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PJMP120N60EC_T0_00001 Panjit International Inc.
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Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
auf Bestellung 1969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.59 EUR |
10+ | 3.02 EUR |
100+ | 2.44 EUR |
500+ | 2.39 EUR |
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Technische Details PJMP120N60EC_T0_00001 Panjit International Inc.
Description: 600V SUPER JUNCTION MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V, Power Dissipation (Max): 235W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V.
Weitere Produktangebote PJMP120N60EC_T0_00001 nach Preis ab 5.81 EUR bis 6.69 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PJMP120N60EC_T0_00001 | Hersteller : Panjit |
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auf Bestellung 860 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP120N60EC_T0_00001 | Hersteller : PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 235W Polarisation: unipolar Kind of package: tube Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 69A Mounting: THT Case: TO220ABL Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJMP120N60EC_T0_00001 | Hersteller : PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 235W Polarisation: unipolar Kind of package: tube Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 69A Mounting: THT Case: TO220ABL |
Produkt ist nicht verfügbar |