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PJQ5542V-AU_R2_002A1 PJQ5542V-AU_R2_002A1 PanJit Semiconductor PJQ5542V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 544A; 100W
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 544A
Drain-source voltage: 40V
Drain current: 136A
On-state resistance: 3.6mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf PJQ5544-AU-R2 SMD N channel transistors
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.97 EUR
123+ 0.58 EUR
130+ 0.55 EUR
Mindestbestellmenge: 37
PJQ5544V-AU_R2_002A1 PanJit Semiconductor PJQ5544V-AU.pdf PJQ5544V-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJQ5546-AU_R2_002A1 PanJit Semiconductor PJQ5546-AU.pdf PJQ5546-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 PanJit Semiconductor PJQ5546V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 PanJit Semiconductor PJQ5546V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJQ5548-AU_R2_002A1 PanJit Semiconductor PJQ5548-AU.pdf PJQ5548-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJQ5548V-AU_R2_002A1 PanJit Semiconductor PJQ5548V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W
Mounting: SMD
Pulsed drain current: 180A
Power dissipation: 36W
Gate charge: 9.5nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 12.4mΩ
Produkt ist nicht verfügbar
PJQ5548V-AU_R2_002A1 PanJit Semiconductor PJQ5548V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W
Mounting: SMD
Pulsed drain current: 180A
Power dissipation: 36W
Gate charge: 9.5nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 12.4mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJQ5576A-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: DFN5060-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJQ5576A-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: DFN5060-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJQ5844-AU_R2_000A1 PJQ5844-AU_R2_000A1 PanJit Semiconductor PJQ5844-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 180A; 19.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 19.2W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJQ5844-AU_R2_000A1 PJQ5844-AU_R2_000A1 PanJit Semiconductor PJQ5844-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 180A; 19.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 19.2W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 30000 Stücke
Produkt ist nicht verfügbar
PJQ5948-AU_R2_002A1 PJQ5948-AU_R2_002A1 PanJit Semiconductor PJQ5948-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 37A; Idm: 148A; 30W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 30W
Gate-source voltage: ±20V
On-state resistance: 15.7mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
PJQ5948-AU_R2_002A1 PJQ5948-AU_R2_002A1 PanJit Semiconductor PJQ5948-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 37A; Idm: 148A; 30W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 30W
Gate-source voltage: ±20V
On-state resistance: 15.7mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJQ5948V-AU_R2_002A1 PJQ5948V-AU_R2_002A1 PanJit Semiconductor PJQ5948V-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 35A; Idm: 140A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 32W
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
PJQ5948V-AU_R2_002A1 PJQ5948V-AU_R2_002A1 PanJit Semiconductor PJQ5948V-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 35A; Idm: 140A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 32W
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJS6403_S1_00001 PanJit Semiconductor PJS6403-S1 SMD P channel transistors
Produkt ist nicht verfügbar
PJS6421-AU_S1_000A1 PanJit Semiconductor PJS6421-AU.pdf PJS6421-AU-S1 SMD P channel transistors
Produkt ist nicht verfügbar
PJS6421_S1_00001 PanJit Semiconductor PJS6421.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -29.6A
Power dissipation: 2W
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJS6421_S1_00001 PanJit Semiconductor PJS6421.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -29.6A
Power dissipation: 2W
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJS6461-AU_S1_000A1 PanJit Semiconductor PJS6461-AU.pdf PJS6461-AU-S1 SMD P channel transistors
Produkt ist nicht verfügbar
PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2910 Stücke:
Lieferzeit 7-14 Tag (e)
370+0.19 EUR
465+ 0.15 EUR
530+ 0.14 EUR
565+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 370
PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2910 Stücke:
Lieferzeit 14-21 Tag (e)
370+0.19 EUR
465+ 0.15 EUR
530+ 0.14 EUR
565+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 370
PJS6816_S1_00001 PJS6816_S1_00001 PanJit Semiconductor PJS6816.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; Idm: 20.8A; 1.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Pulsed drain current: 20.8A
Power dissipation: 1.25W
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJS6816_S1_00001 PJS6816_S1_00001 PanJit Semiconductor PJS6816.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; Idm: 20.8A; 1.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Pulsed drain current: 20.8A
Power dissipation: 1.25W
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJS6839_S1_00001 PJS6839_S1_00001 PanJit Semiconductor PJS6839.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
370+0.19 EUR
680+ 0.11 EUR
755+ 0.095 EUR
910+ 0.079 EUR
965+ 0.074 EUR
9000+ 0.071 EUR
Mindestbestellmenge: 370
PJS6839_S1_00001 PJS6839_S1_00001 PanJit Semiconductor PJS6839.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
370+0.19 EUR
680+ 0.11 EUR
755+ 0.095 EUR
910+ 0.079 EUR
965+ 0.074 EUR
Mindestbestellmenge: 370
PJSD03TS-AU_R1_000A1 PanJit Semiconductor Category: Transil diodes - arrays
Description: Diode: TVS; 4V; 5A; 120W; unidirectional; SOD523; reel,tape
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. forward impulse current: 5A
Peak pulse power dissipation: 120W
Breakdown voltage: 4V
Leakage current: 0.2mA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
auf Bestellung 4785 Stücke:
Lieferzeit 14-21 Tag (e)
370+0.19 EUR
695+ 0.1 EUR
775+ 0.093 EUR
940+ 0.076 EUR
995+ 0.072 EUR
Mindestbestellmenge: 370
PJSD03TS-AU_R1_000A1 PanJit Semiconductor Category: Transil diodes - arrays
Description: Diode: TVS; 4V; 5A; 120W; unidirectional; SOD523; reel,tape
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. forward impulse current: 5A
Peak pulse power dissipation: 120W
Breakdown voltage: 4V
Leakage current: 0.2mA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4785 Stücke:
Lieferzeit 7-14 Tag (e)
370+0.19 EUR
695+ 0.1 EUR
775+ 0.093 EUR
940+ 0.076 EUR
995+ 0.072 EUR
5000+ 0.069 EUR
Mindestbestellmenge: 370
PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Application: automotive industry
Capacitance: 110pF
auf Bestellung 4950 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
417+ 0.17 EUR
556+ 0.13 EUR
770+ 0.093 EUR
807+ 0.089 EUR
Mindestbestellmenge: 295
PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Application: automotive industry
Capacitance: 110pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4950 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
417+ 0.17 EUR
556+ 0.13 EUR
770+ 0.093 EUR
807+ 0.089 EUR
5000+ 0.086 EUR
Mindestbestellmenge: 295
PJSD05TS_R1_00001 PJSD05TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 6V; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 110pF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJSD05TS_R1_00001 PJSD05TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 6V; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 110pF
Produkt ist nicht verfügbar
PJSD12CW-AU_R1_000A1 PJSD12CW-AU_R1_000A1 PanJit Semiconductor PJSD05CW-AU_SERIES.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3÷14.7V; 15A; 350W; SOD323; reel,tape
Type of diode: TVS array
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.1nF
Application: automotive industry
Produkt ist nicht verfügbar
PJSD12CW-AU_R1_000A1 PJSD12CW-AU_R1_000A1 PanJit Semiconductor PJSD05CW-AU_SERIES.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3÷14.7V; 15A; 350W; SOD323; reel,tape
Type of diode: TVS array
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.1nF
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJSD12TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; SOD523
Type of diode: TVS array
Mounting: SMD
Case: SOD523
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJSD12TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; SOD523
Type of diode: TVS array
Mounting: SMD
Case: SOD523
Produkt ist nicht verfügbar
PJSD24TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf PJSD24TS-R1 Unidirectional SMD transil diodes
Produkt ist nicht verfügbar
PJSD36W-AU_R1_000A1 PanJit Semiconductor PJSD03W-AU_SERIES.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 350W; 39.9÷45V; 1A; unidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 39.9...45V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Application: automotive industry
Capacitance: 30pF
Produkt ist nicht verfügbar
PJSD36W-AU_R1_000A1 PanJit Semiconductor PJSD03W-AU_SERIES.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 350W; 39.9÷45V; 1A; unidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 39.9...45V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Application: automotive industry
Capacitance: 30pF
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJSD36W_R1_00001 PanJit Semiconductor Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 350W; 39.9÷45V; 1A; unidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 39.9...45V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 30pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10000 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
234+ 0.31 EUR
334+ 0.21 EUR
458+ 0.16 EUR
808+ 0.089 EUR
855+ 0.084 EUR
10000+ 0.081 EUR
Mindestbestellmenge: 173
PJSD36W_R1_00001 PanJit Semiconductor Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 350W; 39.9÷45V; 1A; unidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 39.9...45V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 30pF
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
234+ 0.31 EUR
334+ 0.21 EUR
458+ 0.16 EUR
808+ 0.089 EUR
855+ 0.084 EUR
10000+ 0.081 EUR
Mindestbestellmenge: 173
PJT138K-AU_R1_000A1 PJT138K-AU_R1_000A1 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 236mW
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
650+ 0.11 EUR
725+ 0.099 EUR
875+ 0.082 EUR
925+ 0.078 EUR
Mindestbestellmenge: 360
PJT138K-AU_R1_000A1 PJT138K-AU_R1_000A1 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 236mW
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
650+ 0.11 EUR
725+ 0.099 EUR
875+ 0.082 EUR
925+ 0.078 EUR
9000+ 0.075 EUR
Mindestbestellmenge: 360
PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
On-state resistance: 400/600mΩ
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
370+0.19 EUR
540+ 0.13 EUR
600+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 370
PJT7600_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; SOT363
Case: SOT363
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
On-state resistance: 400/600mΩ
Type of transistor: N/P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
370+0.19 EUR
540+ 0.13 EUR
600+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 370
PJT7600_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; SOT363
Case: SOT363
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar
PJT7603_R1_00001 PJT7603_R1_00001 PanJit Semiconductor PJT7603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; -250/400mA; 350mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 0.95/1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 50/-60V
Drain current: -250/400mA
On-state resistance: 2.5/6Ω
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
650+ 0.11 EUR
725+ 0.099 EUR
885+ 0.081 EUR
935+ 0.077 EUR
9000+ 0.074 EUR
Mindestbestellmenge: 360
PJT7603_R1_00001 PJT7603_R1_00001 PanJit Semiconductor PJT7603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; -250/400mA; 350mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 0.95/1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 50/-60V
Drain current: -250/400mA
On-state resistance: 2.5/6Ω
Type of transistor: N/P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
650+ 0.11 EUR
725+ 0.099 EUR
885+ 0.081 EUR
935+ 0.077 EUR
Mindestbestellmenge: 360
PJT7605-AU_R1_000A1 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; SOT363
Case: SOT363
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar
PJT7605-AU_R1_000A1 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; SOT363
Case: SOT363
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJT7800_R1_00001 PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5995 Stücke:
Lieferzeit 7-14 Tag (e)
139+0.51 EUR
182+ 0.39 EUR
319+ 0.22 EUR
715+ 0.1 EUR
758+ 0.094 EUR
Mindestbestellmenge: 139
PJT7800_R1_00001 PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5995 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
182+ 0.39 EUR
319+ 0.22 EUR
715+ 0.1 EUR
758+ 0.094 EUR
Mindestbestellmenge: 139
PJT7801_R1_00001 PJT7801_R1_00001 PanJit Semiconductor PJT7801.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Power dissipation: 0.35W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.8A
Drain-source voltage: -20V
Drain current: -700mA
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2945 Stücke:
Lieferzeit 7-14 Tag (e)
218+0.33 EUR
268+ 0.27 EUR
319+ 0.22 EUR
715+ 0.1 EUR
758+ 0.094 EUR
Mindestbestellmenge: 218
PJT7801_R1_00001 PJT7801_R1_00001 PanJit Semiconductor PJT7801.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Power dissipation: 0.35W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.8A
Drain-source voltage: -20V
Drain current: -700mA
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET x2
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
268+ 0.27 EUR
319+ 0.22 EUR
715+ 0.1 EUR
758+ 0.094 EUR
Mindestbestellmenge: 218
PJT7828_R1_00001 PanJit Semiconductor PJT7828-R1 Multi channel transistors
Produkt ist nicht verfügbar
PJT7838_R1_00001 PJT7838_R1_00001 PanJit Semiconductor PJT7838.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
465+ 0.15 EUR
520+ 0.14 EUR
635+ 0.11 EUR
9000+ 0.1 EUR
Mindestbestellmenge: 365
PJT7838_R1_00001 PJT7838_R1_00001 PanJit Semiconductor PJT7838.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
465+ 0.15 EUR
520+ 0.14 EUR
635+ 0.11 EUR
Mindestbestellmenge: 365
PJQ5542V-AU_R2_002A1 PJQ5542V-AU.pdf
PJQ5542V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 544A; 100W
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 544A
Drain-source voltage: 40V
Drain current: 136A
On-state resistance: 3.6mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
Hersteller: PanJit Semiconductor
PJQ5544-AU-R2 SMD N channel transistors
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
37+1.97 EUR
123+ 0.58 EUR
130+ 0.55 EUR
Mindestbestellmenge: 37
PJQ5544V-AU_R2_002A1 PJQ5544V-AU.pdf
Hersteller: PanJit Semiconductor
PJQ5544V-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJQ5546-AU_R2_002A1 PJQ5546-AU.pdf
Hersteller: PanJit Semiconductor
PJQ5546-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJQ5548-AU_R2_002A1 PJQ5548-AU.pdf
Hersteller: PanJit Semiconductor
PJQ5548-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJQ5548V-AU_R2_002A1 PJQ5548V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W
Mounting: SMD
Pulsed drain current: 180A
Power dissipation: 36W
Gate charge: 9.5nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 12.4mΩ
Produkt ist nicht verfügbar
PJQ5548V-AU_R2_002A1 PJQ5548V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W
Mounting: SMD
Pulsed drain current: 180A
Power dissipation: 36W
Gate charge: 9.5nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 12.4mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJQ5576A-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: DFN5060-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJQ5576A-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: DFN5060-8
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJQ5844-AU_R2_000A1 PJQ5844-AU.pdf
PJQ5844-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 180A; 19.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 19.2W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJQ5844-AU_R2_000A1 PJQ5844-AU.pdf
PJQ5844-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 180A; 19.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 19.2W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 30000 Stücke
Produkt ist nicht verfügbar
PJQ5948-AU_R2_002A1 PJQ5948-AU.pdf
PJQ5948-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 37A; Idm: 148A; 30W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 30W
Gate-source voltage: ±20V
On-state resistance: 15.7mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
PJQ5948-AU_R2_002A1 PJQ5948-AU.pdf
PJQ5948-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 37A; Idm: 148A; 30W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 30W
Gate-source voltage: ±20V
On-state resistance: 15.7mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJQ5948V-AU_R2_002A1 PJQ5948V-AU.pdf
PJQ5948V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 35A; Idm: 140A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 32W
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
PJQ5948V-AU_R2_002A1 PJQ5948V-AU.pdf
PJQ5948V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 35A; Idm: 140A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 32W
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJS6403_S1_00001
Hersteller: PanJit Semiconductor
PJS6403-S1 SMD P channel transistors
Produkt ist nicht verfügbar
PJS6421-AU_S1_000A1 PJS6421-AU.pdf
Hersteller: PanJit Semiconductor
PJS6421-AU-S1 SMD P channel transistors
Produkt ist nicht verfügbar
PJS6421_S1_00001 PJS6421.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -29.6A
Power dissipation: 2W
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJS6421_S1_00001 PJS6421.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -29.6A
Power dissipation: 2W
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJS6461-AU_S1_000A1 PJS6461-AU.pdf
Hersteller: PanJit Semiconductor
PJS6461-AU-S1 SMD P channel transistors
Produkt ist nicht verfügbar
PJS6601_S1_00001
PJS6601_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2910 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
465+ 0.15 EUR
530+ 0.14 EUR
565+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 370
PJS6601_S1_00001
PJS6601_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2910 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
465+ 0.15 EUR
