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PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Produkt ist nicht verfügbar
PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Produkt ist nicht verfügbar
PEC3202M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC3202M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Produkt ist nicht verfügbar
PEC3205M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC3205M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Produkt ist nicht verfügbar
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU_R1_000A1 PanJit Semiconductor PEC3324C2A-AU Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 30pF
Max. off-state voltage: 24V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 7A
Breakdown voltage: 26.2...30.3V
Leakage current: 50nA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
252+ 0.28 EUR
521+ 0.14 EUR
569+ 0.13 EUR
596+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 186
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU_R1_000A1 PanJit Semiconductor PEC3324C2A-AU Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 30pF
Max. off-state voltage: 24V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 7A
Breakdown voltage: 26.2...30.3V
Leakage current: 50nA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
186+0.39 EUR
252+ 0.28 EUR
521+ 0.14 EUR
569+ 0.13 EUR
596+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 186
PEC33712C2A_R1_00001 PEC33712C2A_R1_00001 PanJit Semiconductor PEC33712C2A.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 35pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2025 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PEC33712C2A_R1_00001 PEC33712C2A_R1_00001 PanJit Semiconductor PEC33712C2A.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 35pF
auf Bestellung 2025 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PG4007-AU_R2_100A1 PG4007-AU_R2_100A1 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward impulse current: 30A
Leakage current: 50µA
Semiconductor structure: single diode
Produkt ist nicht verfügbar
PG4007-AU_R2_100A1 PG4007-AU_R2_100A1 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward impulse current: 30A
Leakage current: 50µA
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
1430+0.05 EUR
1740+ 0.041 EUR
2105+ 0.034 EUR
2225+ 0.032 EUR
Mindestbestellmenge: 1430
PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
1430+0.05 EUR
1740+ 0.041 EUR
2105+ 0.034 EUR
2225+ 0.032 EUR
9000+ 0.031 EUR
Mindestbestellmenge: 1430
PJA138K-AU_R2_000A1 PanJit Semiconductor PJA138K-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJA138K_R1_00001 PanJit Semiconductor PJA138K.pdf PJA138K-R1 SMD N channel transistors
Produkt ist nicht verfügbar
PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
785+ 0.092 EUR
820+ 0.087 EUR
9000+ 0.084 EUR
Mindestbestellmenge: 365
PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
785+ 0.092 EUR
820+ 0.087 EUR
Mindestbestellmenge: 365
PJA3401A_R1_00001 PJA3401A_R1_00001 PanJit Semiconductor PJA3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 86mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -14.4A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)
358+0.2 EUR
650+ 0.11 EUR
724+ 0.099 EUR
875+ 0.082 EUR
895+ 0.08 EUR
925+ 0.077 EUR
1000+ 0.075 EUR
Mindestbestellmenge: 358
PJA3401A_R1_00001 PJA3401A_R1_00001 PanJit Semiconductor PJA3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 86mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -14.4A
Case: SOT23
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
650+ 0.11 EUR
724+ 0.099 EUR
875+ 0.082 EUR
895+ 0.08 EUR
925+ 0.077 EUR
1000+ 0.075 EUR
Mindestbestellmenge: 358
PJA3402_R1_00001 PJA3402_R1_00001 PanJit Semiconductor PJA3402.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4419 Stücke:
Lieferzeit 7-14 Tag (e)
705+0.1 EUR
845+ 0.085 EUR
935+ 0.077 EUR
1145+ 0.062 EUR
1215+ 0.059 EUR
9000+ 0.057 EUR
Mindestbestellmenge: 705
PJA3402_R1_00001 PJA3402_R1_00001 PanJit Semiconductor PJA3402.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
auf Bestellung 4419 Stücke:
Lieferzeit 14-21 Tag (e)
705+0.1 EUR
845+ 0.085 EUR
935+ 0.077 EUR
1145+ 0.062 EUR
