Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1508) > Seite 18 nach 26
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PJMBZ6V2A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ6V2A-AU-R1 Transil diodes - arrays |
Produkt ist nicht verfügbar |
||
| PJMBZ6V8A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ6V8A-AU-R1 Transil diodes - arrays |
Produkt ist nicht verfügbar |
||
| PJMBZ9V1A-AU_R1_007A1 | PanJit Semiconductor |
 Category: Transil diodes - arraysDescription: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23 Mounting: SMD Max. off-state voltage: 6V Semiconductor structure: common anode; double Breakdown voltage: 8.65...9.56V Leakage current: 0.3µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 24W Case: SOT23 |
Produkt ist nicht verfügbar |
||
| PJMBZ9V1A-AU_R1_007A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23 Mounting: SMD Max. off-state voltage: 6V Semiconductor structure: common anode; double Breakdown voltage: 8.65...9.56V Leakage current: 0.3µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 24W Case: SOT23 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| PJMD280N60E1_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| PJMD280N60E1_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||
 |
PJMD360N60EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMD360N60EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
PJMD390N65EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMD390N65EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A |
Produkt ist nicht verfügbar |
|
|
|
PJMD580N60E1_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 54W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMD580N60E1_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 54W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
PJMD600N65E1_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Power dissipation: 54W On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21.9A Drain-source voltage: 650V Drain current: 7.3A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMD600N65E1_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Power dissipation: 54W On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21.9A Drain-source voltage: 650V Drain current: 7.3A |
Produkt ist nicht verfügbar |
|
|
|
PJMD900N60EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 9.7A Power dissipation: 47.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMD900N60EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 9.7A Power dissipation: 47.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
| PJMD990N65EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 9.5A Mounting: SMD Case: TO252AA Drain-source voltage: 650V Drain current: 4.7A On-state resistance: 990mΩ Type of transistor: N-MOSFET Power dissipation: 47.5W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| PJMD990N65EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 9.5A Mounting: SMD Case: TO252AA Drain-source voltage: 650V Drain current: 4.7A On-state resistance: 990mΩ Type of transistor: N-MOSFET Power dissipation: 47.5W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||
| PJMF099N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Case: ITO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| PJMF099N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Case: ITO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||
 |
PJMF120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Kind of package: tube Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 69A Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMF120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Kind of package: tube Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 69A Mounting: THT |
Produkt ist nicht verfügbar |
|
| PJMF130N65EC_T0_006A1 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Case: ITO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| PJMF130N65EC_T0_006A1 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Case: ITO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||
|
|
PJMF190N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 38W Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMF190N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 38W Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
PJMF210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 32W Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMF210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 32W Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
PJMF280N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 34W Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMF280N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 34W Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
PJMF280N65E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 35.7W Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMF280N65E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 35.7W Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
PJMF360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMF360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
PJMF390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 29.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMF390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 29.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A |
Produkt ist nicht verfügbar |
|
|
|
PJMF580N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMF580N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 28W Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
| PJMF600N65E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Pulsed drain current: 21.9A Power dissipation: 32W Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| PJMF600N65E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Pulsed drain current: 21.9A Power dissipation: 32W Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||
|
|
PJMF990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMF990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
| PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||
 |
PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Pulsed drain current: 117A Power dissipation: 446W Gate-source voltage: ±30V On-state resistance: 74mΩ Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
PJMH120N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 235W Polarisation: unipolar Kind of package: tube Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 69A Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMH120N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 235W Polarisation: unipolar Kind of package: tube Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 69A Mounting: THT |
Produkt ist nicht verfügbar |
|
|
|
PJMH190N60E1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Pulsed drain current: 62A Power dissipation: 160W Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMH190N60E1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Pulsed drain current: 62A Power dissipation: 160W Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
 |
PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 235W Polarisation: unipolar Kind of package: tube Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 69A Mounting: THT Case: TO220ABL Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 235W Polarisation: unipolar Kind of package: tube Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 69A Mounting: THT Case: TO220ABL |
Produkt ist nicht verfügbar |
|
|
|
PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
PJMP360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMP360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|
|
|