530+ 0.14 EUR
565+ 0.13 EUR
600+ 0.12 EUR
Mindestbestellmenge: 370
PJS6816_S1_00001 PJS6816.pdf
PJS6816_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; Idm: 20.8A; 1.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Pulsed drain current: 20.8A
Power dissipation: 1.25W
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJS6816_S1_00001 PJS6816.pdf
PJS6816_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; Idm: 20.8A; 1.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Pulsed drain current: 20.8A
Power dissipation: 1.25W
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
680+ 0.11 EUR
755+ 0.095 EUR
910+ 0.079 EUR
965+ 0.074 EUR
9000+ 0.071 EUR
Mindestbestellmenge: 370
PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
680+ 0.11 EUR
755+ 0.095 EUR
910+ 0.079 EUR
965+ 0.074 EUR
Mindestbestellmenge: 370
PJSD03TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS; 4V; 5A; 120W; unidirectional; SOD523; reel,tape
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. forward impulse current: 5A
Peak pulse power dissipation: 120W
Breakdown voltage: 4V
Leakage current: 0.2mA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
auf Bestellung 4785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
695+ 0.1 EUR
775+ 0.093 EUR
940+ 0.076 EUR
995+ 0.072 EUR
Mindestbestellmenge: 370
PJSD03TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS; 4V; 5A; 120W; unidirectional; SOD523; reel,tape
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. forward impulse current: 5A
Peak pulse power dissipation: 120W
Breakdown voltage: 4V
Leakage current: 0.2mA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4785 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
695+ 0.1 EUR
775+ 0.093 EUR
940+ 0.076 EUR
995+ 0.072 EUR
5000+ 0.069 EUR
Mindestbestellmenge: 370
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Application: automotive industry
Capacitance: 110pF
auf Bestellung 4950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
417+ 0.17 EUR
556+ 0.13 EUR
770+ 0.093 EUR
807+ 0.089 EUR
Mindestbestellmenge: 295
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Application: automotive industry
Capacitance: 110pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4950 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
417+ 0.17 EUR
556+ 0.13 EUR
770+ 0.093 EUR
807+ 0.089 EUR
5000+ 0.086 EUR
Mindestbestellmenge: 295
PJSD05TS_R1_00001 PJSD03TS_SERIES.pdf
PJSD05TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 6V; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 110pF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJSD05TS_R1_00001 PJSD03TS_SERIES.pdf
PJSD05TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 6V; unidirectional; SOD523; reel,tape; 110pF
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 110pF
Produkt ist nicht verfügbar
PJSD12CW-AU_R1_000A1 PJSD05CW-AU_SERIES.pdf
PJSD12CW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3÷14.7V; 15A; 350W; SOD323; reel,tape
Type of diode: TVS array
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.1nF
Application: automotive industry
Produkt ist nicht verfügbar
PJSD12CW-AU_R1_000A1 PJSD05CW-AU_SERIES.pdf
PJSD12CW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3÷14.7V; 15A; 350W; SOD323; reel,tape
Type of diode: TVS array
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 15A
Peak pulse power dissipation: 0.35kW
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.1nF
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJSD12TS_R1_00001 PJSD03TS_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; SOD523
Type of diode: TVS array
Mounting: SMD
Case: SOD523
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJSD12TS_R1_00001 PJSD03TS_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; SOD523
Type of diode: TVS array
Mounting: SMD
Case: SOD523
Produkt ist nicht verfügbar
PJSD24TS_R1_00001 PJSD03TS_SERIES.pdf
Hersteller: PanJit Semiconductor
PJSD24TS-R1 Unidirectional SMD transil diodes
Produkt ist nicht verfügbar
PJSD36W-AU_R1_000A1 PJSD03W-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 350W; 39.9÷45V; 1A; unidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 39.9...45V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Application: automotive industry
Capacitance: 30pF
Produkt ist nicht verfügbar
PJSD36W-AU_R1_000A1 PJSD03W-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 350W; 39.9÷45V; 1A; unidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 39.9...45V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Application: automotive industry
Capacitance: 30pF
