Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1508) > Seite 14 nach 26
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 98W Kind of package: tube Technology: SiC Max. load current: 40A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 640A Leakage current: 70µA Anzahl je Verpackung: 1 Stücke |
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 98W Kind of package: tube Technology: SiC Max. load current: 40A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 640A Leakage current: 70µA |
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| PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 138W Kind of package: tube Technology: SiC Max. load current: 48A Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 704A Leakage current: 0.1mA Anzahl je Verpackung: 1 Stücke |
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| PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 138W Kind of package: tube Technology: SiC Max. load current: 48A Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 704A Leakage current: 0.1mA |
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| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 90W Kind of package: tube Technology: SiC Max. load current: 28A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 384A Leakage current: 0.1mA Anzahl je Verpackung: 1 Stücke |
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| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 90W Kind of package: tube Technology: SiC Max. load current: 28A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 384A Leakage current: 0.1mA |
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PCDH30120CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 230.8W; TO247-3 Kind of package: tube Max. forward impulse current: 720A Leakage current: 140µA Power dissipation: 230.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 72A Max. forward voltage: 2V Load current: 15A x2 Semiconductor structure: common cathode; double Anzahl je Verpackung: 1 Stücke |
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PCDH30120CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 230.8W; TO247-3 Kind of package: tube Max. forward impulse current: 720A Leakage current: 140µA Power dissipation: 230.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 72A Max. forward voltage: 2V Load current: 15A x2 Semiconductor structure: common cathode; double |
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| PCDH30120CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 332W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Max. load current: 92A Power dissipation: 332W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 1.2kA Max. forward voltage: 1.9V Leakage current: 0.1mA Anzahl je Verpackung: 1 Stücke |
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| PCDH30120CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 332W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Max. load current: 92A Power dissipation: 332W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 1.2kA Max. forward voltage: 1.9V Leakage current: 0.1mA |
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| PCDH3065CCG1_T0_00601 | PanJit Semiconductor |
PCDH3065CCG1-T0 THT Schottky diodes |
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| PCDH3065CCGB_T0_00601 | PanJit Semiconductor | PCDH3065CCGB-T0 THT Schottky diodes |
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| PCDH3065CCGC_T0_00601 | PanJit Semiconductor | PCDH3065CCGC-T0 THT Schottky diodes |
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| PCDH40120CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 294.1W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 108A Power dissipation: 294.1W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 960A Max. forward voltage: 2V Leakage current: 180µA Anzahl je Verpackung: 1 Stücke |
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| PCDH40120CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 294.1W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 108A Power dissipation: 294.1W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 960A Max. forward voltage: 2V Leakage current: 180µA |
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| PCDH40120CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 443W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 100A Power dissipation: 443W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 1.36kA Max. forward voltage: 1.9V Leakage current: 0.1mA Anzahl je Verpackung: 1 Stücke |
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| PCDH40120CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 443W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 100A Power dissipation: 443W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 1.36kA Max. forward voltage: 1.9V Leakage current: 0.1mA |
Produkt ist nicht verfügbar |
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| PCDH4065CCG1_T0_00601 | PanJit Semiconductor |
PCDH4065CCG1-T0 THT Schottky diodes |
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| PCDH4065CCGB_T0_00601 | PanJit Semiconductor | PCDH4065CCGB-T0 THT Schottky diodes |
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| PCDH4065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 166W; TO247-3 Type of diode: Schottky rectifying Power dissipation: 166W Mounting: THT Kind of package: tube Max. forward voltage: 1.8V Case: TO247-3 Max. load current: 60A Semiconductor structure: common cathode; double Leakage current: 0.1mA Technology: SiC Max. off-state voltage: 650V Load current: 20A x2 Max. forward impulse current: 729A Anzahl je Verpackung: 1 Stücke |
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| PCDH4065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 166W; TO247-3 Type of diode: Schottky rectifying Power dissipation: 166W Mounting: THT Kind of package: tube Max. forward voltage: 1.8V Case: TO247-3 Max. load current: 60A Semiconductor structure: common cathode; double Leakage current: 0.1mA Technology: SiC Max. off-state voltage: 650V Load current: 20A x2 Max. forward impulse current: 729A |
