PJA3416AE_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 10 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJA3416AE_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 10 V.
Weitere Produktangebote PJA3416AE_R1_00001 nach Preis ab 0.08 EUR bis 0.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PJA3416AE_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 8.6nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 34mΩ Pulsed drain current: 32A Type of transistor: N-MOSFET Drain current: 6.5A Drain-source voltage: 20V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2925 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
|
PJA3416AE_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 8.6nC Kind of channel: enhanced Gate-source voltage: ±8V On-state resistance: 34mΩ Pulsed drain current: 32A Type of transistor: N-MOSFET Drain current: 6.5A Drain-source voltage: 20V Power dissipation: 1.25W |
auf Bestellung 2925 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
PJA3416AE_R1_00001 | Hersteller : Panjit |
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 8210 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
PJA3416AE_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 10 V |
auf Bestellung 29429 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| PJA3416AE-R1-00001 | Hersteller : Panjit | MOSFET SOT-23/MOS/SOT/NFET-20TMN |
Produkt ist nicht verfügbar |