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PE4105C1ES_R1_00001 PE4105C1ES_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Kind of package: reel; tape
Version: ESD
Capacitance: 120pF
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 13A
Breakdown voltage: 6...7.5V
Leakage current: 1µA
Type of diode: TVS array
Mounting: SMD
Case: SOD523
auf Bestellung 4200 Stücke:
Lieferzeit 14-21 Tag (e)
1200+0.06 EUR
1786+ 0.04 EUR
2110+ 0.034 EUR
2337+ 0.031 EUR
2526+ 0.028 EUR
2907+ 0.025 EUR
3068+ 0.023 EUR
Mindestbestellmenge: 1200
PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Produkt ist nicht verfügbar
PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Produkt ist nicht verfügbar
PEC3202M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Capacitance: 20pF
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: DFN1006-2
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC3202M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Capacitance: 20pF
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: DFN1006-2
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
PEC3205M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Capacitance: 20pF
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC3205M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Capacitance: 20pF
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU_R1_000A1 PanJit Semiconductor PEC3324C2A-AU Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Leakage current: 50nA
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Max. off-state voltage: 24V
Capacitance: 30pF
Type of diode: TVS array
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
252+ 0.28 EUR
521+ 0.14 EUR
569+ 0.13 EUR
596+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 186
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU_R1_000A1 PanJit Semiconductor PEC3324C2A-AU Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Leakage current: 50nA
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Max. off-state voltage: 24V
Capacitance: 30pF
Type of diode: TVS array
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
252+ 0.28 EUR
521+ 0.14 EUR
569+ 0.13 EUR
596+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 186
PEC33712C2A_R1_00001 PanJit Semiconductor PEC33712C2A.pdf PEC33712C2A-R1 Transil diodes - arrays
auf Bestellung 2025 Stücke:
Lieferzeit 7-14 Tag (e)
338+0.21 EUR
725+ 0.099 EUR
770+ 0.093 EUR
3000+ 0.09 EUR
Mindestbestellmenge: 338
PG4007-AU_R2_100A1 PG4007-AU_R2_100A1 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Application: automotive industry
Produkt ist nicht verfügbar
PG4007-AU_R2_100A1 PG4007-AU_R2_100A1 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf PJA138K-AU-R1 SMD N channel transistors
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
2093+ 0.034 EUR
2213+ 0.032 EUR
Mindestbestellmenge: 278
PJA138K-AU_R2_000A1 PanJit Semiconductor PJA138K-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJA138K_R1_00001 PJA138K_R1_00001 PanJit Semiconductor PJA138K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA138K_R1_00001 PJA138K_R1_00001 PanJit Semiconductor PJA138K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 60mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
211+ 0.34 EUR
651+ 0.11 EUR
810+ 0.088 EUR
855+ 0.084 EUR
3000+ 0.082 EUR
9000+ 0.081 EUR
Mindestbestellmenge: 173
PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 60mΩ
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
211+ 0.34 EUR
651+ 0.11 EUR
810+ 0.088 EUR
855+ 0.084 EUR
Mindestbestellmenge: 173
PJA3401A_R1_00001 PJA3401A_R1_00001 PanJit Semiconductor PJA3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2248 Stücke:
Lieferzeit 7-14 Tag (e)
358+0.2 EUR
650+ 0.11 EUR
724+ 0.099 EUR
875+ 0.082 EUR
895+ 0.08 EUR
926+ 0.077 EUR
1000+ 0.075 EUR
Mindestbestellmenge: 358
PJA3401A_R1_00001 PJA3401A_R1_00001 PanJit Semiconductor PJA3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2248 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
650+ 0.11 EUR
724+ 0.099 EUR
875+ 0.082 EUR
895+ 0.08 EUR
926+ 0.077 EUR
1000+ 0.075 EUR
Mindestbestellmenge: 358
PJA3402_R1_00501 PanJit Semiconductor PJA3402-R1 SMD N channel transistors
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.76 EUR
259+ 0.27 EUR
711+ 0.1 EUR
9000+ 0.073 EUR
Mindestbestellmenge: 19
PJA3403_R1_00001 PanJit Semiconductor PJA3403.pdf PJA3403-R1 SMD P channel transistors
auf Bestellung 2398 Stücke:
Lieferzeit 7-14 Tag (e)
139+0.51 EUR
1090+ 0.066 EUR
1153+ 0.062 EUR
Mindestbestellmenge: 139
PJA3404_R1_00501 PJA3404_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5084 Stücke:
Lieferzeit 7-14 Tag (e)
129+0.56 EUR
192+ 0.37 EUR
425+ 0.17 EUR
962+ 0.074 EUR
1017+ 0.07 EUR
Mindestbestellmenge: 129
PJA3404_R1_00501 PJA3404_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5084 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
192+ 0.37 EUR
425+ 0.17 EUR
962+ 0.074 EUR
1017+ 0.07 EUR
Mindestbestellmenge: 129
PJA3405-AU_R1_000A1 PJA3405-AU_R1_000A1 PanJit Semiconductor PJA3405-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 97mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14.4A
Mounting: SMD
Case: SOT23
auf Bestellung 2864 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
293+ 0.24 EUR
620+ 0.12 EUR
832+ 0.086 EUR
881+ 0.081 EUR
Mindestbestellmenge: 250
PJA3405-AU_R1_000A1 PJA3405-AU_R1_000A1 PanJit Semiconductor PJA3405-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 97mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14.4A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2864 Stücke:
Lieferzeit 7-14 Tag (e)
250+0.29 EUR
293+ 0.24 EUR
620+ 0.12 EUR
832+ 0.086 EUR
881+ 0.081 EUR
3000+ 0.078 EUR
Mindestbestellmenge: 250
PJA3406_R1_00001 PJA3406_R1_00001 PanJit Semiconductor PJA3406.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
256+ 0.28 EUR
650+ 0.11 EUR
947+ 0.076 EUR
1003+ 0.071 EUR
3000+ 0.069 EUR
Mindestbestellmenge: 173
PJA3406_R1_00001 PJA3406_R1_00001 PanJit Semiconductor PJA3406.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
256+ 0.28 EUR
650+ 0.11 EUR
947+ 0.076 EUR
1003+ 0.071 EUR
Mindestbestellmenge: 173
PJA3407_R1_00001 PJA3407_R1_00001 PanJit Semiconductor PJA3407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
252+ 0.28 EUR
500+ 0.14 EUR
807+ 0.089 EUR
863+ 0.083 EUR
Mindestbestellmenge: 167
PJA3407_R1_00001 PJA3407_R1_00001 PanJit Semiconductor PJA3407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
252+ 0.28 EUR
500+ 0.14 EUR
807+ 0.089 EUR
863+ 0.083 EUR
Mindestbestellmenge: 167
PJA3409_R1_00001 PanJit Semiconductor PJA3409.pdf PJA3409-R1 SMD P channel transistors
auf Bestellung 2390 Stücke:
Lieferzeit 7-14 Tag (e)
278+0.26 EUR
863+ 0.083 EUR
911+ 0.079 EUR
9000+ 0.076 EUR
Mindestbestellmenge: 278
PJA3411-AU_R1_000A1 PJA3411-AU_R1_000A1 PanJit Semiconductor PJA3411-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -12.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.1A
On-state resistance: 0.19Ω
Type of transistor: P-MOSFET
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
439+ 0.16 EUR
618+ 0.12 EUR
1003+ 0.071 EUR
1062+ 0.067 EUR
Mindestbestellmenge: 295
PJA3411-AU_R1_000A1 PJA3411-AU_R1_000A1 PanJit Semiconductor PJA3411-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -12.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.1A
On-state resistance: 0.19Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2735 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
439+ 0.16 EUR
618+ 0.12 EUR
1003+ 0.071 EUR
1062+ 0.067 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 295
PJA3411_R1_00001 PanJit Semiconductor PJA3411.pdf PJA3411-R1 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3412-AU_R1_000A1 PanJit Semiconductor PJA3412-AU.pdf PJA3412-AU-R1 SMD N channel transistors
auf Bestellung 2533 Stücke:
Lieferzeit 7-14 Tag (e)
345+0.21 EUR
881+ 0.081 EUR
932+ 0.077 EUR
9000+ 0.074 EUR
Mindestbestellmenge: 345
PJA3412_R1_00501 PanJit Semiconductor PJA3412-R1 SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
157+0.46 EUR
1334+ 0.054 EUR
1413+ 0.051 EUR
Mindestbestellmenge: 157
PJA3413_R1_00001 PanJit Semiconductor PJA3413.pdf PJA3413-R1 SMD P channel transistors
auf Bestellung 2370 Stücke:
Lieferzeit 7-14 Tag (e)
143+0.5 EUR
1367+ 0.052 EUR
1446+ 0.049 EUR
Mindestbestellmenge: 143
PJA3415A-AU_R1_000A1 PJA3415A-AU_R1_000A1 PanJit Semiconductor PJA3415A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
252+ 0.28 EUR
477+ 0.15 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 186
PJA3415A-AU_R1_000A1 PJA3415A-AU_R1_000A1 PanJit Semiconductor PJA3415A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
252+ 0.28 EUR
477+ 0.15 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 186
PJA3415AE_R1_00501 PanJit Semiconductor PJA3415AE-R1 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3416AE_R1_00001 PanJit Semiconductor PJA3416AE.pdf PJA3416AE-R1 SMD N channel transistors
auf Bestellung 2905 Stücke:
Lieferzeit 7-14 Tag (e)
184+0.39 EUR
807+ 0.089 EUR
863+ 0.083 EUR
Mindestbestellmenge: 184
PJA3428_R1_00001 PanJit Semiconductor PJA3428.pdf PJA3428-R1 SMD N channel transistors
auf Bestellung 7390 Stücke:
Lieferzeit 7-14 Tag (e)
260+0.28 EUR
1393+ 0.051 EUR
1475+ 0.048 EUR
Mindestbestellmenge: 260
PJA3430_R1_00001 PJA3430_R1_00001 PanJit Semiconductor PJA3430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 2A
Drain-source voltage: 20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2565 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
307+ 0.23 EUR
731+ 0.098 EUR
1000+ 0.072 EUR
1058+ 0.068 EUR
3000+ 0.065 EUR
Mindestbestellmenge: 209
PJA3430_R1_00001 PJA3430_R1_00001 PanJit Semiconductor PJA3430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 2A
Drain-source voltage: 20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
Type of transistor: N-MOSFET
auf Bestellung 2565 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
307+ 0.23 EUR
731+ 0.098 EUR
1000+ 0.072 EUR
1058+ 0.068 EUR
Mindestbestellmenge: 209
PJA3432-AU_R1_000A1 PJA3432-AU_R1_000A1 PanJit Semiconductor PJA3432-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 570mΩ
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 1.6A
Drain-source voltage: 30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Type of transistor: N-MOSFET
auf Bestellung 2065 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
285+ 0.25 EUR
703+ 0.1 EUR
869+ 0.082 EUR
918+ 0.078 EUR
Mindestbestellmenge: 209
PJA3432-AU_R1_000A1 PJA3432-AU_R1_000A1 PanJit Semiconductor PJA3432-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 570mΩ
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 1.6A
Drain-source voltage: 30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2065 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
285+ 0.25 EUR
703+ 0.1 EUR
869+ 0.082 EUR
918+ 0.078 EUR
3000+ 0.075 EUR
Mindestbestellmenge: 209
PJA3433-AU_R1_000A1 PJA3433-AU_R1_000A1 PanJit Semiconductor PJA3433-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -1.1A
Drain-source voltage: -30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
auf Bestellung 2055 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
589+ 0.12 EUR
667+ 0.11 EUR
782+ 0.092 EUR
834+ 0.086 EUR
Mindestbestellmenge: 358
PJA3433-AU_R1_000A1 PJA3433-AU_R1_000A1 PanJit Semiconductor PJA3433-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -1.1A
Drain-source voltage: -30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2055 Stücke:
Lieferzeit 7-14 Tag (e)
358+0.2 EUR
589+ 0.12 EUR
667+ 0.11 EUR
782+ 0.092 EUR
834+ 0.086 EUR
3000+ 0.084 EUR
9000+ 0.082 EUR
Mindestbestellmenge: 358
PJA3433_R1_00001 PJA3433_R1_00001 PanJit Semiconductor PJA3433.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -1.1A
Drain-source voltage: -30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2861 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
274+ 0.26 EUR
303+ 0.24 EUR
913+ 0.078 EUR
966+ 0.074 EUR
3000+ 0.073 EUR
9000+ 0.071 EUR
Mindestbestellmenge: 179
PJA3433_R1_00001 PJA3433_R1_00001 PanJit Semiconductor PJA3433.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -1.1A
Drain-source voltage: -30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
auf Bestellung 2861 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
274+ 0.26 EUR
303+ 0.24 EUR
913+ 0.078 EUR
966+ 0.074 EUR
Mindestbestellmenge: 179
PJA3434_R1_00001 PJA3434_R1_00001 PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3830 Stücke:
Lieferzeit 7-14 Tag (e)
