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PJQ5546-AU_R2_002A1 Panjit International Inc.
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Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.58 EUR |
14+ | 1.3 EUR |
100+ | 1.01 EUR |
500+ | 0.86 EUR |
1000+ | 0.7 EUR |
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Technische Details PJQ5546-AU_R2_002A1 Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 50µA, Supplier Device Package: DFN5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote PJQ5546-AU_R2_002A1 nach Preis ab 0.62 EUR bis 1.59 EUR
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PJQ5546-AU_R2_002A1 | Hersteller : Panjit |
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auf Bestellung 2875 Stücke: Lieferzeit 10-14 Tag (e) |
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PJQ5546-AU_R2_002A1 | Hersteller : PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 340A; 68W Drain-source voltage: 40V Drain current: 85A Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 340A Power dissipation: 68W Kind of channel: enhanced Gate charge: 20nC Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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PJQ5546-AU_R2_002A1 | Hersteller : Panjit International Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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![]() |
PJQ5546-AU_R2_002A1 | Hersteller : PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 340A; 68W Drain-source voltage: 40V Drain current: 85A Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 340A Power dissipation: 68W Kind of channel: enhanced Gate charge: 20nC Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET Application: automotive industry |
Produkt ist nicht verfügbar |