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PJA3415A-AU_R1_000A1 Panjit International Inc.
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Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.1 EUR |
6000+ | 0.099 EUR |
9000+ | 0.085 EUR |
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Technische Details PJA3415A-AU_R1_000A1 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PJA3415A-AU_R1_000A1 nach Preis ab 0.079 EUR bis 0.58 EUR
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PJA3415A-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 88mΩ Pulsed drain current: -18A Type of transistor: P-MOSFET Drain current: -4.5A Drain-source voltage: -20V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2870 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3415A-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 88mΩ Pulsed drain current: -18A Type of transistor: P-MOSFET Drain current: -4.5A Drain-source voltage: -20V Power dissipation: 1.25W |
auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3415A-AU_R1_000A1 | Hersteller : Panjit |
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auf Bestellung 14041 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3415A-AU_R1_000A1 | Hersteller : Panjit International Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 17419 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3415A-AU-R1-000A1 | Hersteller : Panjit |
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