1215+ 0.059 EUR
Mindestbestellmenge: 705
PJA3403_R1_00001 PJA3403_R1_00001 PanJit Semiconductor PJA3403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)
715+0.1 EUR
910+ 0.079 EUR
1025+ 0.07 EUR
1095+ 0.065 EUR
1160+ 0.062 EUR
3000+ 0.059 EUR
Mindestbestellmenge: 715
PJA3403_R1_00001 PJA3403_R1_00001 PanJit Semiconductor PJA3403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
910+ 0.079 EUR
1025+ 0.07 EUR
1095+ 0.065 EUR
1160+ 0.062 EUR
Mindestbestellmenge: 715
PJA3404_R1_00501 PJA3404_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5085 Stücke:
Lieferzeit 7-14 Tag (e)
725+0.099 EUR
800+ 0.09 EUR
980+ 0.073 EUR
1040+ 0.069 EUR
3000+ 0.066 EUR
Mindestbestellmenge: 725
PJA3404_R1_00501 PJA3404_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5085 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.099 EUR
800+ 0.09 EUR
980+ 0.073 EUR
1040+ 0.069 EUR
3000+ 0.066 EUR
Mindestbestellmenge: 725
PJA3405-AU_R1_000A1 PJA3405-AU_R1_000A1 PanJit Semiconductor PJA3405-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
625+ 0.11 EUR
695+ 0.1 EUR
840+ 0.086 EUR
885+ 0.081 EUR
Mindestbestellmenge: 365
PJA3405-AU_R1_000A1 PJA3405-AU_R1_000A1 PanJit Semiconductor PJA3405-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2885 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
625+ 0.11 EUR
695+ 0.1 EUR
840+ 0.086 EUR
885+ 0.081 EUR
9000+ 0.078 EUR
Mindestbestellmenge: 365
PJA3406_R1_00001 PJA3406_R1_00001 PanJit Semiconductor PJA3406.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
256+ 0.28 EUR
650+ 0.11 EUR
949+ 0.075 EUR
1005+ 0.071 EUR
3000+ 0.068 EUR
Mindestbestellmenge: 173
PJA3406_R1_00001 PJA3406_R1_00001 PanJit Semiconductor PJA3406.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
256+ 0.28 EUR
650+ 0.11 EUR
949+ 0.075 EUR
1005+ 0.071 EUR
Mindestbestellmenge: 173
PJA3407_R1_00001 PJA3407_R1_00001 PanJit Semiconductor PJA3407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
252+ 0.28 EUR
500+ 0.14 EUR
807+ 0.089 EUR
848+ 0.084 EUR
Mindestbestellmenge: 167
PJA3407_R1_00001 PJA3407_R1_00001 PanJit Semiconductor PJA3407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
252+ 0.28 EUR
500+ 0.14 EUR
807+ 0.089 EUR
848+ 0.084 EUR
Mindestbestellmenge: 167
PJA3409_R1_00001 PJA3409_R1_00001 PanJit Semiconductor PJA3409.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2490 Stücke:
Lieferzeit 7-14 Tag (e)
370+0.19 EUR
680+ 0.11 EUR
755+ 0.095 EUR
865+ 0.083 EUR
915+ 0.078 EUR
3000+ 0.075 EUR
Mindestbestellmenge: 370
PJA3409_R1_00001 PJA3409_R1_00001 PanJit Semiconductor PJA3409.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
370+0.19 EUR
680+ 0.11 EUR
755+ 0.095 EUR
865+ 0.083 EUR
915+ 0.078 EUR
Mindestbestellmenge: 370
PJA3411-AU_R1_000A1 PJA3411-AU_R1_000A1 PanJit Semiconductor PJA3411-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
439+ 0.16 EUR
618+ 0.12 EUR
1003+ 0.071 EUR
1062+ 0.067 EUR
Mindestbestellmenge: 295
PJA3411-AU_R1_000A1 PJA3411-AU_R1_000A1 PanJit Semiconductor PJA3411-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2785 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.24 EUR
439+ 0.16 EUR
618+ 0.12 EUR
1003+ 0.071 EUR
1062+ 0.067 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 295
PJA3411_R1_00001 PJA3411_R1_00001 PanJit Semiconductor PJA3411.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA3411_R1_00001 PJA3411_R1_00001 PanJit Semiconductor PJA3411.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3412-AU_R1_000A1 PJA3412-AU_R1_000A1 PanJit Semiconductor PJA3412-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
auf Bestellung 2555 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
660+ 0.11 EUR
735+ 0.098 EUR
885+ 0.081 EUR
935+ 0.077 EUR
Mindestbestellmenge: 365
PJA3412-AU_R1_000A1 PJA3412-AU_R1_000A1 PanJit Semiconductor PJA3412-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2555 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
660+ 0.11 EUR
735+ 0.098 EUR
885+ 0.081 EUR
935+ 0.077 EUR
9000+ 0.074 EUR
Mindestbestellmenge: 365
PJA3412_R1_00001 PanJit Semiconductor PJA3412.pdf PJA3412-R1 SMD N channel transistors
Produkt ist nicht verfügbar
PJA3413_R1_00001 PJA3413_R1_00001 PanJit Semiconductor PJA3413.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)
