PJA3463_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
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Technische Details PJA3463_R1_00001 Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V.
Weitere Produktangebote PJA3463_R1_00001 nach Preis ab 0.12 EUR bis 0.65 EUR
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PJA3463_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; Idm: -10A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.13Ω Pulsed drain current: -10A Type of transistor: P-MOSFET Drain current: -2.5A Drain-source voltage: -60V Power dissipation: 1.25W Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2700 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3463_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; Idm: -10A; 1.25W; SOT23 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT23 Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.13Ω Pulsed drain current: -10A Type of transistor: P-MOSFET Drain current: -2.5A Drain-source voltage: -60V Power dissipation: 1.25W |
auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3463_R1_00001 | Hersteller : Panjit |
MOSFET 60V P-Channel Enhancement Mode MOSFET |
auf Bestellung 28127 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3463_R1_00001 | Hersteller : Panjit International Inc. |
Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V |
auf Bestellung 17972 Stücke: Lieferzeit 10-14 Tag (e) |
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