PCDH4065CCGC_T0_00601 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 166W
Mounting: THT
Power dissipation: 166W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.8V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 729A
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 166W
Mounting: THT
Power dissipation: 166W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.8V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 729A
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
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Technische Details PCDH4065CCGC_T0_00601 PanJit Semiconductor
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 166W, Mounting: THT, Power dissipation: 166W, Kind of package: tube, Type of diode: Schottky rectifying, Technology: SiC, Case: TO247-3, Max. off-state voltage: 650V, Max. load current: 60A, Max. forward voltage: 1.8V, Load current: 20A x2, Semiconductor structure: common cathode; double, Max. forward impulse current: 729A, Leakage current: 0.1mA, Anzahl je Verpackung: 1 Stücke.
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PCDH4065CCGC_T0_00601 | Hersteller : Panjit | SiC Schottky Diodes 650V SiC Schottky Barrier Diode |
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PCDH4065CCGC_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 166W Mounting: THT Power dissipation: 166W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Max. off-state voltage: 650V Max. load current: 60A Max. forward voltage: 1.8V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 729A Leakage current: 0.1mA |
Produkt ist nicht verfügbar |