Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1519) > Seite 15 nach 26
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PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 0.19pF |
Produkt ist nicht verfügbar |
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape Capacitance: 0.6pF Mounting: SMD Case: DFN1006-2 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Breakdown voltage: 6.8...11.2V Leakage current: 75nA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape Capacitance: 0.6pF Mounting: SMD Case: DFN1006-2 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Breakdown voltage: 6.8...11.2V Leakage current: 75nA |
Produkt ist nicht verfügbar |
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PEC3202M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Capacitance: 20pF Max. off-state voltage: 2.5V Semiconductor structure: bidirectional Breakdown voltage: 2.6...4V Leakage current: 0.5µA Case: DFN1006-2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PEC3202M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Capacitance: 20pF Max. off-state voltage: 2.5V Semiconductor structure: bidirectional Breakdown voltage: 2.6...4V Leakage current: 0.5µA Case: DFN1006-2 |
Produkt ist nicht verfügbar |
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PEC3205M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Capacitance: 20pF Max. off-state voltage: 5V Semiconductor structure: bidirectional Breakdown voltage: 5.5...8V Leakage current: 0.5µA Case: DFN1006-2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PEC3205M1Q_R1_00201 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Capacitance: 20pF Max. off-state voltage: 5V Semiconductor structure: bidirectional Breakdown voltage: 5.5...8V Leakage current: 0.5µA Case: DFN1006-2 |
Produkt ist nicht verfügbar |
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PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Mounting: SMD Case: SOT23 Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Capacitance: 30pF Max. off-state voltage: 24V Semiconductor structure: bidirectional; double Max. forward impulse current: 7A Breakdown voltage: 26.2...30.3V Leakage current: 50nA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Mounting: SMD Case: SOT23 Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Capacitance: 30pF Max. off-state voltage: 24V Semiconductor structure: bidirectional; double Max. forward impulse current: 7A Breakdown voltage: 26.2...30.3V Leakage current: 50nA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 7.5...13.3V Max. forward impulse current: 8A Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 7...12V Features of semiconductor devices: ESD protection Leakage current: 1µA Kind of package: reel; tape Capacitance: 35pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2025 Stücke: Lieferzeit 7-14 Tag (e) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
![]() Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 7.5...13.3V Max. forward impulse current: 8A Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 7...12V Features of semiconductor devices: ESD protection Leakage current: 1µA Kind of package: reel; tape Capacitance: 35pF |
auf Bestellung 2025 Stücke: Lieferzeit 14-21 Tag (e) |
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PG4007-AU_R2_100A1 | PanJit Semiconductor |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA Mounting: THT Application: automotive industry Type of diode: rectifying Load current: 1A Max. forward voltage: 1.1V Max. off-state voltage: 1kV Features of semiconductor devices: glass passivated Case: DO41 Max. forward impulse current: 30A Leakage current: 50µA Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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PG4007-AU_R2_100A1 | PanJit Semiconductor |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA Mounting: THT Application: automotive industry Type of diode: rectifying Load current: 1A Max. forward voltage: 1.1V Max. off-state voltage: 1kV Features of semiconductor devices: glass passivated Case: DO41 Max. forward impulse current: 30A Leakage current: 50µA Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJA138K-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4.5Ω Pulsed drain current: 1.2A Type of transistor: N-MOSFET Drain current: 0.5A Drain-source voltage: 50V Power dissipation: 0.5W |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA138K-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4.5Ω Pulsed drain current: 1.2A Type of transistor: N-MOSFET Drain current: 0.5A Drain-source voltage: 50V Power dissipation: 0.5W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2840 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA138K-AU_R2_000A1 | PanJit Semiconductor | PJA138K-AU-R2 SMD N channel transistors |
Produkt ist nicht verfügbar |
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PJA138K_R1_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
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PJA3400_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 5.7nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 60mΩ Pulsed drain current: 19.6A Type of transistor: N-MOSFET Drain current: 4.9A Drain-source voltage: 30V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3400_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 5.7nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 60mΩ Pulsed drain current: 19.6A Type of transistor: N-MOSFET Drain current: 4.9A Drain-source voltage: 30V Power dissipation: 1.25W |
auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Mounting: SMD Drain-source voltage: -30V Drain current: -3.6A On-state resistance: 86mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -14.4A Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2650 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3401A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Mounting: SMD Drain-source voltage: -30V Drain current: -3.6A On-state resistance: 86mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -14.4A Case: SOT23 |
auf Bestellung 2650 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3402_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 11.3nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 92mΩ Pulsed drain current: 17.6A Type of transistor: N-MOSFET Drain current: 4.4A Drain-source voltage: 30V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 4419 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3402_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 11.3nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 92mΩ Pulsed drain current: 17.6A Type of transistor: N-MOSFET Drain current: 4.4A Drain-source voltage: 30V Power dissipation: 1.25W |
auf Bestellung 4419 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3403_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.165Ω Pulsed drain current: -12.4A Type of transistor: P-MOSFET Drain current: -3.1A Drain-source voltage: -30V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3403_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.165Ω Pulsed drain current: -12.4A Type of transistor: P-MOSFET Drain current: -3.1A Drain-source voltage: -30V Power dissipation: 1.25W |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3404_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5085 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3404_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 5085 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3405-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 97mΩ Pulsed drain current: -14.4A Type of transistor: P-MOSFET Drain current: -3.6A Drain-source voltage: -30V Power dissipation: 1.25W |
auf Bestellung 2885 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3405-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 97mΩ Pulsed drain current: -14.4A Type of transistor: P-MOSFET Drain current: -3.6A Drain-source voltage: -30V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2885 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3406_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Case: SOT23 Mounting: SMD On-state resistance: 70mΩ Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.4A Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 5.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17.6A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3406_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Case: SOT23 Mounting: SMD On-state resistance: 70mΩ Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.4A Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 5.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17.6A |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3407_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2975 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3407_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3409_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 9.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.15Ω Pulsed drain current: -11.6A Type of transistor: P-MOSFET Drain current: -2.9A Drain-source voltage: -30V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2490 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3409_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 9.8nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.15Ω Pulsed drain current: -11.6A Type of transistor: P-MOSFET Drain current: -2.9A Drain-source voltage: -30V Power dissipation: 1.25W |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3411-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 2785 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3411-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2785 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3411_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJA3411_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PJA3412-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 4.6nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 95mΩ Pulsed drain current: 16.4A Type of transistor: N-MOSFET Drain current: 4.1A Drain-source voltage: 20V Power dissipation: 1.25W |
