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PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Case: SOT23
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1085+ 0.066 EUR
1147+ 0.062 EUR
Mindestbestellmenge: 218
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Case: SOT23
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1085+ 0.066 EUR
1147+ 0.062 EUR
9000+ 0.06 EUR
Mindestbestellmenge: 218
PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Case: SOT23
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
997+ 0.072 EUR
1053+ 0.068 EUR
Mindestbestellmenge: 200
PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Case: SOT23
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
997+ 0.072 EUR
1053+ 0.068 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 200
PJA3439-AU_R1_000A1 PJA3439-AU_R1_000A1 PanJit Semiconductor PJA3439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: -1A
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.3A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
auf Bestellung 1855 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
997+ 0.072 EUR
1053+ 0.068 EUR
Mindestbestellmenge: 200
PJA3439-AU_R1_000A1 PJA3439-AU_R1_000A1 PanJit Semiconductor PJA3439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: -1A
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.3A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1855 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
997+ 0.072 EUR
1053+ 0.068 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 200
PJA3440-AU_R1_000A1 PJA3440-AU_R1_000A1 PanJit Semiconductor PJA3440-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 17.2A
Type of transistor: N-MOSFET
Drain current: 4.3A
Drain-source voltage: 40V
Power dissipation: 1.25W
auf Bestellung 2710 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
495+ 0.15 EUR
560+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 365
PJA3440-AU_R1_000A1 PJA3440-AU_R1_000A1 PanJit Semiconductor PJA3440-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 17.2A
Type of transistor: N-MOSFET
Drain current: 4.3A
Drain-source voltage: 40V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2710 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
495+ 0.15 EUR
560+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 365
PJA3441-AU_R1_000A1 PJA3441-AU_R1_000A1 PanJit Semiconductor PJA3441-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -40V
Power dissipation: 1.25W
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
330+0.21 EUR
Mindestbestellmenge: 330
PJA3441-AU_R1_000A1 PJA3441-AU_R1_000A1 PanJit Semiconductor PJA3441-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -40V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 330 Stücke:
Lieferzeit 7-14 Tag (e)
330+0.21 EUR
460+ 0.16 EUR
9000+ 0.092 EUR
Mindestbestellmenge: 330
PJA3441_R1_00501 PJA3441_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -40V
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
143+0.5 EUR
203+ 0.35 EUR
262+ 0.27 EUR
439+ 0.16 EUR
782+ 0.092 EUR
820+ 0.087 EUR
Mindestbestellmenge: 143
PJA3441_R1_00501 PJA3441_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -40V
Power dissipation: 1.25W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
203+ 0.35 EUR
262+ 0.27 EUR
439+ 0.16 EUR
782+ 0.092 EUR
820+ 0.087 EUR
Mindestbestellmenge: 143
PJA3460-AU_R1_000A1 PJA3460-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Pulsed drain current: 10A
Type of transistor: N-MOSFET
Drain current: 2.5A
Drain-source voltage: 60V
Power dissipation: 1.25W
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
455+ 0.16 EUR
515+ 0.14 EUR
620+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 365
PJA3460-AU_R1_000A1 PJA3460-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Pulsed drain current: 10A
Type of transistor: N-MOSFET
Drain current: 2.5A
Drain-source voltage: 60V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2685 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
455+ 0.16 EUR
515+ 0.14 EUR
620+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 365
PJA3460_R1_00001 PJA3460_R1_00001 PanJit Semiconductor PJA3460.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Pulsed drain current: 10A
Type of transistor: N-MOSFET
Drain current: 2.5A
Drain-source voltage: 60V
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5900 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
191+ 0.37 EUR
272+ 0.26 EUR
432+ 0.17 EUR
658+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 132
PJA3460_R1_00001 PJA3460_R1_00001 PanJit Semiconductor PJA3460.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Pulsed drain current: 10A