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PCDP0465G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 56W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA Anzahl je Verpackung: 1 Stücke |
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PCDP0465G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 56W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA |
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PCDP05120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC Technology: SiC Case: TO220AC Mounting: THT Kind of package: tube Power dissipation: 129.3W Max. off-state voltage: 1.2kV Max. load current: 40A Max. forward voltage: 2V Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 520A Leakage current: 50µA Type of diode: Schottky rectifying Anzahl je Verpackung: 1 Stücke |
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PCDP05120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC Technology: SiC Case: TO220AC Mounting: THT Kind of package: tube Power dissipation: 129.3W Max. off-state voltage: 1.2kV Max. load current: 40A Max. forward voltage: 2V Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 520A Leakage current: 50µA Type of diode: Schottky rectifying |
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| PCDP0665G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO220AC Kind of package: tube Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 57.7W Anzahl je Verpackung: 1 Stücke |
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| PCDP0665G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO220AC Kind of package: tube Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 57.7W |
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| PCDP08120G1_T0_00001 | PanJit Semiconductor |
PCDP08120G1-T0 THT Schottky diodes |
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| PCDP0865G1_T0_00001 | PanJit Semiconductor |
PCDP0865G1-T0 THT Schottky diodes |
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| PCDP10120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC Mounting: THT Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 640A Leakage current: 0.1mA Power dissipation: 151.5W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 76A Anzahl je Verpackung: 1 Stücke |
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| PCDP10120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC Mounting: THT Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 640A Leakage current: 0.1mA Power dissipation: 151.5W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 76A |
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PCDP1065G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC Power dissipation: 83.3W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA Anzahl je Verpackung: 1 Stücke |
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PCDP1065G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC Power dissipation: 83.3W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA |
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| PCDP1265G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC Power dissipation: 102.7W Technology: SiC Max. off-state voltage: 650V Load current: 12A Max. load current: 52A Kind of package: tube Semiconductor structure: single diode Leakage current: 80µA Case: TO220AC Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 640A Max. forward voltage: 1.8V Anzahl je Verpackung: 1 Stücke |
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| PCDP1265G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC Power dissipation: 102.7W Technology: SiC Max. off-state voltage: 650V Load current: 12A Max. load current: 52A Kind of package: tube Semiconductor structure: single diode Leakage current: 80µA Case: TO220AC Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 640A Max. forward voltage: 1.8V |
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 120A Max. forward voltage: 2V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W Anzahl je Verpackung: 1 Stücke |
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 120A Max. forward voltage: 2V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W |
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| PCDP1665G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Max. load current: 72A Power dissipation: 136.4W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 720A Max. forward voltage: 1.8V Leakage current: 0.1mA Anzahl je Verpackung: 1 Stücke |
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| PCDP1665G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Max. load current: 72A Power dissipation: 136.4W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 720A Max. forward voltage: 1.8V Leakage current: 0.1mA |
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PCDP20120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC Technology: SiC Power dissipation: 267.9W Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. load current: 152A Max. forward voltage: 2V Load current: 20A Max. forward impulse current: 960A Leakage current: 180µA Anzahl je Verpackung: 1 Stücke |
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PCDP20120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC Technology: SiC Power dissipation: 267.9W Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. load current: 152A Max. forward voltage: 2V Load current: 20A Max. forward impulse current: 960A Leakage current: 180µA |
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| PCDP2065G1_T0_00001 | PanJit Semiconductor |
PCDP2065G1-T0 THT Schottky diodes |
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PE1403M1Q_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape Mounting: SMD Case: DFN1006-2 Capacitance: 0.4pF Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Max. forward impulse current: 16A Breakdown voltage: 4V Leakage current: 50nA Semiconductor structure: unidirectional Max. off-state voltage: 3.3V Anzahl je Verpackung: 5 Stücke |