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1099+ 0.065 EUR
1161+ 0.062 EUR
3000+ 0.059 EUR
Mindestbestellmenge: 218
PJA3434_R1_00001 PJA3434_R1_00001 PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
Mounting: SMD
auf Bestellung 3830 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1099+ 0.065 EUR
1161+ 0.062 EUR
3000+ 0.059 EUR
Mindestbestellmenge: 218
PJA3435_R1_00001 PJA3435_R1_00001 PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
On-state resistance: 6Ω
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -500mA
Drain-source voltage: -20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
307+ 0.23 EUR
340+ 0.21 EUR
1000+ 0.072 EUR
1058+ 0.068 EUR
3000+ 0.065 EUR
Mindestbestellmenge: 200
PJA3435_R1_00001 PJA3435_R1_00001 PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
On-state resistance: 6Ω
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -500mA
Drain-source voltage: -20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
Type of transistor: P-MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
307+ 0.23 EUR
340+ 0.21 EUR
1000+ 0.072 EUR
1058+ 0.068 EUR
3000+ 0.065 EUR
Mindestbestellmenge: 200
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 1.2A
Drain-source voltage: 20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1095+ 0.065 EUR
1158+ 0.062 EUR
Mindestbestellmenge: 218
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 1.2A
Drain-source voltage: 20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1095+ 0.065 EUR
1158+ 0.062 EUR
9000+ 0.059 EUR
Mindestbestellmenge: 218
PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 6Ω
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: 0.5A
Drain-source voltage: 50V
Case: SOT23
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
1007+ 0.071 EUR
1064+ 0.067 EUR
Mindestbestellmenge: 200
PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 6Ω
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: 0.5A
Drain-source voltage: 50V
Case: SOT23
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
1007+ 0.071 EUR
1064+ 0.067 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 200
PE4105C1ES_R1_00001
PE4105C1ES_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Kind of package: reel; tape
Version: ESD
Capacitance: 120pF
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 13A
Breakdown voltage: 6...7.5V
Leakage current: 1µA
Type of diode: TVS array
Mounting: SMD
Case: SOD523
auf Bestellung 4200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1200+0.06 EUR
1786+ 0.04 EUR
2110+ 0.034 EUR
2337+ 0.031 EUR
2526+ 0.028 EUR
2907+ 0.025 EUR
3068+ 0.023 EUR
Mindestbestellmenge: 1200
PEC11SD03M1Q_R1_00501
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC11SD03M1Q_R1_00501
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Produkt ist nicht verfügbar
PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Produkt ist nicht verfügbar
PEC3202M1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Capacitance: 20pF
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: DFN1006-2
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC3202M1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Capacitance: 20pF
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: DFN1006-2
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
PEC3205M1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Capacitance: 20pF
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC3205M1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Capacitance: 20pF
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU
PEC3324C2A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Leakage current: 50nA
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Max. off-state voltage: 24V
Capacitance: 30pF
Type of diode: TVS array
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
252+ 0.28 EUR
521+ 0.14 EUR
569+ 0.13 EUR
596+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 186
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU
PEC3324C2A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Leakage current: 50nA
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Max. off-state voltage: 24V
Capacitance: 30pF
Type of diode: TVS array
