![PJMD390N65EC_L2_00001 PJMD390N65EC_L2_00001](https://www.mouser.com/images/panjit/lrg/TO-252AA_SPL.jpg)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.68 EUR |
10+ | 3.92 EUR |
25+ | 3.71 EUR |
100+ | 3.19 EUR |
250+ | 3.01 EUR |
500+ | 2.83 EUR |
1000+ | 2.43 EUR |
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Technische Details PJMD390N65EC_L2_00001 Panjit
Description: 650V SUPER JUNCITON MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V, Power Dissipation (Max): 87.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V.
Weitere Produktangebote PJMD390N65EC_L2_00001 nach Preis ab 6.84 EUR bis 12.48 EUR
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PJMD390N65EC_L2_00001 | Hersteller : Panjit International Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD390N65EC_L2_00001 | Hersteller : Panjit International Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD390N65EC_L2_00001 | Hersteller : PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJMD390N65EC_L2_00001 | Hersteller : PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A |
Produkt ist nicht verfügbar |