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| PE1403M1Q_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape Mounting: SMD Case: DFN1006-2 Capacitance: 0.4pF Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Max. forward impulse current: 16A Breakdown voltage: 4V Leakage current: 50nA Semiconductor structure: unidirectional Max. off-state voltage: 3.3V |
Produkt ist nicht verfügbar |
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape Mounting: SMD Case: SOT23-6 Breakdown voltage: 6...9V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Capacitance: 0.8pF Features of semiconductor devices: ESD protection Max. off-state voltage: 5V Semiconductor structure: unidirectional Max. forward impulse current: 5A Anzahl je Verpackung: 5 Stücke |
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape Mounting: SMD Case: SOT23-6 Breakdown voltage: 6...9V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Capacitance: 0.8pF Features of semiconductor devices: ESD protection Max. off-state voltage: 5V Semiconductor structure: unidirectional Max. forward impulse current: 5A |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape Mounting: SMD Case: SOT363 Breakdown voltage: 6...9V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Capacitance: 0.8pF Features of semiconductor devices: ESD protection Max. off-state voltage: 5V Semiconductor structure: unidirectional Max. forward impulse current: 5A Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2975 Stücke: Lieferzeit 7-14 Tag (e) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape Mounting: SMD Case: SOT363 Breakdown voltage: 6...9V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Capacitance: 0.8pF Features of semiconductor devices: ESD protection Max. off-state voltage: 5V Semiconductor structure: unidirectional Max. forward impulse current: 5A |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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| PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOD523 Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: ESD protection Max. off-state voltage: 5V Capacitance: 120pF Breakdown voltage: 6...7.5V Max. forward impulse current: 13A Anzahl je Verpackung: 25 Stücke |
auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOD523 Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: ESD protection Max. off-state voltage: 5V Capacitance: 120pF Breakdown voltage: 6...7.5V Max. forward impulse current: 13A |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 0.19pF Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 0.19pF |
Produkt ist nicht verfügbar |
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape Capacitance: 0.6pF Mounting: SMD Case: DFN1006-2 Kind of package: reel; tape Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Breakdown voltage: 6.8...11.2V Leakage current: 75nA Type of diode: TVS Features of semiconductor devices: ESD protection Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape Capacitance: 0.6pF Mounting: SMD Case: DFN1006-2 Kind of package: reel; tape Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Breakdown voltage: 6.8...11.2V Leakage current: 75nA Type of diode: TVS Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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| PEC3202M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Capacitance: 20pF Max. off-state voltage: 2.5V Semiconductor structure: bidirectional Breakdown voltage: 2.6...4V Leakage current: 0.5µA Case: DFN1006-2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PEC3202M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Capacitance: 20pF Max. off-state voltage: 2.5V Semiconductor structure: bidirectional Breakdown voltage: 2.6...4V Leakage current: 0.5µA Case: DFN1006-2 |
Produkt ist nicht verfügbar |
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| PEC3205M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Capacitance: 20pF Max. off-state voltage: 5V Semiconductor structure: bidirectional Breakdown voltage: 5.5...8V Leakage current: 0.5µA Case: DFN1006-2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PEC3205M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Capacitance: 20pF Max. off-state voltage: 5V Semiconductor structure: bidirectional Breakdown voltage: 5.5...8V Leakage current: 0.5µA Case: DFN1006-2 |
Produkt ist nicht verfügbar |
| PCDH2065CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 98W
Kind of package: tube
Technology: SiC
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 640A
Leakage current: 70µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 98W
Kind of package: tube
Technology: SiC
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 640A
Leakage current: 70µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDH2065CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 98W
Kind of package: tube
Technology: SiC
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 640A
Leakage current: 70µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 98W
Kind of package: tube
Technology: SiC
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 640A
Leakage current: 70µA
Produkt ist nicht verfügbar
| PCDH2065CCGB_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 138W
Kind of package: tube
Technology: SiC
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 138W
Kind of package: tube
Technology: SiC
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDH2065CCGB_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 138W
Kind of package: tube
Technology: SiC
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 138W
Kind of package: tube
Technology: SiC
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Produkt ist nicht verfügbar
| PCDH2065CCGC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 90W
Kind of package: tube
Technology: SiC
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 90W
Kind of package: tube
Technology: SiC
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDH2065CCGC_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 90W
Kind of package: tube
Technology: SiC
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 90W