auf Bestellung 2555 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3412-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 4.6nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 95mΩ Pulsed drain current: 16.4A Type of transistor: N-MOSFET Drain current: 4.1A Drain-source voltage: 20V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2555 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3412_R1_00001 | PanJit Semiconductor |
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PJA3413_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 146mΩ Pulsed drain current: -13.6A Type of transistor: P-MOSFET Drain current: -3.4A Drain-source voltage: -20V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3413_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 146mΩ Pulsed drain current: -13.6A Type of transistor: P-MOSFET Drain current: -3.4A Drain-source voltage: -20V Power dissipation: 1.25W |
auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 88mΩ Pulsed drain current: -18A Type of transistor: P-MOSFET Drain current: -4.5A Drain-source voltage: -20V Power dissipation: 1.25W |
auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 88mΩ Pulsed drain current: -18A Type of transistor: P-MOSFET Drain current: -4.5A Drain-source voltage: -20V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2870 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3415AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJA3415AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PJA3416AE_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 8.6nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 34mΩ Pulsed drain current: 32A Type of transistor: N-MOSFET Drain current: 6.5A Drain-source voltage: 20V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2925 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3416AE_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 8.6nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 34mΩ Pulsed drain current: 32A Type of transistor: N-MOSFET Drain current: 6.5A Drain-source voltage: 20V Power dissipation: 1.25W |
auf Bestellung 2925 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3419AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJA3419AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PJA3419_R1_00001 | PanJit Semiconductor |
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Produkt ist nicht verfügbar |
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PJA3428_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±10V On-state resistance: 4Ω Pulsed drain current: 0.6A Type of transistor: N-MOSFET Drain current: 0.3A Drain-source voltage: 30V Power dissipation: 0.5W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 4890 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3428_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±10V On-state resistance: 4Ω Pulsed drain current: 0.6A Type of transistor: N-MOSFET Drain current: 0.3A Drain-source voltage: 30V Power dissipation: 0.5W |
auf Bestellung 4890 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3430_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Drain current: 2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2570 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3430_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Drain current: 2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A On-state resistance: 0.4Ω Type of transistor: N-MOSFET |
auf Bestellung 2570 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.6A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6.4A On-state resistance: 570mΩ Type of transistor: N-MOSFET |
auf Bestellung 2165 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.6A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6.4A On-state resistance: 570mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2165 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Application: automotive industry Drain current: -1.1A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: -30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -4.4A On-state resistance: 0.97Ω Type of transistor: P-MOSFET |
auf Bestellung 2355 Stücke: Lieferzeit 14-21 Tag (e) |
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PEC11SD03M1Q_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Produkt ist nicht verfügbar
PEC1605M1Q_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC1605M1Q_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Produkt ist nicht verfügbar
PEC3202M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC3202M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Produkt ist nicht verfügbar
PEC3205M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC3205M1Q_R1_00201 |
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Produkt ist nicht verfügbar
PEC3324C2A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 30pF
Max. off-state voltage: 24V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 7A
Breakdown voltage: 26.2...30.3V
Leakage current: 50nA
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 30pF
Max. off-state voltage: 24V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 7A
Breakdown voltage: 26.2...30.3V
Leakage current: 50nA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
186+ | 0.39 EUR |
252+ | 0.28 EUR |
521+ | 0.14 EUR |
569+ | 0.13 EUR |
596+ | 0.12 EUR |
3000+ | 0.11 EUR |
PEC3324C2A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 30pF
Max. off-state voltage: 24V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 7A
Breakdown voltage: 26.2...30.3V
Leakage current: 50nA
Anzahl je Verpackung: 1 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 30pF
Max. off-state voltage: 24V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 7A
Breakdown voltage: 26.2...30.3V
Leakage current: 50nA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
186+ | 0.39 EUR |
252+ | 0.28 EUR |
521+ | 0.14 EUR |
569+ | 0.13 EUR |
596+ | 0.12 EUR |
3000+ | 0.11 EUR |
PEC33712C2A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 35pF
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 35pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2025 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
360+ | 0.2 EUR |
545+ | 0.13 EUR |
605+ | 0.12 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
9000+ | 0.089 EUR |
PEC33712C2A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 35pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 35pF
auf Bestellung 2025 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
360+ | 0.2 EUR |
545+ | 0.13 EUR |
605+ | 0.12 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
PG4007-AU_R2_100A1 |
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward impulse current: 30A
Leakage current: 50µA
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward impulse current: 30A
Leakage current: 50µA
Semiconductor structure: single diode
Produkt ist nicht verfügbar
PG4007-AU_R2_100A1 |
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward impulse current: 30A
Leakage current: 50µA
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward impulse current: 30A
Leakage current: 50µA
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA138K-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1430+ | 0.05 EUR |
1740+ | 0.041 EUR |
2105+ | 0.034 EUR |
2225+ | 0.032 EUR |
PJA138K-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1430+ | 0.05 EUR |
1740+ | 0.041 EUR |
2105+ | 0.034 EUR |
2225+ | 0.032 EUR |
9000+ | 0.031 EUR |
PJA138K-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
PJA138K-AU-R2 SMD N channel transistors
PJA138K-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJA138K_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA138K-R1 SMD N channel transistors
PJA138K-R1 SMD N channel transistors
Produkt ist nicht verfügbar
PJA3400_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
585+ | 0.12 EUR |
650+ | 0.11 EUR |
785+ | 0.092 EUR |
820+ | 0.087 EUR |
9000+ | 0.084 EUR |
PJA3400_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
585+ | 0.12 EUR |
650+ | 0.11 EUR |
785+ | 0.092 EUR |
820+ | 0.087 EUR |
PJA3401A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 86mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -14.4A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 86mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -14.4A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
358+ | 0.2 EUR |
650+ | 0.11 EUR |
724+ | 0.099 EUR |
875+ | 0.082 EUR |
895+ | 0.08 EUR |
925+ | 0.077 EUR |
1000+ | 0.075 EUR |
PJA3401A_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 86mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -14.4A
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 86mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -14.4A
Case: SOT23
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
358+ | 0.2 EUR |
650+ | 0.11 EUR |
724+ | 0.099 EUR |
875+ | 0.082 EUR |
895+ | 0.08 EUR |
925+ | 0.077 EUR |
1000+ | 0.075 EUR |
PJA3402_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4419 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
705+ | 0.1 EUR |
845+ | 0.085 EUR |
935+ | 0.077 EUR |
1145+ | 0.062 EUR |
1215+ | 0.059 EUR |
9000+ | 0.057 EUR |
PJA3402_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
auf Bestellung 4419 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
705+ | 0.1 EUR |
845+ | 0.085 EUR |
935+ | 0.077 EUR |
1145+ | 0.062 EUR |
1215+ | 0.059 EUR |
PJA3403_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
910+ | 0.079 EUR |
1025+ | 0.07 EUR |
1095+ | 0.065 EUR |
1160+ | 0.062 EUR |
3000+ | 0.059 EUR |
PJA3403_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
910+ | 0.079 EUR |
1025+ | 0.07 EUR |
1095+ | 0.065 EUR |
1160+ | 0.062 EUR |
PJA3404_R1_00501 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5085 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
725+ | 0.099 EUR |
800+ | 0.09 EUR |
980+ | 0.073 EUR |
1040+ | 0.069 EUR |
3000+ | 0.066 EUR |
PJA3404_R1_00501 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5085 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
725+ | 0.099 EUR |
800+ | 0.09 EUR |
980+ | 0.073 EUR |
1040+ | 0.069 EUR |
3000+ | 0.066 EUR |
PJA3405-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
625+ | 0.11 EUR |
695+ | 0.1 EUR |
840+ | 0.086 EUR |
885+ | 0.081 EUR |
PJA3405-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2885 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
