PJA3409_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 15 V
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
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Technische Details PJA3409_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.9A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 15 V.
Weitere Produktangebote PJA3409_R1_00001 nach Preis ab 0.075 EUR bis 0.86 EUR
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PJA3409_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 9.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.15Ω Pulsed drain current: -11.6A Type of transistor: P-MOSFET Drain current: -2.9A Drain-source voltage: -30V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2490 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3409_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 9.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.15Ω Pulsed drain current: -11.6A Type of transistor: P-MOSFET Drain current: -2.9A Drain-source voltage: -30V Power dissipation: 1.25W |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3409_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.9A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 15 V |
auf Bestellung 108791 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3409_R1_00001 | Hersteller : Panjit |
MOSFET 30V P-Channel Enhancement Mode MOSFET |
auf Bestellung 10967 Stücke: Lieferzeit 10-14 Tag (e) |
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