PJMP390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL Case: TO220ABL Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMP390N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL Case: TO220ABL Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A |
Produkt ist nicht verfügbar |
|
|
|
PJMP900N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 9.7A Power dissipation: 47.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 8.8nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
PJMP900N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 9.7A Power dissipation: 47.5W Case: TO220ABL Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 8.8nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| PJMBZ6V2A-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
PJMBZ6V2A-AU-R1 Transil diodes - arrays
PJMBZ6V2A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
| PJMBZ6V8A-AU_R1_007A1 |
Hersteller: PanJit Semiconductor
PJMBZ6V8A-AU-R1 Transil diodes - arrays
PJMBZ6V8A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
| PJMBZ9V1A-AU_R1_007A1 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 24W
Case: SOT23
Category: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 24W
Case: SOT23
Produkt ist nicht verfügbar
| PJMBZ9V1A-AU_R1_007A1 |
|
Hersteller: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 24W
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 24W
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMD280N60E1_L2_00601 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMD280N60E1_L2_00601 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMD360N60EC_L2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMD360N60EC_L2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMD390N65EC_L2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMD390N65EC_L2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
| PJMD580N60E1_L2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMD580N60E1_L2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMD600N65E1_L2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 54W
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
Drain current: 7.3A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 54W
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
Drain current: 7.3A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| PJMD600N65E1_L2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 54W
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
Drain current: 7.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 54W
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
Drain current: 7.3A
Produkt ist nicht verfügbar
| PJMD900N60EC_L2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMD900N60EC_L2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMD990N65EC_L2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.5A
Mounting: SMD
Case: TO252AA
Drain-source voltage: 650V
Drain current: 4.7A
On-state resistance: 990mΩ
Type of transistor: N-MOSFET
Power dissipation: 47.5W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.5A
Mounting: SMD
Case: TO252AA
Drain-source voltage: 650V
Drain current: 4.7A
On-state resistance: 990mΩ
Type of transistor: N-MOSFET
Power dissipation: 47.5W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMD990N65EC_L2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.5A
Mounting: SMD
Case: TO252AA
Drain-source voltage: 650V
Drain current: 4.7A
On-state resistance: 990mΩ
Type of transistor: N-MOSFET
Power dissipation: 47.5W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.5A
Mounting: SMD
Case: TO252AA
Drain-source voltage: 650V
Drain current: 4.7A
On-state resistance: 990mΩ
Type of transistor: N-MOSFET
Power dissipation: 47.5W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
| PJMF099N60EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF099N60EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMF120N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF120N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Produkt ist nicht verfügbar
| PJMF130N65EC_T0_006A1 |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF130N65EC_T0_006A1 |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMF190N60E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF190N60E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMF210N65EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF210N65EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMF280N60E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF280N60E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMF280N65E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF280N65E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMF360N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF360N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMF390N65EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 29.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 29.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF390N65EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 29.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 29.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
| PJMF580N60E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF580N60E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMF600N65E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Pulsed drain current: 21.9A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Pulsed drain current: 21.9A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF600N65E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Pulsed drain current: 21.9A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Pulsed drain current: 21.9A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMF990N65EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMF990N65EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMH040N60EC_T0_00201 |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMH040N60EC_T0_00201 |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMH074N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMH074N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMH120N60EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMH120N60EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Produkt ist nicht verfügbar
| PJMH190N60E1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 160W
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 160W
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMH190N60E1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 160W
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 160W
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMP120N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Case: TO220ABL
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Case: TO220ABL
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMP120N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Case: TO220ABL
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 235W
Polarisation: unipolar
Kind of package: tube
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 69A
Mounting: THT
Case: TO220ABL
Produkt ist nicht verfügbar
| PJMP210N65EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMP210N65EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMP360N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMP360N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PJMP390N65EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Case: TO220ABL
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Case: TO220ABL
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMP390N65EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Case: TO220ABL
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Case: TO220ABL
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
| PJMP900N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PJMP900N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar