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PJS6839_S1_00001

PJS6839_S1_00001 Panjit International Inc.


PJS6839.pdf Hersteller: Panjit International Inc.
Description: 60V DUAL P-CHANNEL ENHANCEMENT M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
Mindestbestellmenge: 3000
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Technische Details PJS6839_S1_00001 Panjit International Inc.

Description: 60V DUAL P-CHANNEL ENHANCEMENT M, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V, Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-6.

Weitere Produktangebote PJS6839_S1_00001 nach Preis ab 0.071 EUR bis 0.65 EUR

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PJS6839_S1_00001 PJS6839_S1_00001 Hersteller : PanJit Semiconductor PJS6839.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
680+ 0.11 EUR
755+ 0.095 EUR
910+ 0.079 EUR
965+ 0.074 EUR
9000+ 0.071 EUR
Mindestbestellmenge: 370
PJS6839_S1_00001 PJS6839_S1_00001 Hersteller : PanJit Semiconductor PJS6839.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
680+ 0.11 EUR
755+ 0.095 EUR
910+ 0.079 EUR
965+ 0.074 EUR
Mindestbestellmenge: 370
PJS6839_S1_00001 PJS6839_S1_00001 Hersteller : Panjit PJS6839-1871443.pdf MOSFET 60V Dual P-Channel Enhancement Mode MOSFET
auf Bestellung 20582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.65 EUR
10+ 0.46 EUR
100+ 0.21 EUR
1000+ 0.16 EUR
3000+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 5
PJS6839_S1_00001 PJS6839_S1_00001 Hersteller : Panjit International Inc. PJS6839.pdf Description: 60V DUAL P-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 9997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
38+ 0.46 EUR
100+ 0.23 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 28
PJS6839-S1-00001 PJS6839-S1-00001 Hersteller : Panjit PJS6839-1871443.pdf MOSFET SOT23-6L/MOS/SOT/NFET-60TLMP
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