.62 EUR
1000+ 2.24 EUR
2500+ 2.13 EUR
CSD18542KTTT CSD18542KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Description: MOSFET N-CH 60V 200A/170A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.75 EUR
10+ 3.95 EUR
Mindestbestellmenge: 4
CSD18542KTTT CSD18542KTTT Hersteller : Texas Instruments slps590.pdf Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) DDPAK T/R
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)