![CSD18542KTTT CSD18542KTTT](https://ce8dc832c.cloudimg.io/v7/_cdn_/82/FC/00/00/1/53032_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=c8062f37b7a85af3240469ff81f8399c8a2cc901)
CSD18542KTTT TEXAS INSTRUMENTS
![suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt](/images/adobe-acrobat.png)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1843 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
22+ | 3.33 EUR |
24+ | 2.99 EUR |
32+ | 2.3 EUR |
33+ | 2.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18542KTTT TEXAS INSTRUMENTS
Description: MOSFET N-CH 60V 200A/170A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V.
Weitere Produktangebote CSD18542KTTT nach Preis ab 2.13 EUR bis 4.75 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
CSD18542KTTT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Pulsed drain current: 400A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1843 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
CSD18542KTTT | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
CSD18542KTTT | Hersteller : Texas Instruments |
![]() |
auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
CSD18542KTTT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V |
auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
CSD18542KTTT | Hersteller : Texas Instruments |
![]() |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |