PCDP0665G1_T0_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 228pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.84 EUR |
| 50+ | 3.84 EUR |
| 100+ | 3.3 EUR |
| 500+ | 2.93 EUR |
| 1000+ | 2.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDP0665G1_T0_00001 Panjit International Inc.
Description: DIODE SIL CARB 650V 6A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 228pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote PCDP0665G1_T0_00001
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PCDP0665G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO220AC Kind of package: tube Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 57.7W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
PCDP0665G1_T0_00001 | Hersteller : Panjit |
Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode |
Produkt ist nicht verfügbar |
|
| PCDP0665G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO220AC Kind of package: tube Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 57.7W |
Produkt ist nicht verfügbar |