PJD15P06A-AU_L2_000A1 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.36 EUR |
| 9000+ | 0.33 EUR |
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Technische Details PJD15P06A-AU_L2_000A1 Panjit International Inc.
Description: 60V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V, Power Dissipation (Max): 2W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V.
Weitere Produktangebote PJD15P06A-AU_L2_000A1 nach Preis ab 0.35 EUR bis 1 EUR
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PJD15P06A-AU_L2_000A1 | Hersteller : Panjit |
MOSFET 60V P-Channel Enhancement Mode MOSFET |
auf Bestellung 4302 Stücke: Lieferzeit 10-14 Tag (e) |
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PJD15P06A-AU_L2_000A1 | Hersteller : Panjit International Inc. |
Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V |
auf Bestellung 30526 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJD15P06A-AU_L2_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15A Pulsed drain current: -60A Power dissipation: 25W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PJD15P06A-AU_L2_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15A Pulsed drain current: -60A Power dissipation: 25W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |