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PJA3436-AU_R1_000A1 PanJit Semiconductor
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 1.2A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
218+ | 0.33 EUR |
336+ | 0.21 EUR |
374+ | 0.19 EUR |
1092+ | 0.065 EUR |
1155+ | 0.062 EUR |
9000+ | 0.059 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJA3436-AU_R1_000A1 PanJit Semiconductor
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PJA3436-AU_R1_000A1 nach Preis ab 0.062 EUR bis 0.56 EUR
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PJA3436-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Mounting: SMD Drain-source voltage: 20V Drain current: 1.2A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 4.8A Case: SOT23 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3436-AU_R1_000A1 | Hersteller : Panjit International Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4449 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3436-AU_R1_000A1 | Hersteller : Panjit |
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auf Bestellung 6181 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3436-AU_R1_000A1 | Hersteller : Panjit International Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
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