725+0.099 EUR
1025+ 0.07 EUR
1140+ 0.063 EUR
1375+ 0.052 EUR
1450+ 0.049 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 725
PJA3413_R1_00001 PJA3413_R1_00001 PanJit Semiconductor PJA3413.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.099 EUR
1025+ 0.07 EUR
1140+ 0.063 EUR
1375+ 0.052 EUR
1450+ 0.049 EUR
Mindestbestellmenge: 725
PJA3415A-AU_R1_000A1 PJA3415A-AU_R1_000A1 PanJit Semiconductor PJA3415A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
auf Bestellung 2870 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
485+ 0.15 EUR
535+ 0.13 EUR
645+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 365
PJA3415A-AU_R1_000A1 PJA3415A-AU_R1_000A1 PanJit Semiconductor PJA3415A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2870 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
485+ 0.15 EUR
535+ 0.13 EUR
645+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 365
PJA3415AE_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA3415AE_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3416AE_R1_00001 PJA3416AE_R1_00001 PanJit Semiconductor PJA3416AE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
605+ 0.12 EUR
680+ 0.11 EUR
810+ 0.089 EUR
865+ 0.083 EUR
9000+ 0.08 EUR
Mindestbestellmenge: 365
PJA3416AE_R1_00001 PJA3416AE_R1_00001 PanJit Semiconductor PJA3416AE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
605+ 0.12 EUR
680+ 0.11 EUR
810+ 0.089 EUR
865+ 0.083 EUR
Mindestbestellmenge: 365
PJA3419AE_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA3419AE_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3419_R1_00001 PanJit Semiconductor PJA3419.pdf PJA3419-R1 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3428_R1_00001 PJA3428_R1_00001 PanJit Semiconductor PJA3428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4890 Stücke:
Lieferzeit 7-14 Tag (e)
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1370+ 0.052 EUR
1450+ 0.049 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 715
PJA3428_R1_00001 PJA3428_R1_00001 PanJit Semiconductor PJA3428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
auf Bestellung 4890 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1370+ 0.052 EUR
1450+ 0.049 EUR
Mindestbestellmenge: 715
PJA3430_R1_00001 PJA3430_R1_00001 PanJit Semiconductor PJA3430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2570 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
307+ 0.23 EUR
731+ 0.098 EUR
997+ 0.072 EUR
1055+ 0.068 EUR
3000+ 0.065 EUR
Mindestbestellmenge: 209
PJA3430_R1_00001 PJA3430_R1_00001 PanJit Semiconductor PJA3430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
307+ 0.23 EUR
731+ 0.098 EUR
997+ 0.072 EUR
1055+ 0.068 EUR
Mindestbestellmenge: 209
PJA3432-AU_R1_000A1 PJA3432-AU_R1_000A1 PanJit Semiconductor PJA3432-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
285+ 0.25 EUR
703+ 0.1 EUR
866+ 0.083 EUR
916+ 0.078 EUR
Mindestbestellmenge: 209
PJA3432-AU_R1_000A1 PJA3432-AU_R1_000A1 PanJit Semiconductor PJA3432-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2165 Stücke:
Lieferzeit 7-14 Tag (e)
209+0.34 EUR
285+ 0.25 EUR
703+ 0.1 EUR
866+ 0.083 EUR
916+ 0.078 EUR
3000+ 0.075 EUR
Mindestbestellmenge: 209
PJA3433-AU_R1_000A1 PJA3433-AU_R1_000A1 PanJit Semiconductor PJA3433-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
auf Bestellung 2355 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
589+ 0.12 EUR
667+ 0.11 EUR
782+ 0.092 EUR
834+ 0.086 EUR
Mindestbestellmenge: 358
PEC11SD03M1Q_R1_00501
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
Produkt ist nicht verfügbar
PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
Produkt ist nicht verfügbar
PEC3202M1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC3202M1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 2.5V
Semiconductor structure: bidirectional
Breakdown voltage: 2.6...4V
Leakage current: 0.5µA
Case: DFN1006-2
Produkt ist nicht verfügbar
PEC3205M1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PEC3205M1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Capacitance: 20pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Breakdown voltage: 5.5...8V
Leakage current: 0.5µA
Case: DFN1006-2
Produkt ist nicht verfügbar
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU
PEC3324C2A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 30pF
Max. off-state voltage: 24V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 7A
Breakdown voltage: 26.2...30.3V
Leakage current: 50nA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
252+ 0.28 EUR
521+ 0.14 EUR
569+ 0.13 EUR
596+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 186
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU
PEC3324C2A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 30pF
Max. off-state voltage: 24V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 7A
Breakdown voltage: 26.2...30.3V
Leakage current: 50nA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
252+ 0.28 EUR
521+ 0.14 EUR
569+ 0.13 EUR
596+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 186
PEC33712C2A_R1_00001 PEC33712C2A.pdf
PEC33712C2A_R1_00001
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 35pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2025 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PEC33712C2A_R1_00001 PEC33712C2A.pdf
PEC33712C2A_R1_00001
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 7...12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 35pF
auf Bestellung 2025 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PG4007-AU_R2_100A1
PG4007-AU_R2_100A1
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward impulse current: 30A
Leakage current: 50µA
Semiconductor structure: single diode
Produkt ist nicht verfügbar
PG4007-AU_R2_100A1
PG4007-AU_R2_100A1
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Case: DO41
Max. forward impulse current: 30A
Leakage current: 50µA
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1430+0.05 EUR
1740+ 0.041 EUR
2105+ 0.034 EUR
2225+ 0.032 EUR
Mindestbestellmenge: 1430
PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Pulsed drain current: 1.2A
Type of transistor: N-MOSFET
Drain current: 0.5A
Drain-source voltage: 50V
Power dissipation: 0.5W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1430+0.05 EUR
1740+ 0.041 EUR
2105+ 0.034 EUR
2225+ 0.032 EUR
9000+ 0.031 EUR
Mindestbestellmenge: 1430
PJA138K-AU_R2_000A1
Hersteller: PanJit Semiconductor
PJA138K-AU-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJA138K_R1_00001 PJA138K.pdf
Hersteller: PanJit Semiconductor
PJA138K-R1 SMD N channel transistors
Produkt ist nicht verfügbar
PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
785+ 0.092 EUR
820+ 0.087 EUR
9000+ 0.084 EUR
Mindestbestellmenge: 365
PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 5.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Type of transistor: N-MOSFET
Drain current: 4.9A
Drain-source voltage: 30V
Power dissipation: 1.25W
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
785+ 0.092 EUR
820+ 0.087 EUR
Mindestbestellmenge: 365
PJA3401A_R1_00001 PJA3401A.pdf
PJA3401A_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 86mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -14.4A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
650+ 0.11 EUR
724+ 0.099 EUR
875+ 0.082 EUR
895+ 0.08 EUR
925+ 0.077 EUR
1000+ 0.075 EUR
Mindestbestellmenge: 358
PJA3401A_R1_00001 PJA3401A.pdf
PJA3401A_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 86mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -14.4A
Case: SOT23
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
650+ 0.11 EUR
724+ 0.099 EUR
875+ 0.082 EUR
895+ 0.08 EUR
925+ 0.077 EUR
1000+ 0.075 EUR
Mindestbestellmenge: 358
PJA3402_R1_00001 PJA3402.pdf
PJA3402_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4419 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
705+0.1 EUR
845+ 0.085 EUR
935+ 0.077 EUR
1145+ 0.062 EUR
1215+ 0.059 EUR
9000+ 0.057 EUR
Mindestbestellmenge: 705
PJA3402_R1_00001 PJA3402.pdf
PJA3402_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 92mΩ
Pulsed drain current: 17.6A
Type of transistor: N-MOSFET
Drain current: 4.4A
Drain-source voltage: 30V
Power dissipation: 1.25W
auf Bestellung 4419 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
705+0.1 EUR
845+ 0.085 EUR
935+ 0.077 EUR
1145+ 0.062 EUR
1215+ 0.059 EUR
Mindestbestellmenge: 705
PJA3403_R1_00001 PJA3403.pdf
PJA3403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
910+ 0.079 EUR
1025+ 0.07 EUR
1095+ 0.065 EUR
1160+ 0.062 EUR
3000+ 0.059 EUR
Mindestbestellmenge: 715
PJA3403_R1_00001 PJA3403.pdf
PJA3403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Pulsed drain current: -12.4A
Type of transistor: P-MOSFET
Drain current: -3.1A
Drain-source voltage: -30V
Power dissipation: 1.25W
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
910+ 0.079 EUR
1025+ 0.07 EUR
1095+ 0.065 EUR
1160+ 0.062 EUR
Mindestbestellmenge: 715
PJA3404_R1_00501
PJA3404_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5085 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
800+ 0.09 EUR
980+ 0.073 EUR
1040+ 0.069 EUR
3000+ 0.066 EUR
Mindestbestellmenge: 725
PJA3404_R1_00501
PJA3404_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5085 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
800+ 0.09 EUR
980+ 0.073 EUR
1040+ 0.069 EUR
3000+ 0.066 EUR
Mindestbestellmenge: 725
PJA3405-AU_R1_000A1 PJA3405-AU.pdf
PJA3405-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
625+ 0.11 EUR
695+ 0.1 EUR
840+ 0.086 EUR
885+ 0.081 EUR
Mindestbestellmenge: 365
PJA3405-AU_R1_000A1 PJA3405-AU.pdf
PJA3405-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Pulsed drain current: -14.4A
Type of transistor: P-MOSFET
Drain current: -3.6A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2885 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
625+ 0.11 EUR
695+ 0.1 EUR
840+ 0.086 EUR
885+ 0.081 EUR
9000+ 0.078 EUR
Mindestbestellmenge: 365
PJA3406_R1_00001 PJA3406.pdf
PJA3406_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
256+ 0.28 EUR
650+ 0.11 EUR
949+ 0.075 EUR
1005+ 0.071 EUR
3000+ 0.068 EUR
Mindestbestellmenge: 173
PJA3406_R1_00001 PJA3406.pdf
PJA3406_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
On-state resistance: 70mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
256+ 0.28 EUR
650+ 0.11 EUR
949+ 0.075 EUR
1005+ 0.071 EUR
Mindestbestellmenge: 173
PJA3407_R1_00001 PJA3407.pdf
PJA3407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
252+ 0.28 EUR
500+ 0.14 EUR
807+ 0.089 EUR
848+ 0.084 EUR
Mindestbestellmenge: 167
PJA3407_R1_00001 PJA3407.pdf
PJA3407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
252+ 0.28 EUR
500+ 0.14 EUR
807+ 0.089 EUR
848+ 0.084 EUR
Mindestbestellmenge: 167
PJA3409_R1_00001 PJA3409.pdf
PJA3409_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2490 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
680+ 0.11 EUR
755+ 0.095 EUR
865+ 0.083 EUR
915+ 0.078 EUR
3000+ 0.075 EUR
Mindestbestellmenge: 370
PJA3409_R1_00001 PJA3409.pdf
PJA3409_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: -11.6A
Type of transistor: P-MOSFET
Drain current: -2.9A
Drain-source voltage: -30V
Power dissipation: 1.25W
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
680+ 0.11 EUR
755+ 0.095 EUR
865+ 0.083 EUR
915+ 0.078 EUR
Mindestbestellmenge: 370
PJA3411-AU_R1_000A1 PJA3411-AU.pdf
PJA3411-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
439+ 0.16 EUR
618+ 0.12 EUR
1003+ 0.071 EUR
1062+ 0.067 EUR
Mindestbestellmenge: 295
PJA3411-AU_R1_000A1 PJA3411-AU.pdf
PJA3411-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2785 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
439+ 0.16 EUR
618+ 0.12 EUR
1003+ 0.071 EUR
1062+ 0.067 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 295
PJA3411_R1_00001 PJA3411.pdf
PJA3411_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA3411_R1_00001 PJA3411.pdf
PJA3411_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3412-AU_R1_000A1 PJA3412-AU.pdf
PJA3412-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
auf Bestellung 2555 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
660+ 0.11 EUR
735+ 0.098 EUR
885+ 0.081 EUR
935+ 0.077 EUR
Mindestbestellmenge: 365
PJA3412-AU_R1_000A1 PJA3412-AU.pdf
PJA3412-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Pulsed drain current: 16.4A
Type of transistor: N-MOSFET
Drain current: 4.1A
Drain-source voltage: 20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2555 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
660+ 0.11 EUR
735+ 0.098 EUR
885+ 0.081 EUR
935+ 0.077 EUR
9000+ 0.074 EUR
Mindestbestellmenge: 365
PJA3412_R1_00001 PJA3412.pdf
Hersteller: PanJit Semiconductor
PJA3412-R1 SMD N channel transistors
Produkt ist nicht verfügbar
PJA3413_R1_00001 PJA3413.pdf
PJA3413_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
1025+ 0.07 EUR
1140+ 0.063 EUR
1375+ 0.052 EUR
1450+ 0.049 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 725
PJA3413_R1_00001 PJA3413.pdf
PJA3413_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Pulsed drain current: -13.6A
Type of transistor: P-MOSFET
Drain current: -3.4A
Drain-source voltage: -20V
Power dissipation: 1.25W
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
725+0.099 EUR
1025+ 0.07 EUR
1140+ 0.063 EUR
1375+ 0.052 EUR
1450+ 0.049 EUR
Mindestbestellmenge: 725
PJA3415A-AU_R1_000A1 PJA3415A-AU.pdf
PJA3415A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
auf Bestellung 2870 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
485+ 0.15 EUR
535+ 0.13 EUR
645+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 365
PJA3415A-AU_R1_000A1 PJA3415A-AU.pdf
PJA3415A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Pulsed drain current: -18A
Type of transistor: P-MOSFET
Drain current: -4.5A
Drain-source voltage: -20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2870 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
485+ 0.15 EUR
535+ 0.13 EUR
645+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 365
PJA3415AE_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA3415AE_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3416AE_R1_00001 PJA3416AE.pdf
PJA3416AE_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
605+ 0.12 EUR
680+ 0.11 EUR
810+ 0.089 EUR
865+ 0.083 EUR
9000+ 0.08 EUR
Mindestbestellmenge: 365
PJA3416AE_R1_00001 PJA3416AE.pdf
PJA3416AE_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 8.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Pulsed drain current: 32A
Type of transistor: N-MOSFET
Drain current: 6.5A
Drain-source voltage: 20V
Power dissipation: 1.25W
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
365+0.2 EUR
605+ 0.12 EUR
680+ 0.11 EUR
810+ 0.089 EUR
865+ 0.083 EUR
Mindestbestellmenge: 365
PJA3419AE_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJA3419AE_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJA3419_R1_00001 PJA3419.pdf
Hersteller: PanJit Semiconductor
PJA3419-R1 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3428_R1_00001 PJA3428.pdf
PJA3428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4890 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1370+ 0.052 EUR
1450+ 0.049 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 715
PJA3428_R1_00001 PJA3428.pdf
PJA3428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±10V
On-state resistance: 4Ω
Pulsed drain current: 0.6A
Type of transistor: N-MOSFET
Drain current: 0.3A
Drain-source voltage: 30V
Power dissipation: 0.5W
auf Bestellung 4890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1370+ 0.052 EUR
1450+ 0.049 EUR
Mindestbestellmenge: 715
PJA3430_R1_00001 PJA3430.pdf
PJA3430_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2570 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
307+ 0.23 EUR
731+ 0.098 EUR
997+ 0.072 EUR
1055+ 0.068 EUR
3000+ 0.065 EUR
Mindestbestellmenge: 209
PJA3430_R1_00001 PJA3430.pdf
PJA3430_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
307+ 0.23 EUR
731+ 0.098 EUR
997+ 0.072 EUR
1055+ 0.068 EUR
Mindestbestellmenge: 209
PJA3432-AU_R1_000A1 PJA3432-AU.pdf
PJA3432-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
285+ 0.25 EUR
703+ 0.1 EUR
866+ 0.083 EUR
916+ 0.078 EUR
Mindestbestellmenge: 209
PJA3432-AU_R1_000A1 PJA3432-AU.pdf
PJA3432-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2165 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
285+ 0.25 EUR
703+ 0.1 EUR
866+ 0.083 EUR
916+ 0.078 EUR
3000+ 0.075 EUR
Mindestbestellmenge: 209
PJA3433-AU_R1_000A1 PJA3433-AU.pdf
PJA3433-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
auf Bestellung 2355 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
589+ 0.12 EUR
667+ 0.11 EUR
782+ 0.092 EUR
834+ 0.086 EUR
Mindestbestellmenge: 358
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