PJA3411_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.096 EUR |
| 6000+ | 0.092 EUR |
| 9000+ | 0.088 EUR |
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Technische Details PJA3411_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V.
Weitere Produktangebote PJA3411_R1_00001 nach Preis ab 0.092 EUR bis 0.77 EUR
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PJA3411_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V |
auf Bestellung 29966 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3411_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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PJA3411_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |