PCDH30120CCGB_T0_00601 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 332W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 92A
Power dissipation: 332W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.9V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 332W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 92A
Power dissipation: 332W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.9V
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
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Technische Details PCDH30120CCGB_T0_00601 PanJit Semiconductor
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 332W; TO247-3, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 15A x2, Max. load current: 92A, Power dissipation: 332W, Semiconductor structure: common cathode; double, Case: TO247-3, Kind of package: tube, Max. forward impulse current: 1.2kA, Max. forward voltage: 1.9V, Leakage current: 0.1mA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PCDH30120CCGB_T0_00601
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PCDH30120CCGB_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 332W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Max. load current: 92A Power dissipation: 332W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 1.2kA Max. forward voltage: 1.9V Leakage current: 0.1mA |
Produkt ist nicht verfügbar |