Type of transistor: N-MOSFET
Drain current: 2.5A
Drain-source voltage: 60V
Power dissipation: 1.25W
auf Bestellung 5900 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
191+ 0.37 EUR
272+ 0.26 EUR
432+ 0.17 EUR
658+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 132
PJA3461-AU_R1_000A1 PJA3461-AU_R1_000A1 PanJit Semiconductor PJA3461-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.6A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Pulsed drain current: -7.6A
Type of transistor: P-MOSFET
Drain current: -1.9A
Drain-source voltage: -60V
Power dissipation: 1.25W
Produkt ist nicht verfügbar
PJA3461-AU_R1_000A1 PJA3461-AU_R1_000A1 PanJit Semiconductor PJA3461-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.6A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Pulsed drain current: -7.6A
Type of transistor: P-MOSFET
Drain current: -1.9A
Drain-source voltage: -60V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJA3461_R1_00001 PanJit Semiconductor PJA3461.pdf PJA3461-R1 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3463_R1_00001 PJA3463_R1_00001 PanJit Semiconductor PJA3463.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; Idm: -10A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -10A
Type of transistor: P-MOSFET
Drain current: -2.5A
Drain-source voltage: -60V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2700 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
455+ 0.16 EUR
515+ 0.14 EUR
545+ 0.13 EUR
575+ 0.12 EUR
Mindestbestellmenge: 365
PJA3463_R1_00001 PJA3463_R1_00001 PanJit Semiconductor PJA3463.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; Idm: -10A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -10A
Type of transistor: P-MOSFET
Drain current: -2.5A
Drain-source voltage: -60V
Power dissipation: 1.25W
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
455+ 0.16 EUR
515+ 0.14 EUR
545+ 0.13 EUR
575+ 0.12 EUR
Mindestbestellmenge: 365
PJA3471_R1_00501 PJA3471_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -900mA
Pulsed drain current: -3.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4105 Stücke:
Lieferzeit 7-14 Tag (e)
370+0.19 EUR
465+ 0.15 EUR
525+ 0.14 EUR
565+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 370
PJA3471_R1_00501 PJA3471_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -900mA
Pulsed drain current: -3.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 4105 Stücke:
Lieferzeit 14-21 Tag (e)
370+0.19 EUR
465+ 0.15 EUR
525+ 0.14 EUR
565+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 370
PJC138K-AU_R1_000A1 PJC138K-AU_R1_000A1 PanJit Semiconductor PJC138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.36A
Drain-source voltage: 50V
Power dissipation: 236mW
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.099 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1200+ 0.06 EUR
1270+ 0.056 EUR
Mindestbestellmenge: 725
PJC138K-AU_R1_000A1 PJC138K-AU_R1_000A1 PanJit Semiconductor PJC138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.36A
Drain-source voltage: 50V
Power dissipation: 236mW
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
725+0.099 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1200+ 0.06 EUR
1270+ 0.056 EUR
9000+ 0.054 EUR
Mindestbestellmenge: 725
PJC7400_R1_00001 PJC7400_R1_00001 PanJit Semiconductor PJC7400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Pulsed drain current: 7.6A
Type of transistor: N-MOSFET
Drain current: 1.9A
Drain-source voltage: 30V
Power dissipation: 0.35W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PJC7400_R1_00001 PJC7400_R1_00001 PanJit Semiconductor PJC7400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Pulsed drain current: 7.6A
Type of transistor: N-MOSFET
Drain current: 1.9A
Drain-source voltage: 30V
Power dissipation: 0.35W
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJC7401_R1_00001 PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Pulsed drain current: -6A
Type of transistor: P-MOSFET
Drain current: -1.5A
Drain-source voltage: -30V
Power dissipation: 0.35W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2390 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PJC7401_R1_00001 PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Pulsed drain current: -6A
Type of transistor: P-MOSFET
Drain current: -1.5A
Drain-source voltage: -30V
Power dissipation: 0.35W
auf Bestellung 2390 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJC7404_R1_00001 PJC7404_R1_00001 PanJit Semiconductor PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1.6nC
Case: SOT323
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Polarisation: unipolar