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
252+ 0.28 EUR
521+ 0.14 EUR
569+ 0.13 EUR
596+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 186
PEC33712C2A_R1_00001 PEC33712C2A.pdf
Hersteller: PanJit Semiconductor
PEC33712C2A-R1 Transil diodes - arrays
auf Bestellung 2025 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
338+0.21 EUR
725+ 0.099 EUR
770+ 0.093 EUR
3000+ 0.09 EUR
Mindestbestellmenge: 338
PG4007-AU_R2_100A1
PG4007-AU_R2_100A1
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Application: automotive industry
Produkt ist nicht verfügbar
PG4007-AU_R2_100A1
PG4007-AU_R2_100A1
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA138K-AU_R1_000A1 PJA138K-AU.pdf
Hersteller: PanJit Semiconductor
PJA138K-AU-R1 SMD N channel transistors
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
278+0.26 EUR
2093+ 0.034 EUR
2213+ 0.032 EUR
Mindestbestellmenge: 278
PJA138K-AU_R2_000A1
Hersteller: PanJit Semiconductor
PJA138K-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJA138K_R1_00001 PJA138K.pdf
PJA138K_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA138K_R1_00001 PJA138K.pdf
PJA138K_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 60mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
211+ 0.34 EUR
651+ 0.11 EUR
810+ 0.088 EUR
855+ 0.084 EUR
3000+ 0.082 EUR
9000+ 0.081 EUR
Mindestbestellmenge: 173
PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 60mΩ
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
211+ 0.34 EUR
651+ 0.11 EUR
810+ 0.088 EUR
855+ 0.084 EUR
Mindestbestellmenge: 173
PJA3401A_R1_00001 PJA3401A.pdf
PJA3401A_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2248 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
650+ 0.11 EUR
724+ 0.099 EUR
875+ 0.082 EUR
895+ 0.08 EUR
926+ 0.077 EUR
1000+ 0.075 EUR
Mindestbestellmenge: 358
PJA3401A_R1_00001 PJA3401A.pdf
PJA3401A_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
650+ 0.11 EUR
724+ 0.099 EUR
875+ 0.082 EUR
895+ 0.08 EUR
926+ 0.077 EUR
1000+ 0.075 EUR
Mindestbestellmenge: 358
PJA3402_R1_00501
Hersteller: PanJit Semiconductor
PJA3402-R1 SMD N channel transistors
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.76 EUR
259+ 0.27 EUR
711+ 0.1 EUR
9000+ 0.073 EUR
Mindestbestellmenge: 19
PJA3403_R1_00001 PJA3403.pdf
Hersteller: PanJit Semiconductor
PJA3403-R1 SMD P channel transistors
auf Bestellung 2398 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
1090+ 0.066 EUR
1153+ 0.062 EUR
Mindestbestellmenge: 139
PJA3404_R1_00501
PJA3404_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5084 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
129+0.56 EUR
192+ 0.37 EUR
425+ 0.17 EUR
962+ 0.074 EUR
1017+ 0.07 EUR
Mindestbestellmenge: 129
PJA3404_R1_00501
PJA3404_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5084 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
129+0.56 EUR
192+ 0.37 EUR
425+ 0.17 EUR
962+ 0.074 EUR
1017+ 0.07 EUR
Mindestbestellmenge: 129
PJA3405-AU_R1_000A1 PJA3405-AU.pdf
PJA3405-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 97mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14.4A
Mounting: SMD
Case: SOT23
auf Bestellung 2864 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
250+0.29 EUR
293+ 0.24 EUR
620+ 0.12 EUR
832+ 0.086 EUR
881+ 0.081 EUR
Mindestbestellmenge: 250
PJA3405-AU_R1_000A1 PJA3405-AU.pdf
PJA3405-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 97mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14.4A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2864 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
250+0.29 EUR
293+ 0.24 EUR
620+ 0.12 EUR
832+ 0.086 EUR
881+ 0.081 EUR
3000+ 0.078 EUR
Mindestbestellmenge: 250
PJA3406_R1_00001 PJA3406.pdf
PJA3406_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
256+ 0.28 EUR
650+ 0.11 EUR
947+ 0.076 EUR
1003+ 0.071 EUR
3000+ 0.069 EUR
Mindestbestellmenge: 173
PJA3406_R1_00001 PJA3406.pdf
PJA3406_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
256+ 0.28 EUR
650+ 0.11 EUR
947+ 0.076 EUR
1003+ 0.071 EUR
Mindestbestellmenge: 173
PJA3407_R1_00001 PJA3407.pdf
PJA3407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
252+ 0.28 EUR