625+ | 0.11 EUR |
695+ | 0.1 EUR |
840+ | 0.086 EUR |
885+ | 0.081 EUR |
9000+ | 0.078 EUR |
PJA3406_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
256+ | 0.28 EUR |
650+ | 0.11 EUR |
949+ | 0.075 EUR |
1005+ | 0.071 EUR |
3000+ | 0.068 EUR |
PJA3406_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
256+ | 0.28 EUR |
650+ | 0.11 EUR |
949+ | 0.075 EUR |
1005+ | 0.071 EUR |
PJA3407_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
167+ | 0.43 EUR |
252+ | 0.28 EUR |
500+ | 0.14 EUR |
807+ | 0.089 EUR |
848+ | 0.084 EUR |
PJA3407_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
167+ | 0.43 EUR |
252+ | 0.28 EUR |
500+ | 0.14 EUR |
807+ | 0.089 EUR |
848+ | 0.084 EUR |
PJA3409_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2490 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
370+ | 0.19 EUR |
680+ | 0.11 EUR |
755+ | 0.095 EUR |
865+ | 0.083 EUR |
915+ | 0.078 EUR |
3000+ | 0.075 EUR |
PJA3409_R1_00001 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
370+ | 0.19 EUR |
680+ | 0.11 EUR |
755+ | 0.095 EUR |
865+ | 0.083 EUR |
915+ | 0.078 EUR |
PJA3411-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
295+ | 0.24 EUR |
439+ | 0.16 EUR |
618+ | 0.12 EUR |
1003+ | 0.071 EUR |
1062+ | 0.067 EUR |
PJA3411-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2785 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
295+ | 0.24 EUR |
439+ | 0.16 EUR |
618+ | 0.12 EUR |
1003+ | 0.071 EUR |
1062+ | 0.067 EUR |
9000+ | 0.065 EUR |
PJA3411_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA3411_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3412-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
auf Bestellung 2555 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
660+ | 0.11 EUR |
735+ | 0.098 EUR |
885+ | 0.081 EUR |
935+ | 0.077 EUR |
PJA3412-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2555 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
660+ | 0.11 EUR |
735+ | 0.098 EUR |
885+ | 0.081 EUR |
935+ | 0.077 EUR |
9000+ | 0.074 EUR |
PJA3412_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3412-R1 SMD N channel transistors
PJA3412-R1 SMD N channel transistors
Produkt ist nicht verfügbar
PJA3413_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
725+ | 0.099 EUR |
1025+ | 0.07 EUR |
1140+ | 0.063 EUR |
1375+ | 0.052 EUR |
1450+ | 0.049 EUR |
9000+ | 0.047 EUR |
PJA3413_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
725+ | 0.099 EUR |
1025+ | 0.07 EUR |
1140+ | 0.063 EUR |
1375+ | 0.052 EUR |
1450+ | 0.049 EUR |
PJA3415A-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
auf Bestellung 2870 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
485+ | 0.15 EUR |
535+ | 0.13 EUR |
645+ | 0.11 EUR |
685+ | 0.1 EUR |
PJA3415A-AU_R1_000A1 |
![]() |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2870 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
485+ | 0.15 EUR |
535+ | 0.13 EUR |
645+ | 0.11 EUR |
685+ | 0.1 EUR |
PJA3415AE_R1_00501 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA3415AE_R1_00501 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3416AE_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
605+ | 0.12 EUR |
680+ | 0.11 EUR |
810+ | 0.089 EUR |
865+ | 0.083 EUR |
9000+ | 0.08 EUR |
PJA3416AE_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
605+ | 0.12 EUR |
680+ | 0.11 EUR |
810+ | 0.089 EUR |
865+ | 0.083 EUR |
PJA3419AE_R1_00501 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA3419AE_R1_00501 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3419_R1_00001 |
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Hersteller: PanJit Semiconductor
PJA3419-R1 SMD P channel transistors
PJA3419-R1 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3428_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4890 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
1025+ | 0.07 EUR |
1135+ | 0.063 EUR |
1370+ | 0.052 EUR |
1450+ | 0.049 EUR |
9000+ | 0.047 EUR |
PJA3428_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
auf Bestellung 4890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
1025+ | 0.07 EUR |
1135+ | 0.063 EUR |
1370+ | 0.052 EUR |
1450+ | 0.049 EUR |
PJA3430_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2570 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
209+ | 0.34 EUR |
307+ | 0.23 EUR |
731+ | 0.098 EUR |
997+ | 0.072 EUR |
1055+ | 0.068 EUR |
3000+ | 0.065 EUR |
PJA3430_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
209+ | 0.34 EUR |
307+ | 0.23 EUR |
731+ | 0.098 EUR |
997+ | 0.072 EUR |
1055+ | 0.068 EUR |
PJA3432-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
209+ | 0.34 EUR |
285+ | 0.25 EUR |
703+ | 0.1 EUR |
866+ | 0.083 EUR |
916+ | 0.078 EUR |
PJA3432-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2165 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
209+ | 0.34 EUR |
285+ | 0.25 EUR |
703+ | 0.1 EUR |
866+ | 0.083 EUR |
916+ | 0.078 EUR |
3000+ | 0.075 EUR |
PJA3433-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
auf Bestellung 2355 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
358+ | 0.2 EUR |
589+ | 0.12 EUR |
667+ | 0.11 EUR |
782+ | 0.092 EUR |
834+ | 0.086 EUR |