Power dissipation: 0.35W
Type of transistor: N-MOSFET
On-state resistance: 0.4Ω
Drain current: 1A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
234+ 0.31 EUR
334+ 0.21 EUR
758+ 0.094 EUR
807+ 0.089 EUR
Mindestbestellmenge: 179
PJC7404_R1_00001 PJC7404_R1_00001 PanJit Semiconductor PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1.6nC
Case: SOT323
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Polarisation: unipolar
Power dissipation: 0.35W
Type of transistor: N-MOSFET
On-state resistance: 0.4Ω
Drain current: 1A
Drain-source voltage: 20V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
234+ 0.31 EUR
334+ 0.21 EUR
758+ 0.094 EUR
807+ 0.089 EUR
Mindestbestellmenge: 179
PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Drain-source voltage: -20V
Drain current: -1.3A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8835 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
785+ 0.092 EUR
835+ 0.086 EUR
9000+ 0.082 EUR
Mindestbestellmenge: 365
PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Drain-source voltage: -20V
Drain current: -1.3A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Case: SOT323
auf Bestellung 8835 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
785+ 0.092 EUR
835+ 0.086 EUR
Mindestbestellmenge: 365
PJC7428_R1_00001 PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJC7428_R1_00001 PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJC7439-AU_R1_000A1 PJC7439-AU_R1_000A1 PanJit Semiconductor PJC7439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1380+ 0.052 EUR
1455+ 0.049 EUR
Mindestbestellmenge: 715
PJC7439-AU_R1_000A1 PJC7439-AU_R1_000A1 PanJit Semiconductor PJC7439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1380+ 0.052 EUR
1455+ 0.049 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 715
PJC7476_R1_00001 PanJit Semiconductor PJC7476.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJC7476_R1_00001 PanJit Semiconductor PJC7476.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD15P06A-AU_L2_000A1 PanJit Semiconductor PJD15P06A-AU_SERIES.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD15P06A-AU_L2_000A1 PanJit Semiconductor PJD15P06A-AU_SERIES.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD16P06A_L2_00001 PJD16P06A_L2_00001 PanJit Semiconductor PJD16P06A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12000 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.72 EUR
113+ 0.64 EUR
145+ 0.5 EUR
205+ 0.35 EUR
217+ 0.33 EUR
3000+ 0.32 EUR
Mindestbestellmenge: 100
PJD16P06A_L2_00001 PJD16P06A_L2_00001 PanJit Semiconductor PJD16P06A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
113+ 0.64 EUR
145+ 0.5 EUR
205+ 0.35 EUR
217+ 0.33 EUR
3000+ 0.32 EUR
Mindestbestellmenge: 100
PJD18N20_L2_00001 PJD18N20_L2_00001 PanJit Semiconductor PJx18N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD18N20_L2_00001 PJD18N20_L2_00001 PanJit Semiconductor PJx18N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD25N03_L2_00001 PanJit Semiconductor PJD25N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
155+ 0.46 EUR
253+ 0.28 EUR
325+ 0.22 EUR
345+ 0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 70
PJD25N03_L2_00001 PanJit Semiconductor PJD25N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
155+ 0.46 EUR
253+ 0.28 EUR
325+ 0.22 EUR
345+ 0.21 EUR
Mindestbestellmenge: 70
PJD25N04V-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD25N04V-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2756 Stücke:
Lieferzeit 7-14 Tag (e)
107+0.67 EUR
148+ 0.49 EUR
291+ 0.25 EUR
307+ 0.23 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 107
PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2756 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
148+ 0.49 EUR
291+ 0.25 EUR
307+ 0.23 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 107
PJD35P03_L2_00001 PJD35P03_L2_00001 PanJit Semiconductor PJD35P03.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 35W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.97 EUR
150+ 0.48 EUR
246+ 0.29 EUR
302+ 0.24 EUR
319+ 0.22 EUR
Mindestbestellmenge: 74
PJD35P03_L2_00001 PJD35P03_L2_00001 PanJit Semiconductor PJD35P03.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 35W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
150+ 0.48 EUR
246+ 0.29 EUR
302+ 0.24 EUR
319+ 0.22 EUR
Mindestbestellmenge: 74
PJD40P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD40P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD45N06A_L2_00001 PanJit Semiconductor PJx45N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.04 EUR
148+ 0.48 EUR
164+ 0.44 EUR
212+ 0.34 EUR
225+ 0.32 EUR
6000+ 0.31 EUR
Mindestbestellmenge: 69
