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PJA3403_R1_00001

PJA3403_R1_00001 PanJit Semiconductor

PJA3403.pdf Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
910+ 0.079 EUR
1025+ 0.07 EUR
1095+ 0.065 EUR
1160+ 0.062 EUR
3000+ 0.059 EUR
Mindestbestellmenge: 715
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Technische Details PJA3403_R1_00001 PanJit Semiconductor

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 98mOhm @ 3.1A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V.

Weitere Produktangebote PJA3403_R1_00001 nach Preis ab 0.062 EUR bis 0.81 EUR

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PJA3403_R1_00001 PJA3403_R1_00001 Hersteller : PanJit Semiconductor PJA3403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
910+ 0.079 EUR
1025+ 0.07 EUR
1095+ 0.065 EUR
1160+ 0.062 EUR
Mindestbestellmenge: 715
PJA3403_R1_00001 PJA3403_R1_00001 Hersteller : Panjit PJA3403-1867410.pdf MOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.77 EUR
10+ 0.57 EUR
100+ 0.32 EUR
1000+ 0.17 EUR
3000+ 0.14 EUR
9000+ 0.11 EUR
Mindestbestellmenge: 4
PJA3403_R1_00001 PJA3403_R1_00001 Hersteller : Panjit International Inc. PJA3403.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
30+ 0.6 EUR
100+ 0.34 EUR
Mindestbestellmenge: 22
PJA3403_R1_00001 PJA3403_R1_00001 Hersteller : Panjit International Inc. PJA3403.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
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