500+ 0.14 EUR
807+ 0.089 EUR
863+ 0.083 EUR
Mindestbestellmenge: 167
PJA3407_R1_00001 PJA3407.pdf
PJA3407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
252+ 0.28 EUR
500+ 0.14 EUR
807+ 0.089 EUR
863+ 0.083 EUR
Mindestbestellmenge: 167
PJA3409_R1_00001 PJA3409.pdf
Hersteller: PanJit Semiconductor
PJA3409-R1 SMD P channel transistors
auf Bestellung 2390 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
278+0.26 EUR
863+ 0.083 EUR
911+ 0.079 EUR
9000+ 0.076 EUR
Mindestbestellmenge: 278
PJA3411-AU_R1_000A1 PJA3411-AU.pdf
PJA3411-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -12.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.1A
On-state resistance: 0.19Ω
Type of transistor: P-MOSFET
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
439+ 0.16 EUR
618+ 0.12 EUR
1003+ 0.071 EUR
1062+ 0.067 EUR
Mindestbestellmenge: 295
PJA3411-AU_R1_000A1 PJA3411-AU.pdf
PJA3411-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -12.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3.1A
On-state resistance: 0.19Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2735 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
439+ 0.16 EUR
618+ 0.12 EUR
1003+ 0.071 EUR
1062+ 0.067 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 295
PJA3411_R1_00001 PJA3411.pdf
Hersteller: PanJit Semiconductor
PJA3411-R1 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3412-AU_R1_000A1 PJA3412-AU.pdf
Hersteller: PanJit Semiconductor
PJA3412-AU-R1 SMD N channel transistors
auf Bestellung 2533 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
345+0.21 EUR
881+ 0.081 EUR
932+ 0.077 EUR
9000+ 0.074 EUR
Mindestbestellmenge: 345
PJA3412_R1_00501
Hersteller: PanJit Semiconductor
PJA3412-R1 SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
157+0.46 EUR
1334+ 0.054 EUR
1413+ 0.051 EUR
Mindestbestellmenge: 157
PJA3413_R1_00001 PJA3413.pdf
Hersteller: PanJit Semiconductor
PJA3413-R1 SMD P channel transistors
auf Bestellung 2370 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
1367+ 0.052 EUR
1446+ 0.049 EUR
Mindestbestellmenge: 143
PJA3415A-AU_R1_000A1 PJA3415A-AU.pdf
PJA3415A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
252+ 0.28 EUR
477+ 0.15 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 186
PJA3415A-AU_R1_000A1 PJA3415A-AU.pdf
PJA3415A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
252+ 0.28 EUR
477+ 0.15 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 186
PJA3415AE_R1_00501
Hersteller: PanJit Semiconductor
PJA3415AE-R1 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3416AE_R1_00001 PJA3416AE.pdf
Hersteller: PanJit Semiconductor
PJA3416AE-R1 SMD N channel transistors
auf Bestellung 2905 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
184+0.39 EUR
807+ 0.089 EUR
863+ 0.083 EUR
Mindestbestellmenge: 184
PJA3428_R1_00001 PJA3428.pdf
Hersteller: PanJit Semiconductor
PJA3428-R1 SMD N channel transistors
auf Bestellung 7390 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
260+0.28 EUR
1393+ 0.051 EUR
1475+ 0.048 EUR
Mindestbestellmenge: 260
PJA3430_R1_00001 PJA3430.pdf
PJA3430_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 2A
Drain-source voltage: 20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2565 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
307+ 0.23 EUR
731+ 0.098 EUR
1000+ 0.072 EUR
1058+ 0.068 EUR
3000+ 0.065 EUR
Mindestbestellmenge: 209
PJA3430_R1_00001 PJA3430.pdf
PJA3430_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 2A
Drain-source voltage: 20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
Type of transistor: N-MOSFET
auf Bestellung 2565 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
307+ 0.23 EUR
731+ 0.098 EUR
1000+ 0.072 EUR
1058+ 0.068 EUR
Mindestbestellmenge: 209
PJA3432-AU_R1_000A1 PJA3432-AU.pdf
PJA3432-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 570mΩ
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 1.6A
Drain-source voltage: 30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Type of transistor: N-MOSFET
auf Bestellung 2065 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
285+ 0.25 EUR
703+ 0.1 EUR
869+ 0.082 EUR
918+ 0.078 EUR
Mindestbestellmenge: 209
