PEC3202M1Q_R1_00201 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Capacitance: 20pF
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: DFN1006-2
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Capacitance: 20pF
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: DFN1006-2
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Anzahl je Verpackung: 1 Stücke
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Technische Details PEC3202M1Q_R1_00201 PanJit Semiconductor
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape, Capacitance: 20pF, Mounting: SMD, Kind of package: reel; tape, Breakdown voltage: 2.6...4V, Leakage current: 0.5µA, Type of diode: TVS, Features of semiconductor devices: ESD protection, Case: DFN1006-2, Max. off-state voltage: 2.5V, Semiconductor structure: bidirectional, Anzahl je Verpackung: 1 Stücke.
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PEC3202M1Q_R1_00201 | Hersteller : PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape Capacitance: 20pF Mounting: SMD Kind of package: reel; tape Breakdown voltage: 2.6...4V Leakage current: 0.5µA Type of diode: TVS Features of semiconductor devices: ESD protection Case: DFN1006-2 Max. off-state voltage: 2.5V Semiconductor structure: bidirectional |
Produkt ist nicht verfügbar |