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PJMD600N65E1_L2_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 54W
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
Drain current: 7.3A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 54W
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
Drain current: 7.3A
Anzahl je Verpackung: 3000 Stücke
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Technische Details PJMD600N65E1_L2_00001 PanJit Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA, Case: TO252AA, Mounting: SMD, Kind of package: reel; tape, Power dissipation: 54W, On-state resistance: 0.6Ω, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 17nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 21.9A, Drain-source voltage: 650V, Drain current: 7.3A, Anzahl je Verpackung: 3000 Stücke.
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PJMD600N65E1_L2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Power dissipation: 54W On-state resistance: 0.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21.9A Drain-source voltage: 650V Drain current: 7.3A |
Produkt ist nicht verfügbar |