PJA3432-AU_R1_000A1 PJA3432-AU.pdf
PJA3432-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 570mΩ
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 1.6A
Drain-source voltage: 30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2065 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
285+ 0.25 EUR
703+ 0.1 EUR
869+ 0.082 EUR
918+ 0.078 EUR
3000+ 0.075 EUR
Mindestbestellmenge: 209
PJA3433-AU_R1_000A1 PJA3433-AU.pdf
PJA3433-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -1.1A
Drain-source voltage: -30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
auf Bestellung 2055 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
589+ 0.12 EUR
667+ 0.11 EUR
782+ 0.092 EUR
834+ 0.086 EUR
Mindestbestellmenge: 358
PJA3433-AU_R1_000A1 PJA3433-AU.pdf
PJA3433-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -1.1A
Drain-source voltage: -30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2055 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
589+ 0.12 EUR
667+ 0.11 EUR
782+ 0.092 EUR
834+ 0.086 EUR
3000+ 0.084 EUR
9000+ 0.082 EUR
Mindestbestellmenge: 358
PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -1.1A
Drain-source voltage: -30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2861 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
274+ 0.26 EUR
303+ 0.24 EUR
913+ 0.078 EUR
966+ 0.074 EUR
3000+ 0.073 EUR
9000+ 0.071 EUR
Mindestbestellmenge: 179
PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: -1.1A
Drain-source voltage: -30V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Type of transistor: P-MOSFET
auf Bestellung 2861 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
274+ 0.26 EUR
303+ 0.24 EUR
913+ 0.078 EUR
966+ 0.074 EUR
Mindestbestellmenge: 179
PJA3434_R1_00001 PJA3434.pdf
PJA3434_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3830 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1099+ 0.065 EUR
1161+ 0.062 EUR
3000+ 0.059 EUR
Mindestbestellmenge: 218
PJA3434_R1_00001 PJA3434.pdf
PJA3434_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
Mounting: SMD
auf Bestellung 3830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1099+ 0.065 EUR
1161+ 0.062 EUR
3000+ 0.059 EUR
Mindestbestellmenge: 218
PJA3435_R1_00001 PJA3435.pdf
PJA3435_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
On-state resistance: 6Ω
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -500mA
Drain-source voltage: -20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
307+ 0.23 EUR
340+ 0.21 EUR
1000+ 0.072 EUR
1058+ 0.068 EUR
3000+ 0.065 EUR
Mindestbestellmenge: 200
PJA3435_R1_00001 PJA3435.pdf
PJA3435_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
On-state resistance: 6Ω
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -500mA
Drain-source voltage: -20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
Type of transistor: P-MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
307+ 0.23 EUR
340+ 0.21 EUR
1000+ 0.072 EUR
1058+ 0.068 EUR
3000+ 0.065 EUR
Mindestbestellmenge: 200
PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 1.2A
Drain-source voltage: 20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1095+ 0.065 EUR
1158+ 0.062 EUR
Mindestbestellmenge: 218
PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Polarisation: unipolar
Drain current: 1.2A
Drain-source voltage: 20V
Case: SOT23
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
218+0.33 EUR
336+ 0.21 EUR
374+ 0.19 EUR
1095+ 0.065 EUR
1158+ 0.062 EUR
9000+ 0.059 EUR
Mindestbestellmenge: 218
PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 6Ω
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: 0.5A
Drain-source voltage: 50V
Case: SOT23
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
1007+ 0.071 EUR
1064+ 0.067 EUR
Mindestbestellmenge: 200
PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
On-state resistance: 6Ω
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: 0.5A
Drain-source voltage: 50V
Case: SOT23
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
309+ 0.23 EUR
342+ 0.21 EUR
1007+ 0.071 EUR
1064+ 0.067 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 200
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