PJD45N06A_L2_00001 PanJit Semiconductor PJx45N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
148+ 0.48 EUR
164+ 0.44 EUR
212+ 0.34 EUR
225+ 0.32 EUR
Mindestbestellmenge: 69
PJD45P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD45P03E-AU_L2_006A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD45P04_L2_00001 PanJit Semiconductor PJD45P04.pdf PJD45P04-L2 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Case: SOT23
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1085+ 0.066 EUR
1147+ 0.062 EUR
Mindestbestellmenge: 218
PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Case: SOT23
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1085+ 0.066 EUR
1147+ 0.062 EUR
9000+ 0.06 EUR
Mindestbestellmenge: 218
PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Case: SOT23
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
997+ 0.072 EUR
1053+ 0.068 EUR
Mindestbestellmenge: 200
PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Case: SOT23
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
997+ 0.072 EUR
1053+ 0.068 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 200
PJA3439-AU_R1_000A1 PJA3439-AU.pdf
PJA3439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: -1A
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.3A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
auf Bestellung 1855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
997+ 0.072 EUR
1053+ 0.068 EUR
Mindestbestellmenge: 200
PJA3439-AU_R1_000A1 PJA3439-AU.pdf
PJA3439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Gate-source voltage: ±20V
Pulsed drain current: -1A
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.3A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1855 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
997+ 0.072 EUR
1053+ 0.068 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 200
PJA3440-AU_R1_000A1 PJA3440-AU.pdf
PJA3440-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 17.2A
Type of transistor: N-MOSFET
Drain current: 4.3A
Drain-source voltage: 40V
Power dissipation: 1.25W
auf Bestellung 2710 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
495+ 0.15 EUR
560+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 365
PJA3440-AU_R1_000A1 PJA3440-AU.pdf
PJA3440-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.3A; Idm: 17.2A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Pulsed drain current: 17.2A
Type of transistor: N-MOSFET
Drain current: 4.3A
Drain-source voltage: 40V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2710 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
495+ 0.15 EUR
560+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 365
PJA3441-AU_R1_000A1 PJA3441-AU.pdf
PJA3441-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -40V
Power dissipation: 1.25W
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
330+0.21 EUR
Mindestbestellmenge: 330
PJA3441-AU_R1_000A1 PJA3441-AU.pdf
PJA3441-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -40V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 330 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
330+0.21 EUR
460+ 0.16 EUR
9000+ 0.092 EUR
Mindestbestellmenge: 330
PJA3441_R1_00501
PJA3441_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -40V
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
203+ 0.35 EUR
262+ 0.27 EUR
439+ 0.16 EUR
782+ 0.092 EUR
820+ 0.087 EUR
Mindestbestellmenge: 143
PJA3441_R1_00501
PJA3441_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -40V
Power dissipation: 1.25W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
203+ 0.35 EUR
262+ 0.27 EUR
439+ 0.16 EUR
782+ 0.092 EUR
820+ 0.087 EUR
Mindestbestellmenge: 143
PJA3460-AU_R1_000A1
PJA3460-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Pulsed drain current: 10A
Type of transistor: N-MOSFET
Drain current: 2.5A
Drain-source voltage: 60V
Power dissipation: 1.25W
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
455+ 0.16 EUR
515+ 0.14 EUR
620+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 365
PJA3460-AU_R1_000A1
PJA3460-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Pulsed drain current: 10A
Type of transistor: N-MOSFET
Drain current: 2.5A
Drain-source voltage: 60V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2685 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
455+ 0.16 EUR
515+ 0.14 EUR
620+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 365
PJA3460_R1_00001 PJA3460.pdf
PJA3460_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Pulsed drain current: 10A
Type of transistor: N-MOSFET
Drain current: 2.5A
Drain-source voltage: 60V
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5900 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
191+ 0.37 EUR
272+ 0.26 EUR
432+ 0.17 EUR
658+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 132
PJA3460_R1_00001 PJA3460.pdf
PJA3460_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Pulsed drain current: 10A
Type of transistor: N-MOSFET
Drain current: 2.5A
Drain-source voltage: 60V
Power dissipation: 1.25W
auf Bestellung 5900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
191+ 0.37 EUR
272+ 0.26 EUR
432+ 0.17 EUR
658+ 0.11 EUR
695+ 0.1 EUR
Mindestbestellmenge: 132
PJA3461-AU_R1_000A1 PJA3461-AU.pdf
PJA3461-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.6A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Pulsed drain current: -7.6A
Type of transistor: P-MOSFET
Drain current: -1.9A
Drain-source voltage: -60V
Power dissipation: 1.25W
Produkt ist nicht verfügbar
PJA3461-AU_R1_000A1 PJA3461-AU.pdf
PJA3461-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.6A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Pulsed drain current: -7.6A
Type of transistor: P-MOSFET
Drain current: -1.9A
Drain-source voltage: -60V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJA3461_R1_00001 PJA3461.pdf
Hersteller: PanJit Semiconductor
PJA3461-R1 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3463_R1_00001 PJA3463.pdf
PJA3463_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; Idm: -10A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -10A
Type of transistor: P-MOSFET
Drain current: -2.5A
Drain-source voltage: -60V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2700 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
455+ 0.16 EUR
515+ 0.14 EUR
545+ 0.13 EUR
575+ 0.12 EUR
Mindestbestellmenge: 365
PJA3463_R1_00001 PJA3463.pdf
PJA3463_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; Idm: -10A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -10A
Type of transistor: P-MOSFET
Drain current: -2.5A
Drain-source voltage: -60V
Power dissipation: 1.25W
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
455+ 0.16 EUR
515+ 0.14 EUR
545+ 0.13 EUR
575+ 0.12 EUR
Mindestbestellmenge: 365
PJA3471_R1_00501
PJA3471_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -900mA
Pulsed drain current: -3.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4105 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
465+ 0.15 EUR
525+ 0.14 EUR
565+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 370
PJA3471_R1_00501
PJA3471_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -900mA
Pulsed drain current: -3.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 4105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
465+ 0.15 EUR
525+ 0.14 EUR
565+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 370
PJC138K-AU_R1_000A1 PJC138K-AU.pdf
PJC138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.36A
Drain-source voltage: 50V
Power dissipation: 236mW
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1200+ 0.06 EUR
1270+ 0.056 EUR
Mindestbestellmenge: 725
PJC138K-AU_R1_000A1 PJC138K-AU.pdf
PJC138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.36A
Drain-source voltage: 50V
Power dissipation: 236mW
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
895+ 0.08 EUR
995+ 0.072 EUR
1200+ 0.06 EUR
1270+ 0.056 EUR
9000+ 0.054 EUR
Mindestbestellmenge: 725
PJC7400_R1_00001 PJC7400.pdf
PJC7400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Pulsed drain current: 7.6A
Type of transistor: N-MOSFET
Drain current: 1.9A
Drain-source voltage: 30V
Power dissipation: 0.35W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PJC7400_R1_00001 PJC7400.pdf
PJC7400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Pulsed drain current: 7.6A
Type of transistor: N-MOSFET
Drain current: 1.9A
Drain-source voltage: 30V
Power dissipation: 0.35W
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJC7401_R1_00001 PJC7401.pdf
PJC7401_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Pulsed drain current: -6A
Type of transistor: P-MOSFET
Drain current: -1.5A
Drain-source voltage: -30V
Power dissipation: 0.35W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2390 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PJC7401_R1_00001 PJC7401.pdf
PJC7401_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT323
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Pulsed drain current: -6A
Type of transistor: P-MOSFET
Drain current: -1.5A
Drain-source voltage: -30V
Power dissipation: 0.35W
auf Bestellung 2390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1.6nC
Case: SOT323
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Polarisation: unipolar
Power dissipation: 0.35W
Type of transistor: N-MOSFET
On-state resistance: 0.4Ω
Drain current: 1A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
234+ 0.31 EUR
334+ 0.21 EUR
758+ 0.094 EUR
807+ 0.089 EUR
Mindestbestellmenge: 179
PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1.6nC
Case: SOT323
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Polarisation: unipolar
Power dissipation: 0.35W
Type of transistor: N-MOSFET
On-state resistance: 0.4Ω
Drain current: 1A
Drain-source voltage: 20V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
234+ 0.31 EUR
334+ 0.21 EUR
758+ 0.094 EUR
807+ 0.089 EUR
Mindestbestellmenge: 179
PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Drain-source voltage: -20V
Drain current: -1.3A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8835 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
785+ 0.092 EUR
835+ 0.086 EUR
9000+ 0.082 EUR
Mindestbestellmenge: 365
PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Drain-source voltage: -20V
Drain current: -1.3A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Case: SOT323
auf Bestellung 8835 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
785+ 0.092 EUR
835+ 0.086 EUR
Mindestbestellmenge: 365
PJC7428_R1_00001 PJC7428.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJC7428_R1_00001 PJC7428.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJC7439-AU_R1_000A1 PJC7439-AU.pdf
PJC7439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1380+ 0.052 EUR
1455+ 0.049 EUR
Mindestbestellmenge: 715
PJC7439-AU_R1_000A1 PJC7439-AU.pdf
PJC7439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1380+ 0.052 EUR
1455+ 0.049 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 715
PJC7476_R1_00001 PJC7476.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJC7476_R1_00001 PJC7476.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD15P06A-AU_L2_000A1 PJD15P06A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD15P06A-AU_L2_000A1 PJD15P06A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD16P06A_L2_00001 PJD16P06A.pdf
PJD16P06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
100+0.72 EUR
113+ 0.64 EUR
145+ 0.5 EUR
205+ 0.35 EUR
217+ 0.33 EUR
3000+ 0.32 EUR
Mindestbestellmenge: 100
PJD16P06A_L2_00001 PJD16P06A.pdf
PJD16P06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
100+0.72 EUR
113+ 0.64 EUR
145+ 0.5 EUR
205+ 0.35 EUR
217+ 0.33 EUR
3000+ 0.32 EUR
Mindestbestellmenge: 100
PJD18N20_L2_00001 PJx18N20.pdf
PJD18N20_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD18N20_L2_00001 PJx18N20.pdf
PJD18N20_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD25N03_L2_00001 PJD25N03.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
155+ 0.46 EUR
253+ 0.28 EUR
325+ 0.22 EUR
345+ 0.21 EUR
6000+ 0.2 EUR
Mindestbestellmenge: 70
PJD25N03_L2_00001 PJD25N03.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
155+ 0.46 EUR
253+ 0.28 EUR
325+ 0.22 EUR
345+ 0.21 EUR
Mindestbestellmenge: 70
PJD25N04V-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD25N04V-AU_L2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2756 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
107+0.67 EUR
148+ 0.49 EUR
291+ 0.25 EUR
307+ 0.23 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 107
PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2756 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
107+0.67 EUR
148+ 0.49 EUR
291+ 0.25 EUR
307+ 0.23 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 107
PJD35P03_L2_00001 PJD35P03.pdf
PJD35P03_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 35W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
150+ 0.48 EUR
246+ 0.29 EUR
302+ 0.24 EUR
319+ 0.22 EUR
Mindestbestellmenge: 74
PJD35P03_L2_00001 PJD35P03.pdf
PJD35P03_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 35W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
150+ 0.48 EUR
246+ 0.29 EUR
302+ 0.24 EUR
319+ 0.22 EUR
Mindestbestellmenge: 74
PJD40P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD40P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD45N06A_L2_00001 PJx45N06A.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
148+ 0.48 EUR
164+ 0.44 EUR
212+ 0.34 EUR
225+ 0.32 EUR
6000+ 0.31 EUR
Mindestbestellmenge: 69
PJD45N06A_L2_00001 PJx45N06A.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
148+ 0.48 EUR
164+ 0.44 EUR
212+ 0.34 EUR
225+ 0.32 EUR
Mindestbestellmenge: 69
PJD45P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJD45P03E-AU_L2_006A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJD45P04_L2_00001 PJD45P04.pdf
Hersteller: PanJit Semiconductor
PJD45P04-L2 SMD P channel transistors
Produkt ist nicht verfügbar
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