PCDP0465G1_T0_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: DIODE SIL CARB 650V 4A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 146pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 4.17 EUR |
| 10+ | 3.46 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.33 EUR |
| 1000+ | 1.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDP0465G1_T0_00001 Panjit International Inc.
Description: DIODE SIL CARB 650V 4A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 146pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote PCDP0465G1_T0_00001 nach Preis ab 2.36 EUR bis 5.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PCDP0465G1_T0_00001 | Hersteller : Panjit |
Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode |
auf Bestellung 1410 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
PCDP0465G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 56W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
PCDP0465G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 56W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA |
Produkt ist nicht verfügbar |