Kind of package: tube
Technology: SiC
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Produkt ist nicht verfügbar
| PCDH30120CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 230.8W; TO247-3
Kind of package: tube
Max. forward impulse current: 720A
Leakage current: 140µA
Power dissipation: 230.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 15A x2
Semiconductor structure: common cathode; double
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 230.8W; TO247-3
Kind of package: tube
Max. forward impulse current: 720A
Leakage current: 140µA
Power dissipation: 230.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 15A x2
Semiconductor structure: common cathode; double
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDH30120CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 230.8W; TO247-3
Kind of package: tube
Max. forward impulse current: 720A
Leakage current: 140µA
Power dissipation: 230.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 15A x2
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 230.8W; TO247-3
Kind of package: tube
Max. forward impulse current: 720A
Leakage current: 140µA
Power dissipation: 230.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 15A x2
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
| PCDH30120CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 332W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 92A
Power dissipation: 332W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.9V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 332W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 92A
Power dissipation: 332W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.9V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDH30120CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 332W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 92A
Power dissipation: 332W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.9V
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 332W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 92A
Power dissipation: 332W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.9V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
| PCDH3065CCG1_T0_00601 |
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Hersteller: PanJit Semiconductor
PCDH3065CCG1-T0 THT Schottky diodes
PCDH3065CCG1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PCDH3065CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
PCDH3065CCGB-T0 THT Schottky diodes
PCDH3065CCGB-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PCDH3065CCGC_T0_00601 |
Hersteller: PanJit Semiconductor
PCDH3065CCGC-T0 THT Schottky diodes
PCDH3065CCGC-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PCDH40120CCG1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 294.1W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 108A
Power dissipation: 294.1W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 960A
Max. forward voltage: 2V
Leakage current: 180µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 294.1W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 108A
Power dissipation: 294.1W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 960A
Max. forward voltage: 2V
Leakage current: 180µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDH40120CCG1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 294.1W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 108A
Power dissipation: 294.1W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 960A
Max. forward voltage: 2V
Leakage current: 180µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 294.1W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 108A
Power dissipation: 294.1W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 960A
Max. forward voltage: 2V
Leakage current: 180µA
Produkt ist nicht verfügbar
| PCDH40120CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 443W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 100A
Power dissipation: 443W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 1.36kA
Max. forward voltage: 1.9V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 443W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 100A
Power dissipation: 443W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 1.36kA
Max. forward voltage: 1.9V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDH40120CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 443W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 100A
Power dissipation: 443W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 1.36kA
Max. forward voltage: 1.9V
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 443W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 100A
Power dissipation: 443W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 1.36kA
Max. forward voltage: 1.9V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
| PCDH4065CCG1_T0_00601 |
|
Hersteller: PanJit Semiconductor
PCDH4065CCG1-T0 THT Schottky diodes
PCDH4065CCG1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PCDH4065CCGB_T0_00601 |
Hersteller: PanJit Semiconductor
PCDH4065CCGB-T0 THT Schottky diodes
PCDH4065CCGB-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PCDH4065CCGC_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 166W; TO247-3
Type of diode: Schottky rectifying
Power dissipation: 166W
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Case: TO247-3
Max. load current: 60A
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A x2
Max. forward impulse current: 729A
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 166W; TO247-3
Type of diode: Schottky rectifying
Power dissipation: 166W
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Case: TO247-3
Max. load current: 60A
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A x2
Max. forward impulse current: 729A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDH4065CCGC_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 166W; TO247-3
Type of diode: Schottky rectifying
Power dissipation: 166W
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Case: TO247-3
Max. load current: 60A
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A x2
Max. forward impulse current: 729A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; 166W; TO247-3
Type of diode: Schottky rectifying
Power dissipation: 166W
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Case: TO247-3
Max. load current: 60A
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A x2
Max. forward impulse current: 729A
Produkt ist nicht verfügbar
| PCDP0465G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 56W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 56W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP0465G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 56W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 56W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
Produkt ist nicht verfügbar
| PCDP05120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 129.3W
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 2V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 520A
Leakage current: 50µA
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 129.3W
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 2V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 520A
Leakage current: 50µA
Type of diode: Schottky rectifying
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP05120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 129.3W
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 2V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 520A
Leakage current: 50µA
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 129.3W
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 2V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 520A
Leakage current: 50µA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
| PCDP0665G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP0665G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
Produkt ist nicht verfügbar
| PCDP08120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
PCDP08120G1-T0 THT Schottky diodes
PCDP08120G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PCDP0865G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
PCDP0865G1-T0 THT Schottky diodes
PCDP0865G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PCDP10120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP10120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Produkt ist nicht verfügbar
| PCDP1065G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP1065G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Produkt ist nicht verfügbar
| PCDP1265G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP1265G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
| PCDP15120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP15120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Produkt ist nicht verfügbar
| PCDP1665G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP1665G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
Produkt ist nicht verfügbar
| PCDP20120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PCDP20120G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
Produkt ist nicht verfügbar
| PCDP2065G1_T0_00001 |
|
Hersteller: PanJit Semiconductor
PCDP2065G1-T0 THT Schottky diodes
PCDP2065G1-T0 THT Schottky diodes
Produkt ist nicht verfügbar
| PDZ5.1B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 697+ | 0.1 EUR |
| 926+ | 0.077 EUR |
| 1223+ | 0.058 EUR |
| 1359+ | 0.053 EUR |
| 1656+ | 0.043 EUR |
| 1755+ | 0.041 EUR |
| PDZ5.1B-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 697+ | 0.1 EUR |
| 926+ | 0.077 EUR |
| 1223+ | 0.058 EUR |
| 1359+ | 0.053 EUR |
| 1656+ | 0.043 EUR |
| 1755+ | 0.041 EUR |
| 10000+ | 0.04 EUR |
| PE1403M1Q_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| PE1403M1Q_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Produkt ist nicht verfügbar
| PE1805C4A6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape
Mounting: SMD
Case: SOT23-6
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape
Mounting: SMD
Case: SOT23-6
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| PE1805C4A6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape
Mounting: SMD
Case: SOT23-6
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape
Mounting: SMD
Case: SOT23-6
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
| PE1805C4C6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Mounting: SMD
Case: SOT363
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Mounting: SMD
Case: SOT363
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 715+ | 0.1 EUR |
| 830+ | 0.087 EUR |
| 990+ | 0.072 EUR |
| 1050+ | 0.068 EUR |
| 3000+ | 0.066 EUR |
| PE1805C4C6_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Mounting: SMD
Case: SOT363
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Mounting: SMD
Case: SOT363
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 715+ | 0.1 EUR |
| 830+ | 0.087 EUR |
| 990+ | 0.072 EUR |
| 1050+ | 0.068 EUR |
| PE4105C1ES_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Anzahl je Verpackung: 25 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Anzahl je Verpackung: 25 Stücke
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1725+ | 0.042 EUR |
| 2275+ | 0.031 EUR |
| 2600+ | 0.028 EUR |
| 2950+ | 0.024 EUR |
| 3125+ | 0.023 EUR |
| 15000+ | 0.022 EUR |
| PE4105C1ES_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1725+ | 0.042 EUR |
| 2275+ | 0.031 EUR |
| 2600+ | 0.028 EUR |
| 2950+ | 0.024 EUR |
| 3125+ | 0.023 EUR |
| PEC11SD03M1Q_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PEC11SD03M1Q_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Produkt ist nicht verfügbar
| PEC1605M1Q_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PEC1605M1Q_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PEC3202M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PEC3202M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Produkt ist nicht verfügbar
| PEC3205M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PEC3205M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Produkt ist nicht verfügbar