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJSD36W_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 350W; 39.9÷45V; 1A; unidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 39.9...45V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 30pF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
234+ 0.31 EUR
334+ 0.21 EUR
458+ 0.16 EUR
808+ 0.089 EUR
855+ 0.084 EUR
10000+ 0.081 EUR
Mindestbestellmenge: 173
PJSD36W_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 350W; 39.9÷45V; 1A; unidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 39.9...45V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 30pF
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
234+ 0.31 EUR
334+ 0.21 EUR
458+ 0.16 EUR
808+ 0.089 EUR
855+ 0.084 EUR
10000+ 0.081 EUR
Mindestbestellmenge: 173
PJT138K-AU_R1_000A1
PJT138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 236mW
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
650+ 0.11 EUR
725+ 0.099 EUR
875+ 0.082 EUR
925+ 0.078 EUR
Mindestbestellmenge: 360
PJT138K-AU_R1_000A1
PJT138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 236mW
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
650+ 0.11 EUR
725+ 0.099 EUR
875+ 0.082 EUR
925+ 0.078 EUR
9000+ 0.075 EUR
Mindestbestellmenge: 360
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
On-state resistance: 400/600mΩ
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
540+ 0.13 EUR
600+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 370
PJT7600_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; SOT363
Case: SOT363
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
On-state resistance: 400/600mΩ
Type of transistor: N/P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
540+ 0.13 EUR
600+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 370
PJT7600_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; SOT363
Case: SOT363
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar
PJT7603_R1_00001 PJT7603.pdf
PJT7603_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; -250/400mA; 350mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 0.95/1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 50/-60V
Drain current: -250/400mA
On-state resistance: 2.5/6Ω
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
650+ 0.11 EUR
725+ 0.099 EUR
885+ 0.081 EUR
935+ 0.077 EUR
9000+ 0.074 EUR
Mindestbestellmenge: 360
PJT7603_R1_00001 PJT7603.pdf
PJT7603_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; -250/400mA; 350mW
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 0.95/1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 50/-60V
Drain current: -250/400mA
On-state resistance: 2.5/6Ω
Type of transistor: N/P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
650+ 0.11 EUR
725+ 0.099 EUR
885+ 0.081 EUR
935+ 0.077 EUR
Mindestbestellmenge: 360
PJT7605-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; SOT363
Case: SOT363
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar
PJT7605-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; SOT363
Case: SOT363
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Kind of channel: enhanced
Type of transistor: N/P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5995 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
182+ 0.39 EUR
319+ 0.22 EUR
715+ 0.1 EUR
758+ 0.094 EUR
Mindestbestellmenge: 139
PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
182+ 0.39 EUR
319+ 0.22 EUR
715+ 0.1 EUR
758+ 0.094 EUR
Mindestbestellmenge: 139
PJT7801_R1_00001 PJT7801.pdf
PJT7801_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Power dissipation: 0.35W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.8A
Drain-source voltage: -20V
Drain current: -700mA
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2945 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
218+0.33 EUR
268+ 0.27 EUR
319+ 0.22 EUR
715+ 0.1 EUR
758+ 0.094 EUR
Mindestbestellmenge: 218
PJT7801_R1_00001 PJT7801.pdf
PJT7801_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Power dissipation: 0.35W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.8A
Drain-source voltage: -20V
Drain current: -700mA
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET x2
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
218+0.33 EUR
268+ 0.27 EUR
319+ 0.22 EUR
715+ 0.1 EUR
758+ 0.094 EUR
Mindestbestellmenge: 218
PJT7828_R1_00001
Hersteller: PanJit Semiconductor
PJT7828-R1 Multi channel transistors
Produkt ist nicht verfügbar
PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
465+ 0.15 EUR
520+ 0.14 EUR
635+ 0.11 EUR
9000+ 0.1 EUR
Mindestbestellmenge: 365
PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
465+ 0.15 EUR
520+ 0.14 EUR
635+ 0.11 EUR
Mindestbestellmenge: 365
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